Responsivity Enhancement of InGaAs Based MSM Photodetectors Using 2DEG Layer Sequence and Semitransparent Electrodes

The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with 2um finger-spacing and finger-width exhibit a dark current density less than 10pA/um2, a breakdown voltage of 45V and a saturation capacitance of 30fF. A DC responsivity of 0.61A/W and a –3dB bandwidth of 8.5GHz were achieved. The electric potential distribution is modified by a 2DEG inserted in the layer structure leading, to improved bandwidth

InP-based monolithically integrated photoreceiver for 4-10GBit/S optoelectronic systems

A novel monolithically integrated photoreceiver for 10Gbit/s long-haul optoelectronic transmission systems is presented. The photoreceiver consists of a MSM photodetector and a HEMT amplifier, prepared on an identical InGaAs/InP 2DEG layer structure. The design considerations, preparation procedure and optoelectronic properties of discrete devices and results on a front-end receiver at 1.3um are presented. The MSM photodetector exhibits a responsivity of 0.21A/W and a 3dB bandwidth up to 16GHz. The HEMT amplifiers have a cut-off frequency fT of 45GHz and fmax of 85GHz. A bandwidth up to 16GHz is achievable on optimized photoreceiver circuits

Static analysis of synchronous programs in signal for efficient design of multi-clocked embedded systems

International audienc