Threshold voltage and space charge in organic transistors

We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift is due to space-charge transferred from the contacts, and can be modeled quantitatively without free fitting parameters, using Poisson's equation, and by assuming that the density of states in rubrene is that of a conventional inorganic semiconductor. Our results demonstrate the consistency, at the quantitative level, of a variety of recent experiments on rubrene crystals, and show how the use of FET measurements can enable the determination of microscopic parameters (e.g., the effective mass of charge carriers).Comment: 4 pages, 4 figure

Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped Metal-Phthalocyanine compounds

We have performed a comparative study of the electronic properties of six different electron-doped metal phthalocyanine (MPc) compounds (ZnPc, CuPc, NiPc, CoPc, FePc, and MnPc), in which the electron density is controlled by means of potassium intercalation. In spite of the complexity of these systems, we find that the nature of the underlying molecular orbitals produce observable effects in the doping dependence of the electrical conductivity of the materials. For all the MPc's in which the added electrons are expected to occupy orbitals centered on the ligands (ZnPc, CuPc, and NiPc), the doping dependence of the conductivity has an essentially identical shape. This shape is different from that observed in MPc materials in which electrons are also added to orbitals centered on the metal atom (CoPc, FePc, and MnPc). The observed relation between the macroscopic electronic properties of the MPc compounds and the properties of the molecular orbitals of the constituent molecules, clearly indicates the richness of the alkali-doped metal-phthalocyanines as a model class of compounds for the investigation of the electronic properties of molecular systems

Sample-specific and Ensemble-averaged Magnetoconductance of Individual Single-Wall Carbon Nanotubes

We discuss magnetotransport measurements on individual single-wall carbon nanotubes with low contact resistance, performed as a function of temperature and gate voltage. We find that the application of a magnetic field perpendicular to the tube axis results in a large magnetoconductance of the order of e^2/h at low temperature. We demonstrate that this magnetoconductance consists of a sample-specific and of an ensemble-averaged contribution, both of which decrease with increasing temperature. The observed behavior resembles very closely the behavior of more conventional multi-channel mesoscopic wires, exhibiting universal conductance fluctuations and weak localization. A theoretical analysis of our experiments will enable to reach a deeper understanding of phase-coherent one-dimensional electronic motion in SWNTs.Comment: Replaced with published version. Minor changes in tex

High-performance nn-type organic field-effect transistors with ionic liquid gates

High-performance $n$-type organic field-effect transistors were developed with ionic-liquid gates and N,N$^"$-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these devices reproducibly operate in ambient atmosphere with negligible gate threshold voltage and mobility values as high as 5.0 cm$^2$/Vs. These mobility values are essentially identical to those measured in the same devices without the ionic liquid, using vacuum or air as the gate dielectric. Our results indicate that the ionic-liquid and $n$-type organic semiconductor interfaces are suitable to realize high-quality $n$-type organic transistors operating at small gate voltage, without sacrificing electron mobility

Double-gated graphene-based devices

We discuss transport through double gated single and few layer graphene devices. This kind of device configuration has been used to investigate the modulation of the energy band structure through the application of an external perpendicular electric field, a unique property of few layer graphene systems. Here we discuss technological details that are important for the fabrication of top gated structures, based on electron-gun evaporation of SiO$_2$. We perform a statistical study that demonstrates how --contrary to expectations-- the breakdown field of electron-gun evaporated thin SiO$_2$ films is comparable to that of thermally grown oxide layers. We find that a high breakdown field can be achieved in evaporated SiO$_2$ only if the oxide deposition is directly followed by the metallization of the top electrodes, without exposure to air of the SiO$_2$ layer.Comment: Replaced with revised version. To appear on New Journal of Physic

Photon-assisted electron transport in graphene

Photon-assisted electron transport in ballistic graphene is analyzed using scattering theory. We show that the presence of an ac signal (applied to a gate electrode in a region of the system) has interesting consequences on electron transport in graphene, where the low energy dynamics is described by the Dirac equation. In particular, such a setup describes a feasible way to probe energy dependent transmission in graphene. This is of substantial interest because the energy dependence of transmission in mesoscopic graphene is the basis of many peculiar transport phenomena proposed in the recent literature. Furthermore, we discuss the relevance of our analysis of ac transport in graphene to the observability of zitterbewegung of electrons that behave as relativistic particles (but with a lower effective speed of light).Comment: 5 pages, 2 figure