49 research outputs found

    Flexible IGZO TFTs and their suitability for space applications

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    In this paper, low earth orbit radiation (LEO), temperature, and magnetic field conditions are mimicked to investigate the suitability of flexible InGaZnO transistors for lightweight space wearables. More specifically, the impacts of high energetic electron irradiation with fluences up to 10 12 e - /cm 2 , low operating temperatures down to 78 K and magnetic fields up to 11 mT are investigated. This simulates 278 h in LEO. The threshold voltage and mobility of transistors that were exposed to e - irradiation are found to shift by +(0.09 ± 0.05) V and -(0.6 ± 0.5) cm 2 V -1 s -1 . Subsequent low temperature exposure resulted in additional shifts of +0.38 V and -5.95 cm 2 V -1 s -1 for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. Conversely, the performance of the devices was observed not to be significantly affected by the magnetic fields. Finally, a Cascode amplifier presenting a voltage gain of 10.3 dB and a cutoff frequency of 1.2 kHz is demonstrated after the sample had been irradiated, cooled down, and exposed to the magnetic fields. If these notions are considered during the systems design, these devices can be used to unobtrusively integrate sensor systems into space suits

    Laser-Induced, Green and Biocompatible Paper-Based Devices for Circular Electronics

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    The growing usage and consumption of electronics-integrated items into the daily routine has raised concerns on the disposal and proper recycling of these components. Here, a fully sustainable and green technology for the fabrication of different electronics on fruit-waste derived paper substrate, is reported. The process relies on the carbonization of the topmost surface of different cellulose-based substrates, derived from apple-, kiwi-, and grape-based processes, by a CO2 laser. By optimizing the lasing parameters, electronic devices, such as capacitors, biosensors, and electrodes for food monitoring as well as heart and respiration activity analysis, are realized. Biocompatibility tests on fruit-based cellulose reveal no shortcoming for on-skin applications. The employment of such natural and plastic-free substrate allows twofold strategies for electronics recycling. As a first approach, device dissolution is achieved at room temperature within 40 days, revealing transient behavior in natural solution and leaving no harmful residuals. Alternatively, the cellulose-based electronics is reintroduced in nature, as possible support for plant seeding and growth or even soil amendment. These results demonstrate the realization of green, low-cost and circular electronics, with possible applications in smart agriculture and the Internet-of-Thing, with no waste creation and zero or even positive impact on the ecosystem

    Unobtrusive Thin-Film Devices and Sustainable Green Electronics

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    Over the last years, the research on unconventional electronics has paved the way to the realization of devices and systems with bespoke properties, including mechanical flexibility, optical transparency, and environmental sustainability. In this paper, alternative materials and novel fabrication methods to achieve highly-Transparent thin-film electronics and green, circular and sustainable devices are summarized. Firstly, the use of optically-Transparent materials, such as Indium-Tin-Oxide (ITO) and In-Ga-Zn-O (IGZO), has allowed the realization of imperceptible Thin-Film Transistors (TFTs), as well as ring oscillators, on flexible and stretchable substrates, for unobtrusive, flexible and low-power systems. Secondly, conductive traces are fabricated on recycled paper, acting as a green substrate, by using a CO2 laser for on-skin applications. Moreover, the employment of natural and recyclable materials allows device decomposition in natural solutions (i.e. lemon juice), as well as the use of our paper-based electronic as natural support for plant growth and seed germination in soil

    Influence of Semiconductor Island Geometry on the AC Performance of Flexible InGaZnO TFTs

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    The AC performance of flexible TFTs sufferers from parasitics caused by tolerances needed for the fabrication on free-standing plastic foils. In this context, the semiconductor island can either be wider or narrower than the source/drain contacts. Traditionally, the second configuration is expected to result in faster TFTs as the total gate overlap area is smaller. However, here it is shown that 2.5μ m long flexible InGaZnO TFTs with wide semiconductor islands exhibit better frequency performance such as a fT of 26.1 M Hz (compared to fT of 13.8 M Hz of TFTs with narrow semiconductor islands). This effect is confirmed for flat and bend TFTs and is caused by current spreading in the semiconductor islands, as well as the frequency dependency of the gate capacitance
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