Development of Graphene Based Cobalt-Ferrites Nanocomposites for Microwave Shielding

The study is related to cobalt ferrites nanocomposites embedded with graphene nanosheets, prepared by co-precipitation method. Various doping of graphene from 0.1% up to 1% were applied within the cobalt ferrite structure to study its microwave and mechanical effects on the nanocomposites. Microstructural analysis confirms the homogeneous dispersion and successful adhesion of graphene nanosheets within the cobalt ferrite matrix. Microwave absorbing capacity of these samples was studied by Agilent network analyzer in low frequency band of microwave (1MHz to 2 GHz), Results reveals that graphene incorporation not only improved the absorption capacity of cobalt ferrites (13dB-17d), but also widened its maximum absorption peak. This change was supposed to be due to inhomogeneity and combine effects of electric (graphene), and magnetic dielectric nature (cobalt ferrites). Further mechanical characterizations reveal that our composites samples have higher flexural strength (19.92 MPa for 1% loading) and improved toughness (>6000 J/mm2) compare to pure cobalt ferrites (10.28 MPa, 1000 J/mm2)

Controlled Morphology and Its Effects on the Thermoelectric Properties of SnSe2 Thin Films

In the last few years, the thermoelectric properties of tin selenide (SnSe) have been explored in much detail due to its high efficiency and green nature, being free of Te and Pb. In the same chalcogenide family, SnSe2 is also a layered structured material, but its thermoelectric potential has not been widely explored experimentally. Since SnSe2 has the layered structure, its electrical transport properties may strongly be affected by its microstructure and morphology. Here, we report the effect of reaction time on the structure, phase, and morphology of the SnSe2 during solvothermal synthesis process. We have studied four SnSe2 samples with different reaction times. The sample obtained after 16 h of reaction time was named as M1, for 20 h M2, similarly for 24 h was M3 and for 48 hours’ time, the sample was named as M4. We investigated its thermoelectric properties and found that phase purity and morphology can affect the thermoelectric performance of the synthesized samples. The peak power factor (PF) value along the ab plane was (0.69 μWcm−1K−2) for the M4 sample at 575 K, which was the highest among all the measured samples. The comparatively larger PF value of sample M4 can be related to the increase in its electrical conductivity due to increase in phase purity and band gap reduction

Controlled Morphology and Its Effects on the Thermoelectric Properties of SnSe2 Thin Films

In the last few years, the thermoelectric properties of tin selenide (SnSe) have been explored in much detail due to its high efficiency and green nature, being free of Te and Pb. In the same chalcogenide family, SnSe2 is also a layered structured material, but its thermoelectric potential has not been widely explored experimentally. Since SnSe2 has the layered structure, its electrical transport properties may strongly be affected by its microstructure and morphology. Here, we report the effect of reaction time on the structure, phase, and morphology of the SnSe2 during solvothermal synthesis process. We have studied four SnSe2 samples with different reaction times. The sample obtained after 16 h of reaction time was named as M1, for 20 h M2, similarly for 24 h was M3 and for 48 hours’ time, the sample was named as M4. We investigated its thermoelectric properties and found that phase purity and morphology can affect the thermoelectric performance of the synthesized samples. The peak power factor (PF) value along the ab plane was (0.69 μWcm−1K−2) for the M4 sample at 575 K, which was the highest among all the measured samples. The comparatively larger PF value of sample M4 can be related to the increase in its electrical conductivity due to increase in phase purity and band gap reduction

Thermoelectric Properties of Cu2SnSe3-SnS Composite

Heavily doped degenerate semiconductors such as Cu2SnSe3 (CTSe) attracted attention in thermoelectric (TE) and optoelectronic fields, due to their high electrical conductivity and small band gap. The small Seebeck coefficient of undoped CTSe, however, is the major issue in achieving high TE performance (figure of merit, ZT). Here, we report that the Seebeck coefficient of CTSe can be controlled by adding SnS within a CTSe matrix. CTSe-SnS composite has not only high Seebeck coefficient in the range of 300–500 µVolt/K but thermal conductivity which is lower than that of pristine CTSe due to the scattering at the interface between the matrix and the SnS particles. A reasonable ZT of 0.18 is achieved at 570 K by adding a small amount (3 wt.%) of SnS to the CTSe matrix