Ordering of Ge quantum dots on silicon surfaces via bottom-up and top-down approaches

The nanoscale ordering of inorganic semiconductor quantum dots (QDs) is crucial to obtain reliable structures for novel nanotechnological applications such as nanomemories, nanolasers and nanoelectronic devices. We have directly grown Ge QDs by physical vapour deposition (PVD) on Si(111), Si(100) and some of its vicinal surfaces and studied innovative bottom up techniques to order such nanostructures. Specifically, we harnessed naturally occurring instabilities due to reconstruction and intrinsic anisotropic diffusion in Si bare surfaces, such as step bunching and natural steps occurring in silicon vicinal surfaces, to order the QDs both in one dimension and in the plane. We have also shown the use of controlled quantities of surfactants, like Sb, dramatically improves the desired ordering. Moreover, we have assisted these self-assembling processes using top-down approaches like Focused Ion Beam (FIB) milling and STM nanoindentation to control the nucleation sites and the density of the Ge QDs. Real-time study of growth and self-assembly has been accomplished using Scanning Tunneling Microscopy imaging in UHV. An explanation of the occurring processes is given, and a software routine is used to quantify the ordering of the QDs both in pre-patterned and bare surfaces. Applications, mainly in the field of Nanocrystal Nonvolatile Memories, are discussed

Synthesis and characterization of WS2/graphene/SiC van der Waals heterostructures via WO3−x thin film sulfurization

Van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs) and graphene have attracted keen scientific interest due to the complementary properties of the materials, which have wide reaching technological applications. Direct growth of uniform, large area TMDs on graphene substrates by chemical vapor deposition (CVD) is limited by slow lateral growth rates, which result in a tendency for non-uniform multilayer growth. In this work, monolayer and few-layer WS2 was grown on epitaxial graphene on SiC by sulfurization of WO3−x thin films deposited directly onto the substrate. Using this method, WS2 growth was achieved at temperatures as low as 700 °C – significantly less than the temperature required for conventional CVD. Achieving long-range uniformity remains a challenge, but this process could provide a route to synthesize a broad range of TMD/graphene van der Waals heterostructures with novel properties and functionality not accessible by conventional CVD growth

A study of the pair distribution function of self-organized Ge quantum dots

We explore the use of the pair distribution function to study the self-organization process of Gequantum dots on both nanopatterned and nonpatterned oxidized Si(001) surfaces.Dots formation and ordering upon annealing of a Ge thin film are analyzed. The method we use is not limited to this case study. We show how it can be applied to determine short and long range self-ordering of nanostructures. We support our results by applying a software routine to simulate patterns of dots to finally spot the relevant physical aspects of Ge islands self-assembly

Substrate-mediated growth of oriented, vertically aligned MoS2 nanosheets on vicinal and on-axis SiC substrates

The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS2) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the material growth to achieve the desired properties is the key to tailoring the material towards a specific application. In this work, we investigate the growth of vertically standing MoS2 nanosheets by chemical vapor deposition on vicinal and on-axis 4H-SiC (0001) substrates. In both cases the MoS2 flakes exhibit three preferred orientations, aligning with the substrate directions due to strain minimization of a MoO2 intermediate phase. Whereas MoS2 grown on vicinal SiC substrates exhibits strict near-vertical alignment, scanning electron microscopy and near-edge X-ray absorption fine structure (NEXAFS) measurements indicate a near-random vertical orientation when MoS2 is grown on on-axis SiC. Photoemission spectroscopy and NEXAFS measurements indicate the presence of defects and disordered edges which establish the suitability of the material for applications in sensing and catalysis

All‐Rounder Low‐Cost Dopant‐Free D‐A‐D Hole‐Transporting Materials for Efficient Indoor and Outdoor Performance of Perovskite Solar Cells

A novel biphenyl fumaronitrile as an acceptor and triphenylamine as donor conjugated building blocks are used for the first time to successfully synthesize donor–acceptor–donor molecule (D-A-D) 2,3-bis(4′-(bis(4-methoxyphenyl)amino)-[1,1′-biphenyl]-4-yl)fumaronitrile (TPA-BPFN-TPA). The new TPA-BPFN-TPA with low-lying HOMO is used as a dopant-free hole-transporting material (HTM) in mesoporous perovskite solar cells. The performance of the solar cells using this new HTM is compared with the traditional 2,2′,7,7′-tetrakis(N,N′-di-p-methoxyphenylamino)- 9,9′-spirobifluorene (Spiro-OMeTAD) HTM based devices for outdoor and indoor performance evaluation. Under 1 sun illumination, dopant-free TPA-BPFN-TPA HTM based devices exhibit a power conversion efficiency (PCE) of 18.4%, which is the record efficiency to date among D-A-D molecular design based dopant-free HTMs. Moreover, the stability of unencapsulated TPA-BPFN-TPA-based devices shows improvement over Spiro-OMeTAD-based devices in harsh relative humidity condition of 70%. Another exciting feature of the newly developed HTM is that the TPA-BPFN-TPA-based devices exhibit improved PCE of 30% and 20.1% at 1000 lux and 200 lux illuminations, respectively. This new finding provides a solution to fabricate low indoor (low light) and outdoor (1 sun) perovskite solar cell devices with high efficiency for cutting-edge energy harvesting technology.</p

SARS-CoV-2 multi-variant rapid detector based on graphene transistor functionalized with an engineered dimeric ACE2 receptor

Reliable point-of-care (POC) rapid tests are crucial to detect infection and contain the spread of Severe Acute Respiratory Syndrome Coronavirus 2 (SARS-CoV-2). The emergence of several variants of concern (VOC) can reduce binding affinity to diagnostic antibodies, limiting the efficacy of the currently adopted tests, while showing unaltered or increased affinity for the host receptor, angiotensin converting enzyme 2 (ACE2). We present a graphene field-effect transistor (gFET) biosensor design, which exploits the Spike-ACE2 interaction, the crucial step for SARS-CoV-2 infection. Extensive computational analyses show that a chimeric ACE2-Fragment crystallizable (ACE2-Fc) construct mimics the native receptor dimeric conformation. ACE2-Fc functionalized gFET allows in vitro detection of the trimeric Spike protein, outperforming functionalization with a diagnostic antibody or with the soluble ACE2 portion, resulting in a sensitivity of 20&nbsp;pg/mL. Our miniaturized POC biosensor successfully detects B.1.610 (pre-VOC), Alpha, Beta, Gamma, Delta, Omicron (i.e., BA.1, BA.2, BA.4, BA.5, BA.2.75 and BQ.1) variants in isolated viruses and patient's clinical nasopharyngeal swabs. The biosensor reached a Limit Of Detection (LOD) of 65&nbsp;cps/mL in swab specimens of Omicron BA.5. Our approach paves the way for a new and reusable class of highly sensitive, rapid and variant-robust SARS-CoV-2 detection systems

Nanostructures for sensors, electronics, energy and environment [Editorial]

Nanoscale science is growing evermore important on a global scale and is widely seen as playing an integral part in the growth of future world economies. The daunting energy crisis we are facing could be solved not only by new and improved ways of getting energy directly from the sun, but also by saving power thanks to advancements in electronics and sensors. New, cheap dye-sensitized and polymer solar cells hold the promise of environmentally friendly and simple production methods, along with mechanical flexibility and low weight, matching the conditions for a widespread deployment of this technology. Cheap sensors based on nanomaterials can make a fundamental contribution to the reduction of greenhouse gas emissions, allowing the creation of large sensor networks to monitor countries and cities, improving our quality of life. Nanowires and nano-platelets of metal oxides are at the forefront of the research to improve sensitivity and reduce the power consumption in gas sensors. Nanoelectronics is the next step in the electronic roadmap, with many devices currently in production already containing components smaller than 100 nm. Molecules and conducting polymers are at the forefront of this research with the goal of reducing component size through the use of cheap and environmentally friendly production methods. This, and the coming steps that will eventually bring the individual circuit element close to the ultimate limit of the atomic level, are expected to deliver better devices with reduced power consumption