Special Issue “Advanced DC-DC Power Converters and Switching Converters”

Nowadays, power electronics is an enabling technology in the energy conversion development scenario [...

Distinguishing hypertension from hypertrophic cardiomyopathy as a cause of left ventricular hypertrophy

Distinguishing Hypertension From Hypertrophic Cardiomyopathy as aCause of Left Ventricular HypertrophyIn most hypertensive patients, left ventricular (LV) wallthickness is normal or only mildly increased (≤13 m

Identification of DC thermal steady-state differential inductance of ferrite power inductors

In this paper, we propose a method for the identification of the differential inductance of saturable ferrite inductors adopted in DC–DC converters, considering the influence of the operating temperature. The inductor temperature rise is caused mainly by its losses, neglecting the heating contribution by the other components forming the converter layout. When the ohmic losses caused by the average current represent the principal portion of the inductor power losses, the steady-state temperature of the component can be related to the average current value. Under this assumption, usual for saturable inductors in DC–DC converters, the presented experimental setup and characterization method allow identifying a DC thermal steady-state differential inductance profile of a ferrite inductor. The curve is obtained from experimental measurements of the inductor voltage and current waveforms, at different average current values, that lead the component to operate from the linear region of the magnetization curve up to the saturation. The obtained inductance profile can be adopted to simulate the current waveform of a saturable inductor in a DC–DC converter, providing accurate results under a wide range of switching frequency, input voltage, duty cycle, and out-put current values

Imprimitive groups highly transitive on blocks

We classify imprimitive groups acting highly transitively on blocks and satisfying conditions common in geometry. They can be realized as suitable subgroups of twisted wreath products

Dead Time Management in GaN Based Three-Phase Motor Drives

This paper deals with the dead time selection in Gallium Nitride (GaN) FET based three-phase brushless DC motor drives. The GaN wide-bandgap (WBG) technology enables the increase of the switching frequency compared with silicon MOSFET. In inverter applications, it is necessary to insert a dead time in the switching signals, to avoid cross conduction in the inverter leg. The dead time selection is a compromise between the switching time and the quality of the inverter output waveforms. GaN FETs can operate with dead times in the range of tens of ns. In this paper the advantages of the GaN technology in the reduction of dead time in terms of output waveforms distortion and speed ripple compared with silicon MOSFET are carried out. Furthermore, an evaluation on the dead time compensation technique compared with the hardware technology reduction is investigated demonstrating the effectiveness and the saving of software and hardware resources obtained by GaN FET devices

Monolithic Bidirectional Switch Based on GaN Gate Injection Transistors

The paper deals with a bi-directional switch based on N-channel enhancement-mode GaN FET. The proposed device is a Gate Injection Transistor monolithic solution to reduce the volume of the switch with high current density and blocking voltage of 600V. It features a dual-gate control pin and two power terminal. In the paper, the main characteristics of the bi-directional switch and the performance in the four-quadrant of operation are examined and discussed. The device characteristics are compared with the traditional MOSFET and IGBT solutions. The gate driver design issues are considered to optimize the switching transient of the GaN-based switch. Finally, an experimental evaluation of the GaN FET as the bidirectional circuit breaker is carried out in an AC power supply system to validate the effectiveness of the proposed monolithic new device