Electron energy relaxation in disordered superconducting NbN films

We report onthe energy relaxation of electrons studied by means of magnetoconductance and photoresponse in a series of superconducting NbN film with thickness in the range from 3 to 33 nm. The inelastic scattering rate of electrons on phonons obeys Tntemperature dependence where the exponent is in the range ????≈3.2÷3.8and shows no systematically dependence on the degree of disorder. At 11K electron-phonon scattering times are in the range11.9 -17.5 ps.We show that in the studied NbN films the Debye temperature and the densityof phononstatesare both reduced with respect to bulk material. In the thinnest studied films reduced density of states along with the phonon trapping slowsdown the energy relaxationofelectrons by afactor of 4 as compared to the prediction of the tree dimensional phonon mode

Electron energy relaxation in disordered superconducting NbN films

We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product q_Tl(q_T is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14-30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/\tau_{e-ph} \sim T^n with the exponents n = 3.2-3.8. We found that in this temperature range \tau_{e-ph} and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9-17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material.Comment: 23 pages, 6 figure

Electron energy relaxation in disordered superconducting NbN films

We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material