Tuning Yu-Shiba-Rusinov States in a Quantum Dot

We present transport spectroscopy of sub-gap states in a bottom gated InAs nanowire coupled to a normal lead and a superconducting aluminium lead. The device shows clearly resolved sub-gap states which we can track as the coupling parameters of the system are tuned and as the gap is closed by means of a magnetic field. We systematically extract system parameters by using numerical renormalization group theory fits as a level of the quantum dot is tuned through a quantum phase transition electrostatically and magnetically. We also give an intuitive description of sub-gap excitations.Comment: 9 pages, 10 figure

Fast Characterization of Moving Samples with Nano-Textured Surfaces

We characterize nano-textured surfaces by optical diffraction techniques using an adapted commercial light microscope with two detectors, a CCD camera and a spectrometer. The acquisition and analyzing time for the topological parameters height, width, and sidewall angle is only a few milliseconds of a grating. We demonstrate that the microscope has a resolution in the nanometer range, also in an environment with many vibrations, such as a machine floor. Furthermore, we demonstrate an easy method to find the area of interest with the integrated CCD camera.Comment: 19 pages, 4 figure

Advances in the theory of III-V Nanowire Growth Dynamics

Nanowire (NW) crystal growth via the vapour_liquid_solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III_V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.Comment: 63 pages, 25 figures and 4 tables. Some details are explained more carefully in this version aswell as a new figure is added illustrating various facets of a WZ crysta