Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires

The growth of semiconductor (SC) nanowires (NW) by CVD using Au-catalyzed VLS process has been widely studied over the past few years. Among others SC, it is possible to grow pure Si or SiGe NW thanks to these techniques. Nevertheless, Au could deteriorate the electric properties of SC and the use of other metal catalysts will be mandatory if NW are to be designed for innovating electronic. First, this article's focus will be on SiGe NW's growth using Au catalyst. The authors managed to grow SiGe NW between 350 and 400°C. Ge concentration (x) in Si1-xGex NW has been successfully varied by modifying the gas flow ratio: R = GeH4/(SiH4 + GeH4). Characterization (by Raman spectroscopy and XRD) revealed concentrations varying from 0.2 to 0.46 on NW grown at 375°C, with R varying from 0.05 to 0.15. Second, the results of Si NW growths by CVD using alternatives catalysts such as platinum-, palladium- and nickel-silicides are presented. This study, carried out on a LPCVD furnace, aimed at defining Si NW growth conditions when using such catalysts. Since the growth temperatures investigated are lower than the eutectic temperatures of these Si-metal alloys, VSS growth is expected and observed. Different temperatures and HCl flow rates have been tested with the aim of minimizing 2D growth which induces an important tapering of the NW. Finally, mechanical characterization of single NW has been carried out using an AFM method developed at the LTM. It consists in measuring the deflection of an AFM tip while performing approach-retract curves at various positions along the length of a cantilevered NW. This approach allows the measurement of as-grown single NW's Young modulus and spring constant, and alleviates uncertainties inherent in single point measurement

Multifunctional Oxyde Nanodevices (invited)

International audienc

Ionic screening effect on low-frequency drain current fluctuations in liquid-gated nanowire FETs

International audienceThe ionic screening effect plays an important role in determining the fundamental surface properties within liquid–semiconductor interfaces. In this study, we investigated the characteristics of low-frequency drain current noise in liquid-gated nanowire (NW) field effect transistors (FETs) to obtain physical insight into the effect of ionic screening on low-frequency current fluctuation. When the NW FET was operated close to the gate voltage corresponding to the maximum transconductance, the magnitude of the low-frequency noise for the NW exposed to a low-ionic-strength buffer (0.001 M) was approximately 70% greater than that when exposed to a high-ionic-strength buffer (0.1 M). We propose a noise model, considering the charge coupling efficiency associated with the screening competition between the electrolyte buffer and the NW, to describe the ionic screening effect on the low-frequency drain current noise in liquid-gated NW FET systems. This report not only provides a physical understanding of the ionic screening effect behind the low-frequency current noise in liquid-gated FETs but also offers useful information for developing the technology of NW FETs with liquid-gated architectures for application in bioelectronics, nanosensors, and hybrid nanoelectronics

Scaling prospects in mechanical energy harvesting with piezo nanowires

The combination of 3D processing technologies, low power circuits and new materials integration makes it conceivable to build autonomous integrated systems, which would harvest their energy from the environment. In this paper, we focus on mechanical energy harvesting and discuss its scaling prospects toward the use of piezoelectric nanostructures, able to be integrated in a CMOS environment. It is shown that direct scaling of present MEMS-based methodologies would be beneficial for high-frequency applications only. For the range of applications which is presently foreseen, a different approach is needed, based on energy harvesting from direct real-time deformation instead of energy harvesting from vibration modes at or close to resonance. We discuss the prospects of such an approach based on simple scaling rule

Nanowire-based piezoelectric transducers

session R10 Energy Conversion and storage V (R10.02 invited)International audienc

Semiconductor piezoelectric nanowires for mechanical energy harvesters and sensors (invited)

International audienc

Semiconductor Piezoelectric Nanowires for Energy Transduction Applications

oralInternational audienc

Modelling of vertical-nanowire based devices for mechanical/electrical transduction

International audienc

Progress on the modelling of piezoelectric nanogenerators

session : Nanogenerators (Invited)International audienc

ZnO nanowires and thin films for enregy harvesting applications

session posterNational audienc