Ultra violet sensors based on nanostructured ZnO spheres in network of nanowires: a novel approach

The ZnO nanostructures consisting of micro spheres in a network of nano wires were synthesized by direct vapor phase method. X-ray Photoelectron Spectroscopy measurements were carried out to understand the chemical nature of the sample. ZnO nanostructures exhibited band edge luminescence at 383 nm. The nanostructure based ZnO thin films were used to fabricate UV sensors. The photoresponse measurements were carried out and the responsivity was measured to be 50 mA W−1. The rise and decay time measurements were also measured

Low Temperature Growth of In2O3and InN Nanocrystals on Si(111) via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

Indium oxide (In2O3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl) which is incorporated into the In under a gas flow of nitrogen (N2). Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forTG < 900 °C. The incorporation of NH4Cl in the In leads to the sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111) where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111). The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111) with an average diameter of 300 nm

Detection of surface states in GaAs and InP by thermally stimulated exoelectron emission spectroscopy

The energy distribution and relative densities of electronically active surface defects have been studied using thermally stimulated exoelectron emission (TSEE) spectroscopy. This novel and relatively simple technique has high sensitivity for detecting the surface states which are difficult to assess by other techniques. Here this technique is successfully used for detecting the pinned positions of the Fermi level in n-GaAs and n-InP which are, respectively, 0.91 and 0.43 eV below the conduction bands corresponding to 2Eg/3 and Eg/3 as expected. Antisite and oxygen related defects in these semiconductors are also identified at the surface. The relative TSEE peak intensities correlate very closely to the reported surface recombination velocities for these materials which are two to three orders of magnitude higher for GaAs. The effect of chromium on the surface states in these semiconductors, studied using semi-insulating GaAs, showed partial passivation of the surface defects in semi-insulating GaAs resulting in unpinning of the Fermi levels. Fe doped InP did not, however, show any sign of dopant induced deep levels