Operation principle and possible applications of a novel type of silicon integrated circuit (IC) device  –
injection-coupled device (ICD) – are addressed.
Examples of possible ICD electrical and physical designs are examined in detail. These are based on 
the existing CMOS and use bipolar technologies.
It is shown that in active mode only one cell of ICD-based sensor chain consumes power. This circumstance 
enables one to achieve an extraordinarily low power consumption compared to the CMOS ICs. This is because 
the power consumption of an ICD as a whole is not different of that of a single cell in its IC matrix.
These advantages make ICDs highly attractive for a number of important applications, such as, e.g., 
radiation detectors or magnetic and thermal field detectors.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3625

Elnikov, D.

Ivshin, P.A.

Krasnov, A.A.

Kuz’mina, K.A.

Legotin, S.A.

Murashev, V.N.

Rabinovich, O.I.

Tapero, K.I.

Journal of Nano- and Electronic Physics

Electronic Sumy State University Institutional Repository

JOURNAL OF NANO- AND ELECTRONIC PHYSICS ЖУРНАЛ НАНО- ТА ЕЛЕКТРОННОЇ ФІЗИКИ Vol. 6 No 3, 03021(4pp) (2014) Том 6 № 3, 03021(4cc) (2014)   The article was reported at the International Conference «The Advanced Technology, Equipment and Analytical Systems for Materials», Kursk, 13-14 May, 2014 2077-6772/2014/6(3)03021(4) 03021-1  2014 Sumy State University Thermal and Magnetic Field Sensors Based on Injection-coupled Devices  V.N. Murashev1,*, S.A. Legotin1, P.A. Ivshin1, K.I. Tapero2, O.I. Rabinovich1, D. Elnikov1,  A.A. Krasnov1, K.A. Kuz’mina1  1 National University of Science and Technology “MISIS”,  4, Leninskiy Prospect, 119049 Moscow, Russian Federation 2 Research Institute of Scientific Instruments (RISI), 8, Turayevo, 140080 Lytkarino, Moscow Region, Russian Federation  (Received 19 May 2014; published online 15 July 2014)  Operation principle and possible applications of a novel type of silicon integrated circuit (IC) device –injection-coupled device (ICD) – are addressed. Examples of possible ICD electrical and physical designs are examined in detail. These are based on the existing CMOS and use bipolar technologies. It is shown that in active mode only one cell of ICD-based sensor chain consumes power. This circumstance enables one to achieve an extraordinarily low power consumption compared to the CMOS ICs. This is because the power consumption of an ICD as a whole is not different of that of a single cell in its IC matrix. These advantages make ICDs highly attractive for a number of important applications, such as, e.g., radiation detectors or magnetic and thermal field detectors.  Keywords: Sensor, Temperature, Magnetic field, Functionally integrated structure.   PACS number: 85.40. – e                                                             * vnmurashev@mail.ru 1. INTRODUCTION  There is an obvious incentive for the development of a new generation of electronic sensors, characterized by outstanding performance and wide application area such as simultaneous thermal and magnetic field measurement. Accordingly, the possible applications of a novel type of silicon cell integrated circuits–injection-coupled devices (ICD) [1-3] as a thermal and magnetic field sensors–is addressed in this paper.  2. OPERATION PRINCIPLE OF ICD  The schematic diagram of ICD is a chain of similar serial-connected cells of a solid silicon integrated cir-cuit as shown in Fig. 1.    Fig. 1 – Schematic diagram of ICD  The output of each cell is connected to the input of the subsequent cell. Each cell contains a bipolar transistor T1, capacitor C, base resistor R1 and collector resistor R2 (each single cell is shown by a dashed line). The circuit operates as following. If a negative (or posi-tive) long electric pulse V in is applied to the input of the first cell, the R1C chain differentiates this signal. The fall time constant for the negative pulse τc is equal to the rise time constant for the positive pulse and can be defined as  τс  R1·C, (1)  where τс is the fall time constant, R1 is the resistance of the base resistor,·C is the resistance of the base capacitor. As a result, two short pulses reach the base of the transistor T1 (Fig. 2). The short positive pulse is power-ful enough for opening the transistor and putting it in a saturation mode. The time τsat, during which the tran-sistor is saturated, depends on the relationship be-tween resistors R2 and R1, transistor gain h21E and the life time of the minority carriers in the base region of the transistor τ0:   τsat ≈ τ0·ln (h21E·R2 / R1) (2)  where τsat is the saturation time, τ0 is the life time of the minority carriers,·h21E is transistor gain,·R2 is the re-sistance of the collector resistor, R1 is the resistance of the base resistor. The output signal from the collector of the transis-tor is applied to the input of the next cell, and the pro-cess is repeated again there. So, the pulse applied to the input of the first cell will propagate sequentially through the full chain of cells with the delay equal to τsat in each cell. The signal propagation time (the time of the cycle Tc) through the full chain from the first to the last cell can be obtained using the equation   Tc  n·τsat (3)  where Tc is the time of the cycle, n is the number of cells, τsat is the saturation time. Single pulse on input of ICD cause the voltage pulses in the power supply circuit. The pulse count is proportionally with the life time of the minority carri-ers e. g. with influence quantity. The number of puls-es arriving with given time interval Tc is logged by the counter.  V.N. MURASHEV, S.A. LEGOTIN, ET AL. J. NANO- ELECTRON. PHYS. 6, 03021 (2014)   03021-2    a     b  Fig. 2 – Pulse waveform at the input of a cell (a), at the base of the transistor T1 (b)  The most important ICD features are: − extraordinarily low power consumption, because at normal operating conditions only one cell, being in an active operating mode, consumes power (if one ne-glects leakage currents in the transistors); − high reliability due to, sort of, a redundancy that is achieved by designing the ICD as a duplicated spiral coil; − the accuracy of measurement of the external in-fluence (temperature, magnetic field etc.) depends line-arly on the number of cells in a ICD chain (3). This number can be very high in integrated circuits. In this case, the technological parameter spread for elements of cells (resistors, capacitors) and fluctuation in minori-ty carrier life time in transistors will hardly affect the results of measurements. This circumstance, in addition to high reliability and low power consumption, enables one to create  high-precision sensors for measurements of tempera-ture field on various surfaces and for localized meas-urements of the environment temperature. Sensors can be employed in various integrated circuits depending on the application. A variety of technologies (bipolar or MOS) can be used for this purpose. Various types of ICD based sensors are described below.  3. ICD APPLICATIONS  3.1 Temperature Sensor  The equations (2) and (3) indicate that the saturation time τsat and the time of the cycle Tc depend linearly on the minority carrier life time τ0. In silicon, τ0 is defined by the location of Fermi level with respect to the levels for recombination centers in the band-gap. The location of Fermi level is known to depend on the dopant concen-tration and temperature, so that the minority carrier life time is temperature dependent (Fig. 3).    Fig. 3 – Minority carrier life time for n-type semiconductor vs. temperature  So, there is a capability of determining the temper-ature by measuring the time Tc of the cycle. An example of a design of a cell fabricated using the standard bipolar isoplanar technology is shown in Fig. 4. The cell contains a vertical bipolar n-p-n-transistor, polysilicon base (R1) and collector (R2) resis-tors and a capacitor based on a p-n-junction.    Fig. 4 – Cell design for ICD based temperature sensor with vertical n-p-n-transistor  3.2 Magnetic Field Sensor  Fig. 5 presents the cell design for magnetic field sensor. The main difference of this structure from the described above is that this cell uses the capacitor based on MOS structure. Moreover, the base region is isolated by p-n-junction and has a greater extent in one of lateral directions. It provides higher magnetic decli-nation of electrons and an increase in their path length in the presence of magnetic field [2] that increases sub-stantially the cell delay time.    Fig. 5 – Cell design for ICD based magnetic field sensor  4. EXPERIMENT AND ITS RESULTS  To study the functionality of an ICD based tempera-ture sensor a special test bench comprised of 200 cells was made [8, 9] (Fig. 6).  THERMAL AND MAGNETIC FIELD SENSORS… J. NANO- ELECTRON. PHYS. 6, 03021 (2014)   03021-3 Each cell contained: − a silicon bipolar n-p-n-transistor BC847 with the cutoff frequency of 100 MHz, the gain of not less than 90, collector-emitter breakdown voltage of 45 V, the capacitance of the collector and the emitter p-n-junctions of 1.5 and 11 pF, respectively; − two 0805 type surface-mounted 10 and 200 e-sistors; − a 0805 type surface mounted 20 pF capacitor. The temperature was measured using the model of ICD based sensor and also using the reference digital thermometer DS1624 (Maxim). The measurement was performed in the range of 258-297 K within a cold chamber and in the range of 297-399 K within a ther-mostat. The time Tc of cycle was measured as a func-tion of temperature. This time was determined by the number of clocks per cycle. Fig. 7 shows the results of the measurements. Each experimental point in this figure was obtained using four measurements. The standard deviation is shown as well.    Fig. 6 – The photo of ICD based temperature sensor model    Fig. 7 – Dependence of delay time (time of a cycle) on temper-ature  As evident from the figure, an increase in tempera-ture of 1 K leads to the increase in the delay time of 10 s that corresponds to 100 pulses of quartz oscilla-tor. The accuracy of measurement of temperature is higher than 0.01 K. It can be also expected that the parameters spread and the noise level for different el-ements of sensor chain will not affect significantly the results of the measurement. The delay time Tc (the time of one cycle) and the accuracy of the measurement depend linearly on the number of cells in the ICD based sensor chain.  5. CONCLUSIONS  ICDs can be considered as promising devices for the new generation of sensors. ICDs are characterized by high reliability, low power  consumption,  simple  fabri-cation technologies, effective digital output signals and a possibility of integration of different types of sensors in one chip. These features can be considered as crucial advantages of ICDs in comparison with the existing sensor types. The usage of ICDs in sensor systems on flat surfac-es can be considered as the most promising one. Such systems can be applied for − investigation of distribution of temperature on human body surface in medical applications; − measurement of distribution of temperature on crystal surfaces; − thermal sensor units in automatic fire-extinguishing systems etc. Also ICDs could be used as cells of position-sensitive radiation detectors [10, 11]. An example of single IC implemented ICD-based temperature sensor is shown on Fig. 8. The IC include the ICD as a sensor of its own, the counting unit (a counter and a count pulse oscillator) and the serial in-terface unit interchanging digital data with the micro-processor.    Fig. 8 – An example of the ICD-based IC implementation  In this example the count pulse oscillator has the quartz crystal control. The serial interface unit has two data lines MOSI and MISO and a clock line SCK (SPI interface). This unit initiate the device reset and measurement start on command from the microprocessor. Upon completing the measurement the pulse count from the counter (CDATA), overflow flag (OF) and other status data (not shown here) load into the serial interface unit regis-ters. All received data transfer to the microprocessor.  AKNOWLEDGEMENTS  This study was supported by the Ministry of Educa-tion and Science of the Russian Federation within a basic unit of the state task for NITU "MISIS".        V.N. MURASHEV, S.A. LEGOTIN, ET AL. J. NANO- ELECTRON. PHYS. 6, 03021 (2014)   03021-4 REFERENCES  1. V.N. Murashev, Pat. 2147772, Russian Federation, publ. 20.04.2000. 2. V.N. Murashev, S.A. Legotin, Pat. 2392672, Russian Fed-eration, publ. 20.07.2009. 3. V.N. Mourachev, Pat. WO/2006/132560, WIPO, G11C 11/401 (2006.01), G11C 19/00 (2006.01), publ. 14.12.2006. 4. V.V. Gorbachev, L.G. Spitsyna, Physics of Semiconductors and Metals (Moscow: Metallurgy: 1982) [in Russian]. 5. H. Blanchard, F. de Montmollin, J. Hubin, R.S. Popovic, Sensor. Actuat. A: Phys. 82 No 1-3, 144 (2000). 6. V.N. Mordkovich, M.L. Baranochnikov, A.V. Leonov, A.D. Mokrushin, H.M. Omelyanovskaya, D.M. Pazhin, Sensor. Systems No7, 33 (2003). 7. T. Saito, V.N. Murashev, A.I. Manyushin, E.F. Karpov, V.N. Mordkovich, E.S. Gornev, G.Ya. Krasnikov, Pat. 2196981, Russian Federation, publ. 20.01.2003. 8. S.A. Legotin, P.A. Ivshin, V.N. Murashev, M.N. Orlova, A.V. Sotnikov, Proc. Universities. Series: Mater. Electron. Technics No 4, 63 (2007). 9. S.A. Legotin, P.A. Ivshin, A.S. Korol’chenko, V.N. Murashev, Instrum. Exp. Tech 53 No 6, 788 (2010). 10. V.N. Murashev, S.A. Legotin, O.M. Orlov, A.S. Korol'chenko, P.A. Ivshin, Instrum. Exp. Tech 53 No. 5, 657 (2010). 11. D.L. Volkov, D.E. Karmanov, V.N. Murashev, S.A. Legotin, R.A. Mukhamedshin, A.P. Chubenko,  Instrum. Exp. Tech 52 No. 5, 655 (2009).   

Thermal and Magnetic Field Sensors Based on Injection-coupled Devices

SocioEconomic Challenges Journal (Sumy State University)

JOURNAL OF NANO- AND ELECTRONIC PHYSICS ЖУРНАЛ НАНО- ТА ЕЛЕКТРОННОЇ ФІЗИКИ 
Vol. 6 No 3, 03021(4pp) (2014) Том 6 № 3, 03021(4cc) (2014) 
 
 
The article was reported at the International Conference «The Advanced Technology, Equipment and Analytical Systems for Materials», Kursk, 13-14 May, 2014 
2077-6772/2014/6(3)03021(4) 03021-1  2014 Sumy State University 
Thermal and Magnetic Field Sensors Based on Injection-coupled Devices 
 
V.N. Murashev1,*, S.A. Legotin1, P.A. Ivshin1, K.I. Tapero2, O.I. Rabinovich1, D. Elnikov1,  
A.A. Krasnov1, K.A. Kuz’mina1 
 
1 National University of Science and Technology “MISIS”,  
4, Leninskiy Prospect, 119049 Moscow, Russian Federation 
2 Research Institute of Scientific Instruments (RISI), 
8, Turayevo, 140080 Lytkarino, Moscow Region, Russian Federation 
 
(Received 19 May 2014; published online 15 July 2014) 
 
Operation principle and possible applications of a novel type of silicon integrated circuit (IC) device –
injection-coupled device (ICD) – are addressed. 
Examples of possible ICD electrical and physical designs are examined in detail. These are based on 
the existing CMOS and use bipolar technologies. 
It is shown that in active mode only one cell of ICD-based sensor chain consumes power. This circumstance 
enables one to achieve an extraordinarily low power consumption compared to the CMOS ICs. This is because 
the power consumption of an ICD as a whole is not different of that of a single cell in its IC matrix. 
These advantages make ICDs highly attractive for a number of important applications, such as, e.g., 
radiation detectors or magnetic and thermal field detectors. 
 
Keywords: Sensor, Temperature, Magnetic field, Functionally integrated structure. 
 
 PACS number: 85.40. – e 
 
 
                                                          
* vnmurashev@mail.ru 
1. INTRODUCTION 
 
There is an obvious incentive for the development of 
a new generation of electronic sensors, characterized by 
outstanding performance and wide application area 
such as simultaneous thermal and magnetic field 
measurement. 
Accordingly, the possible applications of a novel 
type of silicon cell integrated circuits–injection-coupled 
devices (ICD) [1-3] as a thermal and magnetic field 
sensors–is addressed in this paper. 
 
2. OPERATION PRINCIPLE OF ICD 
 
The schematic diagram of ICD is a chain of similar 
serial-connected cells of a solid silicon integrated cir-
cuit as shown in Fig. 1. 
 
 
 
Fig. 1 – Schematic diagram of ICD 
 
The output of each cell is connected to the input of the 
subsequent cell. Each cell contains a bipolar transistor 
T1, capacitor C, base resistor R1 and collector resistor R2 
(each single cell is shown by a dashed line). 
The circuit operates as following. If a negative (or posi-
tive) long electric pulse V in is applied to the input of the 
first cell, the R1C chain differentiates this signal. The fall 
time constant for the negative pulse τc is equal to the rise 
time constant for the positive pulse and can be defined as 
 τс  R1·C, (1) 
 
where τс is the fall time constant, R1 is the resistance of 
the base resistor,·C is the resistance of the base capacitor. 
As a result, two short pulses reach the base of the 
transistor T1 (Fig. 2). The short positive pulse is power-
ful enough for opening the transistor and putting it in a 
saturation mode. The time τsat, during which the tran-
sistor is saturated, depends on the relationship be-
tween resistors R2 and R1, transistor gain h21E and the 
life time of the minority carriers in the base region of 
the transistor τ0: 
 
 τsat ≈ τ0·ln (h21E·R2 / R1) (2) 
 
where τsat is the saturation time, τ0 is the life time of the 
minority carriers,·h21E is transistor gain,·R2 is the re-
sistance of the collector resistor, R1 is the resistance of 
the base resistor. 
The output signal from the collector of the transis-
tor is applied to the input of the next cell, and the pro-
cess is repeated again there. So, the pulse applied to 
the input of the first cell will propagate sequentially 
through the full chain of cells with the delay equal to 
τsat in each cell. The signal propagation time (the time 
of the cycle Tc) through the full chain from the first to 
the last cell can be obtained using the equation 
 
 Tc  n·τsat (3) 
 
where Tc is the time of the cycle, n is the number of 
cells, τsat is the saturation time. 
Single pulse on input of ICD cause the voltage 
pulses in the power supply circuit. The pulse count is 
proportionally with the life time of the minority carri-
ers e. g. with influence quantity. The number of puls-
es arriving with given time interval Tc is logged by 
the counter. 
 V.N. MURASHEV, S.A. LEGOTIN, ET AL. J. NANO- ELECTRON. PHYS. 6, 03021 (2014) 
 
 
03021-2 
 
 
 a 
 
 
 
 b 
 
Fig. 2 – Pulse waveform at the input of a cell (a), at the base of 
the transistor T1 (b) 
 
The most important ICD features are: 
− extraordinarily low power consumption, because 
at normal operating conditions only one cell, being in 
an active operating mode, consumes power (if one ne-
glects leakage currents in the transistors); 
− high reliability due to, sort of, a redundancy that 
is achieved by designing the ICD as a duplicated spiral 
coil; 
− the accuracy of measurement of the external in-
fluence (temperature, magnetic field etc.) depends line-
arly on the number of cells in a ICD chain (3). This 
number can be very high in integrated circuits. In this 
case, the technological parameter spread for elements 
of cells (resistors, capacitors) and fluctuation in minori-
ty carrier life time in transistors will hardly affect the 
results of measurements. 
This circumstance, in addition to high reliability 
and low power consumption, enables one to create  
high-precision sensors for measurements of tempera-
ture field on various surfaces and for localized meas-
urements of the environment temperature. Sensors can 
be employed in various integrated circuits depending 
on the application. A variety of technologies (bipolar or 
MOS) can be used for this purpose. 
Various types of ICD based sensors are described 
below. 
 
3. ICD APPLICATIONS 
 
3.1 Temperature Sensor 
 
The equations (2) and (3) indicate that the saturation 
time τsat and the time of the cycle Tc depend linearly on 
the minority carrier life time τ0. In silicon, τ0 is defined 
by the location of Fermi level with respect to the levels 
for recombination centers in the band-gap. The location 
of Fermi level is known to depend on the dopant concen-
tration and temperature, so that the minority carrier life 
time is temperature dependent (Fig. 3). 
 
 
 
Fig. 3 – Minority carrier life time for n-type semiconductor vs. 
temperature 
 
So, there is a capability of determining the temper-
ature by measuring the time Tc of the cycle. 
An example of a design of a cell fabricated using the 
standard bipolar isoplanar technology is shown in 
Fig. 4. The cell contains a vertical bipolar n-p-n-
transistor, polysilicon base (R1) and collector (R2) resis-
tors and a capacitor based on a p-n-junction. 
 
 
 
Fig. 4 – Cell design for ICD based temperature sensor with 
vertical n-p-n-transistor 
 
3.2 Magnetic Field Sensor 
 
Fig. 5 presents the cell design for magnetic field 
sensor. The main difference of this structure from the 
described above is that this cell uses the capacitor 
based on MOS structure. Moreover, the base region is 
isolated by p-n-junction and has a greater extent in one 
of lateral directions. It provides higher magnetic decli-
nation of electrons and an increase in their path length 
in the presence of magnetic field [2] that increases sub-
stantially the cell delay time. 
 
 
 
Fig. 5 – Cell design for ICD based magnetic field sensor 
 
4. EXPERIMENT AND ITS RESULTS 
 
To study the functionality of an ICD based tempera-
ture sensor a special test bench comprised of 200 cells 
was made [8, 9] (Fig. 6). 
 THERMAL AND MAGNETIC FIELD SENSORS… J. NANO- ELECTRON. PHYS. 6, 03021 (2014) 
 
 
03021-3 
Each cell contained: 
− a silicon bipolar n-p-n-transistor BC847 with the 
cutoff frequency of 100 MHz, the gain of not less than 
90, collector-emitter breakdown voltage of 45 V, the 
capacitance of the collector and the emitter p-n-
junctions of 1.5 and 11 pF, respectively; 
− two 0805 type surface-mounted 10 and 200 e-
sistors; 
− a 0805 type surface mounted 20 pF capacitor. 
The temperature was measured using the model of 
ICD based sensor and also using the reference digital 
thermometer DS1624 (Maxim). The measurement was 
performed in the range of 258-297 K within a cold 
chamber and in the range of 297-399 K within a ther-
mostat. The time Tc of cycle was measured as a func-
tion of temperature. This time was determined by the 
number of clocks per cycle. Fig. 7 shows the results of 
the measurements. Each experimental point in this 
figure was obtained using four measurements. The 
standard deviation is shown as well. 
 
 
 
Fig. 6 – The photo of ICD based temperature sensor model 
 
 
 
Fig. 7 – Dependence of delay time (time of a cycle) on temper-
ature 
 
As evident from the figure, an increase in tempera-
ture of 1 K leads to the increase in the delay time of 
10 s that corresponds to 100 pulses of quartz oscilla-
tor. The accuracy of measurement of temperature is 
higher than 0.01 K. It can be also expected that the 
parameters spread and the noise level for different el-
ements of sensor chain will not affect significantly the 
results of the measurement. The delay time Tc (the 
time of one cycle) and the accuracy of the measurement 
depend linearly on the number of cells in the ICD 
based sensor chain. 
 
5. CONCLUSIONS 
 
ICDs can be considered as promising devices for the 
new generation of sensors. ICDs are characterized by 
high reliability, low power  consumption,  simple  fabri-
cation technologies, effective digital output signals and 
a possibility of integration of different types of sensors 
in one chip. These features can be considered as crucial 
advantages of ICDs in comparison with the existing 
sensor types. 
The usage of ICDs in sensor systems on flat surfac-
es can be considered as the most promising one. Such 
systems can be applied for 
− investigation of distribution of temperature on 
human body surface in medical applications; 
− measurement of distribution of temperature on 
crystal surfaces; 
− thermal sensor units in automatic fire-
extinguishing systems etc. 
Also ICDs could be used as cells of position-
sensitive radiation detectors [10, 11]. 
An example of single IC implemented ICD-based 
temperature sensor is shown on Fig. 8. The IC include 
the ICD as a sensor of its own, the counting unit (a 
counter and a count pulse oscillator) and the serial in-
terface unit interchanging digital data with the micro-
processor. 
 
 
 
Fig. 8 – An example of the ICD-based IC implementation 
 
In this example the count pulse oscillator has the 
quartz crystal control. 
The serial interface unit has two data lines MOSI 
and MISO and a clock line SCK (SPI interface). This 
unit initiate the device reset and measurement start on 
command from the microprocessor. Upon completing 
the measurement the pulse count from the counter 
(CDATA), overflow flag (OF) and other status data (not 
shown here) load into the serial interface unit regis-
ters. All received data transfer to the microprocessor. 
 
AKNOWLEDGEMENTS 
 
This study was supported by the Ministry of Educa-
tion and Science of the Russian Federation within a 
basic unit of the state task for NITU "MISIS". 
 
 
 
 
 
 
 V.N. MURASHEV, S.A. LEGOTIN, ET AL. J. NANO- ELECTRON. PHYS. 6, 03021 (2014) 
 
 
03021-4 
REFERENCES 
 
1. V.N. Murashev, Pat. 2147772, Russian Federation, publ. 
20.04.2000. 
2. V.N. Murashev, S.A. Legotin, Pat. 2392672, Russian Fed-
eration, publ. 20.07.2009. 
3. V.N. Mourachev, Pat. WO/2006/132560, WIPO, G11C 
11/401 (2006.01), G11C 19/00 (2006.01), publ. 14.12.2006. 
4. V.V. Gorbachev, L.G. Spitsyna, Physics of Semiconductors 
and Metals (Moscow: Metallurgy: 1982) [in Russian]. 
5. H. Blanchard, F. de Montmollin, J. Hubin, R.S. Popovic, 
Sensor. Actuat. A: Phys. 82 No 1-3, 144 (2000). 
6. V.N. Mordkovich, M.L. Baranochnikov, A.V. Leonov, 
A.D. Mokrushin, H.M. Omelyanovskaya, D.M. Pazhin, 
Sensor. Systems No7, 33 (2003). 
7. T. Saito, V.N. Murashev, A.I. Manyushin, E.F. Karpov, 
V.N. Mordkovich, E.S. Gornev, G.Ya. Krasnikov, 
Pat. 2196981, Russian Federation, publ. 20.01.2003. 
8. S.A. Legotin, P.A. Ivshin, V.N. Murashev, M.N. Orlova, 
A.V. Sotnikov, Proc. Universities. Series: Mater. Electron. 
Technics No 4, 63 (2007). 
9. S.A. Legotin, P.A. Ivshin, A.S. Korol’chenko, 
V.N. Murashev, Instrum. Exp. Tech 53 No 6, 788 (2010). 
10. V.N. Murashev, S.A. Legotin, O.M. Orlov, 
A.S. Korol'chenko, P.A. Ivshin, Instrum. Exp. Tech 53 
No. 5, 657 (2010). 
11. D.L. Volkov, D.E. Karmanov, V.N. Murashev, 
S.A. Legotin, R.A. Mukhamedshin, A.P. Chubenko,  
Instrum. Exp. Tech 52 No. 5, 655 (2009). 
 
 


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Thermal and Magnetic Field Sensors Based on Injection-coupled Devices

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