Genetic study in patients operated dentally and anesthetized with articaine-epinephrine

Aims: In this study we wanted to figure out if there was a correlation between OPRM1 N40D, TRPV1 I316M, TRPV1 I585V, NOS3 −786T>C and IL6 −174C>G polymorphisms and the response to locally applied articaine-epinephrine anesthetic. Methods: In this observational study, 114 oral cell samples of patients anesthetized with articaine-epinephrine (54 from men 60 from women), were collected from dental centers in Madrid (Spain). High molecular weight DNA was obtained from oral mucosa cells. The analysis of OPRM1 N40D (rs1799971), TRPV1 I316M (rs222747), TRPV1 I585V (rs8065080) and IL6 −174C>G polymorphism was performed through real-time PCR allelic discrimination using TaqMan probes. Polymorphism NOS3 −786T> C (rs2070744) was analyzed using RFLP-PCR. Results: The studied polymorphisms are involved neither in the response to the anesthetic, nor in the intensity of perceived dental pain. However, in a subset of female patients we found that TRPV1 I316M was associated with a delayed onset of anesthesia. Conclusions: There is no association among these polymorphisms and the time elapsed between the application of the anesthetic and the onset of its effect

Positron lifetime calculations for defects in Zn

The effect of the lattice relaxation at vacancy clusters and interstitial-type dislocation loops on the lifetime of positrons in Zn has been studied. Defective relaxed structures have been generated for the lifetime calculations by using a many-body potential for Zn. From the results, it is inferred that the effect of the atomic relaxation is mainly significant for small vacancy clusters. The lifetime associated with interstitial-type loops is very sensitive to the loop structure and its surroundings. Previous experimental results are compared with the theoretical calculations.Comment: 9 pages, 4 figures, 2 table

Spatial distribution of vacancy defects in GaP wafers

Cathodoluminescencescanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaP wafers. The results show the existence of a gradient of the concentration of vacancy‐type defects along the wafer diameter, which causes inhomogeneity in the emission. Dislocation density and vacancy concentration profiles have been compared