Defect tolerance in as-deposited selenium-alloyed cadmium telluride solar cells

The efficiency of cadmium telluride (CdTe) solar cells is limited primarily by voltage, which is known to depend on the carrier concentration and carrier lifetimes within the absorber layer of the cell. Here, cathodoluminescence measurements are made on an as-deposited CdSeTe/CdTe solar cell that show that selenium alloyed CdTe material luminesces much more strongly than non-alloyed CdTe. This reduction in non-radiative recombination in the CdSeTe suggests that the selenium gives it a certain defect tolerance. This has implications for carrier lifetimes and voltages in cadmium telluride solar cells

Advanced co-sublimation hardware for deposition of graded ternary alloys in thin-film applications

© 2018 IEEE. CdTe photovoltaic devices with efficiency over 22% have been demonstrated. Sublimated CdTe photovoltaics with efficiency over 19% have been reported using graded alloying of Se in CdTe absorber films. Grading of alloy films has been identified as an important characteristic to achieve higher device performance using more complex device structures. An advanced co-sublimation source has been designed and developed to deposit highly controlled CdTe based ternary alloys. An advanced shutter mechanism enables changing the composition of the deposited films during sublimation. The hardware used for advanced co-sublimation and initial materials characterization is presented in this study

Large area 3D elemental mapping of a MgZnO/CdTe solar cell with correlative EBSD measurements

Chlorine is known to have numerous effects on the electronic performance of cadmium telluride (CdTe) solar cells, such as doping the CdTe absorber material and pacifying crystal defects. However the mechanisms by which the element improves device efficiency following the cadmium chloride treatment are still not fully understood. In this work the distributions of chlorine in a high efficiency CdTe device are tracked over large areas and in three dimensions by high resolution dynamic SIMS measurements. The results give new insights into the role of chlorine and defects on the performance of CdTe solar cells, particularly when combined with correlative backscatter diffraction measurements

Three-dimensional imaging of selenium and chlorine distributions in highly efficient selenium-graded cadmium telluride solar cells

Thin-film solar modules based on cadmium telluride (CdTe) technology currently produce the world's lowest cost solar electricity. However, the best CdTe modules now contain a cadmium selenium telluride (CST) alloy at the front of the absorber layer. Despite this, research characterizing the behavior of selenium in alloyed CdTe devices is currently very limited. Here we employ advanced secondary ion mass spectrometry measurements to map the three-dimensional distribution of selenium in a graded CST/CdTe device for the first time. We find significant interdiffusion of selenium between the CST and CdTe layers in the cell, primarily out of the CST grain boundaries and up into the CdTe grain boundaries and grain fringes above. This results in significant lateral variations in selenium concentrations across grains and hence also lateral fields, which we estimate using the measured selenium concentrations

TEM-based cathodoluminescence of a Selenium-alloyed CdTe solar cell

Since 2015, commercial sample holders have been available that enable cathodoluminescence imaging of semiconductors in the TEM. Despite this, issues with low signal have meant that high resolution TEM-CL imaging has so far not been achieved on a solar cell. Here, we use xenon ion milling and cryogenic sample cooling to boost signal from the TEM foil, enabling high resolution CL imaging of a bilayer CdSeTe/CdTe solar cell for the first time. The results show that selenium has a passivation effect on grain boundaries in alloyed CdSeTe material, helping to explain the superior performance of CdSeTe solar cells

Degradation of Mg-doped zinc oxide buffer layers in thin film CdTe solar cells

Cadmium Sulphide is the conventional n-type buffer layer used in thin film Cadmium Telluride solar cells. It is well known that Cadmium Sulphide causes optical losses and sulphur diffuses into the absorber during high temperature activation. Sputter-deposited Mg-doped ZnO (MZO) has been shown to be an attractive buffer layer for Cadmium Telluride solar cells due to its transparency and tuneable band gap. It is also stable to high temperature processing and avoids diffusion of elements into the cadmium telluride absorber during the cadmium chloride activation treatment. However, degradation is observed in solar cells incorporating MZO buffer layers. Analysis of the MZO film surface potential has revealed significant fluctuations in the thin film work function once the layer is exposed to the atmosphere following deposition. These fluctuations are attributed to the high reactivity to water vapour of the MgO contained in the MZO films. This has been analysed using X-ray Photoelectron Spectroscopy to determine corresponding changes in the surface chemistry. The Zinc Oxide component is relatively stable, but the analysis shows that MgO forms a Mg(OH)2 layer on the MZO surface which forms a secondary barrier at the MZO/CdTe interface and/or at the interface between MZO and the Fluorine-doped SnO2. This affects the Fill Factor and as a consequence it degrades the conversion efficiency

Understanding the role of selenium in defect passivation for highly efficient selenium-alloyed cadmium telluride solar cells

Electricity produced by cadmium telluride (CdTe) photovoltaic modules is the lowest-cost electricity in the solar industry, and now undercuts fossil fuel-based sources in many regions of the world. This is due to recent efficiency gains brought about by alloying selenium into the CdTe absorber, which has taken cell efficiency from 19.5% to its current record of 22.1%. Although the addition of selenium is known to reduce the bandgap of the absorber material, and hence increase the cell short-circuit current, this effect alone does not explain the performance improvement. Here, by means of cathodoluminescence and secondary ion mass spectrometry, we show that selenium enables higher luminescence efficiency and longer diffusion lengths in the alloyed material, indicating that selenium passivates critical defects in the bulk of the absorber layer. This passivation effect explains the record-breaking performance of selenium-alloyed CdTe devices, and provides a route for further efficiency improvement that can result in even lower costs for solar-generated electricity

Understanding the copassivation effect of Cl and Se for CdTe grain boundaries

Chlorine passivation treatment of cadmium telluride (CdTe) solar cells improves device performance by assisting electron−hole carrier separation at CdTe grain boundaries. Further improvement in device efficiency is observed after alloying the CdTe absorber layer with selenium. High-resolution secondary ion mass spectroscopy (NanoSIMS) imaging has been used to determine the distribution of selenium and chlorine at the CdTe grain boundaries in a selenium-graded CdTe device. Atomistic modeling based on density functional theory (DFT-1/2) further reveals that the presence of selenium and chlorine at an exemplar (110)/(100) CdTe grain boundary passivates critical acceptor defects and leads to n-type inversion at the grain boundary. The defect state analysis provides an explanation for the band-bending effects observed in the energy band alignment results, thereby elucidating mechanisms for high efficiencies observed in Se-alloyed and Cl-passivated CdTe solar cells

Stable magnesium zinc oxide by reactive Co-Sputtering for CdTe-based solar cells

© 2020 Magnesium zinc oxide (MZO) is a promising front contact material for CdTe solar cells. Due to its higher band gap than traditional CdS, MZO can reduce parasitic absorption to significantly increase short-circuit current density while also providing a benefit of conduction band offset tuning through Mg:Zn ratio optimization. MZO has been successfully implemented into CdTe devices, however its stability has been of concern. The MZO stability issue has been attributed to the presence of oxygen in the CdTe device processing ambient, leading to double-diode behavior (S-kink) in the current density-voltage curves. Here we report on MZO thin films deposited by reactive co-sputtering. The reactively co-sputtered MZO thin films have encouraging stability, show no significant variation in work function of the surface over a period of 6 months, as measured by Kelvin probe. Energy conversion efficiencies of around 16% have been achieved both with and without presence of oxygen in device processing ambients across multiple research facilities. These efficiencies should be possible to increase further by tuning of the thin film deposition and device processing parameters, especially through optimization of the back contact