Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions

The bias dependence of the tunnel magnetoresistance (TMR) of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the non-equilibrium Green's functions method with density functional theory. At voltages smaller than 20 mVolt the I-V characteristics and the TMR are dominated by resonant transport through narrow interface states in the minority spin-band. In the parallel configuration this contribution is quenched by a voltage comparable to the energy width of the interface state, whereas it persists at all voltages in the anti-parallel configuration. At higher bias the transport is mainly determined by the relative positions of the $\Delta_1$ band-edges in the two Fe electrodes, which causes a decrease of the TMR

Interaction of spherical nanoparticles with a highly focused beam of light

The interaction of a highly focused beam of light with spherical nanoparticles is investigated for linear and radial polarizations. An analytical solution is obtained to calculate this interaction. The Richards-Wolf theory is used to express the incident electric field near the focus of an aplanatic lens. The incident beam is expressed as an integral where the integrand is separated into transverse-electric (TE) and transverse-magnetic (TM) waves. The interaction of each TE and TM wave with a spherical nanoparticle is calculated using the Mie theory. The resulting analytical solution is then obtained by integrating the scattered waves over the entire angular spectrum. A finite element method solution is also obtained for comparison

Role of Coulomb correlation on magnetic and transport properties of doped manganites: La0.5Sr0.5MnO3 and LaSr2Mn2O7

Results of LSDA and LSDA+U calculations of the electronic structure and magnetic configurations of the 50% hole-doped pseudocubic perovskite La0.5Sr0.5MnO3 and double layered LaSr2Mn2O7 are presented. We demonstrate that the on-site Coulomb correlation (U) of Mn d electrons has a very different influence on the (i) band formations, (ii) magnetic ground states, (iii) interlayer exchange interactions, and (iv) anisotropy of the electrical transport in these two manganites. A possible reason why the LSDA failures in predicting observed magnetic and transport properties of the double layered compound - in contrast to the doped perovskite manganite - is considered on the basis of a p-d hybridization analysis.Comment: 11 pages, 3 figure

Interface characterization of Co2MnGe/Rh2CuSn Heusler multilayers

All-Heusler multilayer structures have been investigated by means of high kinetic x-ray photoelectron spectroscopy and x-ray magnetic circular dichroism, aiming to address the amount of disorder and interface diffusion induced by annealing of the multilayer structure. The studied multilayers consist of ferromagnetic Co$_2$MnGe and non-magnetic Rh$_2$CuSn layers with varying thicknesses. We find that diffusion begins already at comparably low temperatures between 200 $^{\circ}$C and 250 $^{\circ}$C, where Mn appears to be most prone to diffusion. We also find evidence for a 4 {\AA} thick magnetically dead layer that, together with the identified interlayer diffusion, are likely reasons for the small magnetoresistance found for current-perpendicular-to-plane giant magneto-resistance devices based on this all-Heusler system