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    Core–Shell Vanadium Modified Titania@β-In<sub>2</sub>S<sub>3</sub> Hybrid Nanorod Arrays for Superior Interface Stability and Photochemical Activity

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    Core–shell rutile TiO<sub>2</sub>@β-In<sub>2</sub>S<sub>3</sub> and modified V-TiO<sub>2</sub>@β-In<sub>2</sub>S<sub>3</sub> were synthesized to develop bilayer systems to uphold charge transport via an effective and stable interface. Morphological studies revealed that β-In<sub>2</sub>S<sub>3</sub> was deposited homogeneously on V-TiO<sub>2</sub> as compared to unmodified TiO<sub>2</sub> nanorod arrays. X-ray photoelectron spectroscopy (XPS) and electron energy loss spectrometry studies verified the presence of various oxidation states of vanadium in rutile TiO<sub>2</sub> and the vanadium surface was utilized for broadening the charge collection centers in host substrate layer and hole quencher window. Subsequently, X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectra confirmed the rutile phases of TiO<sub>2</sub> and modified V-TiO<sub>2</sub> along with the phases of crystalline β-In<sub>2</sub>S<sub>3</sub>. XPS valence band study explored the interaction of valence band quazi Fermi levels of β-In<sub>2</sub>S<sub>3</sub> with the conduction band quazi Fermi levels of modified V-TiO<sub>2</sub> for enhanced charge collection at the interface. Photoelectrochemical studies show that the photocurrent density of V-TiO<sub>2</sub>@β-In<sub>2</sub>S<sub>3</sub> is 1.42 mA/cm<sup>2</sup> (1.5AM illumination). Also, the frequency window for TiO<sub>2</sub> was broadened by the vanadium modification in rutile TiO<sub>2</sub> nanorod arrays, and the lifetime of the charge carrier and stability of the interface in V-TiO<sub>2</sub>@β-In<sub>2</sub>S<sub>3</sub> were enhanced compared to the unmodified TiO<sub>2</sub>@β-In<sub>2</sub>S<sub>3</sub>. These findings highlight the significance of modifications in host substrates and interfaces, which have profound implications on interphase stability, photocatalysis and solar-fuel-based devices
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