Microchannel Structures of Betavoltaic Silicon Convertors

The paper presents the first results of experimental research on the microchannel structures of betavoltaic silicon converters based on the 63Ni isotope. The areas for further optimization of constructive and technological performance with high conversion efficiency were detected experimentally

Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors

The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed

Biochemical analysis of grape berries of varieties of different ecological and geographical origin after low-temperature storage

An assessment of the productive and economic properties of berries of 14 grape varieties was carried out. Grape varieties with economically useful traits that provide an increase in crop yield and productivity, as well as those with increased biological value and the ability for longer storage have been identified. The results of statistical data processing showed the absence of significant differences between the studied varieties. Correlation analysis between economically useful features of grapes was carried out. The correlation coefficient varied significantly in the range up to 0.888, which indicates a high correlation between the studied features. It has been established that varieties with larger berries are distinguished by a high content of chlorophyll a and b and a low content of carotenoids. An increase in the endogenous level of vitamin C provides an increase in the content of chlorophyll a and b. Since the photosensitive structure of chlorophyll consists of a large number of conjugated double bonds that can easily be destroyed by a free radical mechanism, an increase in the content of active antioxidant protects chlorophyll from destruction and ensures its accumulation in grapes

Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors

The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed

Thermal and Magnetic Field Sensors Based on Injection-coupled Devices

Operation principle and possible applications of a novel type of silicon integrated circuit (IC) device – injection-coupled device (ICD) – are addressed. Examples of possible ICD electrical and physical designs are examined in detail. These are based on the existing CMOS and use bipolar technologies. It is shown that in active mode only one cell of ICD-based sensor chain consumes power. This circumstance enables one to achieve an extraordinarily low power consumption compared to the CMOS ICs. This is because the power consumption of an ICD as a whole is not different of that of a single cell in its IC matrix. These advantages make ICDs highly attractive for a number of important applications, such as, e.g., radiation detectors or magnetic and thermal field detectors. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3625

Simulation the Beta Power Sources Characteristics

In this paper the simulation of silicon beta-stimulated power sources spectral sensitivity characteristics was carried out. It was analyzed the influence of the semiconductor material characteristics (the doping level, lifetime) and power supply design on the photosensitive structures characteristics in order to optimize them

The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply

In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short-circuit current and thus reduces the open circuit voltage. It has been observed that the concentration of the lightly doped region more significantly influence on the current-voltage characteristics than the depth of the p-n-junction. The concentration of the n-region, equal to 1014 cm – 3, can be considered as during betavoltaic power supply design. It is shown that, by increasing the power supply activity the conversion efficiency of the structure increases, too

Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures

This paper describes the principle of operation, construction, architecture and fabrication of a new type of monolithic silicon coordinate photodetector - detector of optical and ionizing radiation (MSCP) on the basis of functional integrated MOS structures. The analytical estimation of electrophysical characteristics MSCP is given. It is shown that MSCP is a specialized monolithic silicon VLSI containing two-dimensional pixel array with high and low voltage functionally integrated structures (FIS) and peripheral electronic circuits of amplification and signal processing matrix. Estimations and presents comparative characteristics are presented. They show potential MSCP possibilities for registration of optical and ionizing radiation. Experimental results of -particles and electrons registration. The possible areas of application, with the possibility of its use in a wide X-ray panels medical supplies, X-rays, etc are considered. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3625

Optimization of Energy Conversion Efficiency Betavoltaic Element Based on Silicon

It was developed the technology of manufacturing planar betavoltaic converter based on silicon, providing a higher rate of conversion of ionizing radiation into electrical energy by reducing reverse currents. The active region of silicon p-i-n structure is 1 cm2, which is irradiated by the of radionuclide 63Ni with the activity 2,7 mCi/cm2. The results of experimental studies of C-V samples are presented. The values of the open-circuit voltage (Voc) 0.111 V are presented and short circuit current density (Jsc) 27 nA/cm2. The maximum density of output power (Pmax) was 1.52 nW/cm2