24 research outputs found

    First-principles calculation of femtosecond symmetry-breaking atomic forces in photoexcited Bismuth

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    We present a first-principles method for the calculation of the polarization-dependent atomic forces resulting from optical excitation in a solid. We calculate the induced force driving the E-g phonon mode in bismuth immediately after absorption of polarized light. When radiation with polarization perpendicular to the c axis is absorbed, the photoexcited charge density breaks the threefold rotational symmetry, leading to an atomic force component perpendicular to the axis. We calculate the initial excited electronic distribution as a function of photon energy and polarization and find the resulting atomic force components parallel and perpendicular to the axis. The magnitude of the calculated force is in excellent agreement with that derived from recent measurements of the amplitude of E-g atomic motion and the decay time of several femtoseconds for the driving force

    A Higher-Accuracy van der Waals Density Functional

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    We propose a second version of the van der Waals density functional (vdW-DF2) of Dion et al. [Phys. Rev. Lett. 92, 246401 (2004)], employing a more accurate semilocal exchange functional and the use of a large-N asymptote gradient correction in determining the vdW kernel. The predicted binding energy, equilibrium separation, and potential-energy curve shape are close to those of accurate quantum chemical calculations on 22 duplexes. We anticipate the enabling of chemically accurate calculations in sparse materials of importance for condensed-matter, surface, chemical, and biological physics.Comment: 14 pages, 10 figure

    Ferroelectric phase transition and the lattice thermal conductivity of Pb1-xGexTe alloys

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    We show how tuning the proximity to the soft optical mode phase transition via chemical composition affects the lattice thermal conductivity κ of Pb1-xGexTe alloys. Using first-principles virtual-crystal simulations, we find that the anharmonic contribution to κ is minimized at the phase transition due to the maximized acoustic-optical anharmonic interaction. Mass disorder significantly lowers and flattens the dip in the anharmonic κ over a wide composition range, thus shifting the κ minimum away from the phase transition. The total κ and its anharmonic contribution vary continuously between the rocksalt and rhombohedral phases as expected for the second-order phase transition. The actual phase and its strength of resonant bonding play a less prominent role in reducing the κ of Pb1-xGexTe alloys than the proximity to the phase transition and the atomic mass. Our results show that alloys with soft optical mode transitions are promising materials for achieving low thermal conductivity and possibly high thermoelectric efficiency

    Structural and thermal transport properties of ferroelectric domain walls in GeTe from first principles

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    Ferroelectric domain walls are boundaries between regions with different polarization orientations in a ferroelectric material. Using first-principles calculations, we characterize all different types of domain walls forming on (11¯1), (111), and (1¯10) crystallographic planes in thermoelectric GeTe. We find large structural distortions in the vicinity of most of these domain walls, which are driven by polarization variations. We show that such strong strain-order parameter coupling will considerably reduce the lattice thermal conductivity of GeTe samples containing domain walls with respect to a single crystal. Our results thus suggest that domain engineering is a promising path for enhancing the thermoelectric figure of merit of GeTe

    Broadband phonon scattering in PbTe-based materials driven near ferroelectric phase transition by strain or alloying

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    The major obstacle in the design of materials with low lattice thermal conductivity is the difficulty in efficiently scattering phonons across the entire frequency spectrum. Using first-principles calculations, we show that driving PbTe materials to the brink of the ferroelectric phase transition could be a powerful strategy to solve this problem. We illustrate this concept by applying biaxial tensile (001) strain to PbTe and its alloys with another rocksalt IV-VI material, PbSe; and by alloying PbTe with a rhombohedral IV-VI material, GeTe. This induces extremely soft optical modes at the zone center, which increase anharmonic acoustic-optical coupling and decrease phonon lifetimes at all frequencies. We predict that PbTe, Pb(Se,Te), and (Pb,Ge)Te alloys driven close to the phase transition in the described manner will have considerably lower lattice thermal conductivity than that of PbTe (by a factor of 2–3). The proposed concept may open new opportunities for the development of more efficient thermoelectric materials

    Directly observing squeezed phonon states with femtosecond x-ray diffraction

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    Squeezed states are quantum states of a harmonic oscillator in which the variance of two conjugate variables each oscillate out of phase. Ultrafast optical excitation of crystals can create squeezed phonon states, where the variance of the atomic displacements oscillates due to a sudden change in the interatomic bonding strength. With femtosecond x-ray diffraction we measure squeezing oscillations in bismuth and conclude that they are consistent with a model in which electronic excitation softens all phonon modes by a constant scaling factor

    Time- and momentum-resolved probe of heat transport in photo-excited bismuth

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    We use time- and momentum-resolved x-ray scattering to study thermalization in a photo-excited thin single crystal bismuth film on sapphire. The time-resolved changes of the diffuse scattering show primarily a quasi-thermal phonon distribution that is established in less than or similar to 100 ps and that follows the time-scale of thermal transport. Ultrafast melting measurements under high laser excitation show that epitaxial regrowth of the liquid phase occurs on the time-scale of thermal transport across the bismuth-sapphire interface. (C) 2013 AIP Publishing LLC. (DOI: 10.1063/1.4804291
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