Strong Hall voltage modulation in hybrid ferromagnet/semiconductor microstructures

We present a new magnetoelectronic device consisting of a µm-scale semiconductor cross junction and a patterned, electrically isolated, ferromagnetic overlayer with in-plane magnetization. The large local magnetic field emanating from the edge of the thin ferromagnetic film has a strong perpendicular magnetic component, B[perpendicular](r), which induces a Hall resistance, RH, in the microjunction. External application of a weak in-plane magnetic field reverses the magnetization of the ferromagnet and with it B[perpendicular](r), thus modulating RH. Our data demonstrate that this strong "local" Hall effect is operative at both cryogenic and room temperatures, and is promising for device applications such as field sensors or integrated nonvolatile memory cells

Magnetoelectronic Phenomena at a Ferromagnet-Semiconductor Interface

A Comment on the Letter by P. R. Hammar et al., Phys. Rev. Lett. 83, 203 (1999)

The transfer matrix: a geometrical perspective

We present a comprehensive and self-contained discussion of the use of the transfer matrix to study propagation in one-dimensional lossless systems, including a variety of examples, such as superlattices, photonic crystals, and optical resonators. In all these cases, the transfer matrix has the same algebraic properties as the Lorentz group in a (2+1)-dimensional spacetime, as well as the group of unimodular real matrices underlying the structure of the abcd law, which explains many subtle details. We elaborate on the geometrical interpretation of the transfer-matrix action as a mapping on the unit disk and apply a simple trace criterion to classify the systems into three types with very different geometrical and physical properties. This approach is applied to some practical examples and, in particular, an alternative framework to deal with periodic (and quasiperiodic) systems is proposed.Comment: 50 pages, 24 figure

Spin Injection in a Ballistic Two-Dimensional Electron Gas

We explore electrically injected, spin polarized transport in a ballistic two-dimensional electron gas. We augment the Buettiker-Landauer picture with a simple, but realistic model for spin-selective contacts to describe multimode reservoir-to-reservoir transport of ballistic spin 1/2 particles. Clear and unambiguous signatures of spin transport are established in this regime, for the simplest measurement configuration that demonstrates them directly. These new effects originate from spin precession of ballistic carriers; they exhibit strong dependence upon device geometry and vanish in the diffusive limit. Our results have important implications for prospective ``spin transistor'' devices.Comment: Submitted to Phys. Rev. Let

Co-ordination between Rashba spin-orbital interaction and space charge effect and enhanced spin injection into semiconductors

We consider the effect of the Rashba spin-orbital interaction and space charge in a ferromagnet-insulator/semiconductor/insulator-ferromagnet junction where the spin current is severely affected by the doping, band structure and charge screening in the semiconductor. In diffusion region, if the the resistance of the tunneling barriers is comparable to the semiconductor resistance, the magnetoresistance of this junction can be greatly enhanced under appropriate doping by the co-ordination between the Rashba effect and screened Coulomb interaction in the nonequilibrium transport processes within Hartree approximation.Comment: 4 pages, 3 figure

Quantum Dot as Spin Filter and Spin Memory

We consider a quantum dot in the Coulomb blockade regime weakly coupled to current leads and show that in the presence of a magnetic field the dot acts as an efficient spin-filter (at the single-spin level) which produces a spin-polarized current. Conversely, if the leads are fully spin-polarized the up or down state of the spin on the dot results in a large sequential or small cotunneling current, and thus, together with ESR techniques, the setup can be operated as a single-spin memory.Comment: 4 pages, 3 figures, REVTe