148 research outputs found
Two Quantum Photoemission in Semiconductors
Two-quantum photoemission is a process in which two times the photon energy is transferred to the photoelectron. In this process, the photoelectron observed in the vacuum keeps a memory of the intermediate empty state by which it transited after its first excitation, and before its second excitation and its final escape. We discuss here the experimental problems involved and the information obtained in the case of the semiconductors Si and InP. We show that ballistic or non-ballistic electrons can be selected by an adequate choice of experimental conditions, yielding information on both the static and dynamic properties of the empty states
Theory of Non-equilibrium Single Electron Dynamics in STM Imaging of Dangling Bonds on a Hydrogenated Silicon Surface
During fabrication and scanning-tunneling-microscope (STM) imaging of
dangling bonds (DBs) on a hydrogenated silicon surface, we consistently
observed halo-like features around isolated DBs for specific imaging
conditions. These surround individual or small groups of DBs, have abnormally
sharp edges, and cannot be explained by conventional STM theory. Here we
investigate the nature of these features by a comprehensive 3-dimensional model
of elastic and inelastic charge transfer in the vicinity of a DB. Our essential
finding is that non-equilibrium current through the localized electronic state
of a DB determines the charging state of the DB. This localized charge distorts
the electronic bands of the silicon sample, which in turn affects the STM
current in that vicinity causing the halo effect. The influence of various
imaging conditions and characteristics of the sample on STM images of DBs is
also investigated.Comment: 33 pages, 9 figure
Effect of deconfinement on resonant transport in quantum wires
The effect of deconfinement due to finite band offsets on transport through
quantum wires with two constrictions is investigated. It is shown that the
increase in resonance linewidth becomes increasingly important as the size is
reduced and ultimately places an upper limit on the energy (temperature) scale
for which resonances may be observed.Comment: 6 pages, 6 postscript files with figures; uses REVTe
Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy
We study the energetics of island formation in Stranski-Krastanow growth
within a parameter-free approach. It is shown that an optimum island size
exists for a given coverage and island density if changes in the wetting layer
morphology after the 3D transition are properly taken into account. Our
approach reproduces well the experimental island size dependence on coverage,
and indicates that the critical layer thickness depends on growth conditions.
The present study provides a new explanation for the (frequently found) rather
narrow size distribution of self-assembled coherent islands.Comment: 4 pages, 5 figures, In print, Phys. Rev. Lett. Other related
publications can be found at http://www.fhi-berlin.mpg.de/th/paper.htm
The influence of surface stress on the equilibrium shape of strained quantum dots
The equilibrium shapes of InAs quantum dots (i.e., dislocation-free, strained
islands with sizes >= 10,000 atoms) grown on a GaAs (001) substrate are studied
using a hybrid approach which combines density functional theory (DFT)
calculations of microscopic parameters, surface energies, and surface stresses
with elasticity theory for the long-range strain fields and strain relaxations.
In particular we report DFT calculations of the surface stresses and analyze
the influence of the strain on the surface energies of the various facets of
the quantum dot. The surface stresses have been neglected in previous studies.
Furthermore, the influence of edge energies on the island shapes is briefly
discussed. From the knowledge of the equilibrium shape of these islands, we
address the question whether experimentally observed quantum dots correspond to
thermal equilibrium structures or if they are a result of the growth kinetics.Comment: 7 pages, 8 figures, submitted to Phys. Rev. B (February 2, 1998).
Other related publications can be found at
http://www.rz-berlin.mpg.de/th/paper.htm
Self-assembly of quantum dots: effect of neighbor islands on the wetting in coherent Stranski-Krastanov growth
The wetting of the homogeneously strained wetting layer by dislocation-free
three-dimensional islands belonging to an array has been studied. The array has
been simulated as a chain of islands in 1+1 dimensions. It is found that the
wetting depends on the density of the array, the size distribution and the
shape of the neighbor islands. Implications for the self-assembly of quantum
dots grown in the coherent Stranski-Krastanov mode are discussed.Comment: 4 pages, 6 figures, accepted version, minor change
Effect of strain on surface diffusion in semiconductor heteroepitaxy
We present a first-principles analysis of the strain renormalization of the
cation diffusivity on the GaAs(001) surface. For the example of
In/GaAs(001)-c(4x4) it is shown that the binding of In is increased when the
substrate lattice is expanded. The diffusion barrier \Delta E(e) has a
non-monotonic strain dependence with a maximum at compressive strain values (e
0) studied.
We discuss the consequences of spatial variations of both the binding energy
and the diffusion barrier of an adatom caused by the strain field around a
heteroepitaxial island. For a simplified geometry, we evaluate the speed of
growth of two coherently strained islands on the GaAs(001) surface and identify
a growth regime where island sizes tend to equalize during growth due to the
strain dependence of surface diffusion.Comment: 10 pages, 8 figures, LaTeX2e, to appear in Phys. Rev. B (2001). Other
related publications can be found at
http://www.rz-berlin.mpg.de/th/paper.htm
Electron density measurements of argon surface-wave discharges
The electron density of microwave-generated surface-wave discharges in argon have been measured using Stark broadening and calculated from the measured wavelengths of the standing surface wave. Results obtained from these two techniques compare well. The electron density varies from 10 13 to 10 14 /cm 3 for pressures ranging from 50 to 800 torr.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/45477/1/11090_2004_Article_BF00615124.pd
Equilibrium shapes and energies of coherent strained InP islands
The equilibrium shapes and energies of coherent strained InP islands grown on
GaP have been investigated with a hybrid approach that has been previously
applied to InAs islands on GaAs. This combines calculations of the surface
energies by density functional theory and the bulk deformation energies by
continuum elasticity theory. The calculated equilibrium shapes for different
chemical environments exhibit the {101}, {111}, {\=1\=1\=1} facets and a (001)
top surface. They compare quite well with recent atomic-force microscopy data.
Thus in the InP/GaInP-system a considerable equilibration of the individual
islands with respect to their shapes can be achieved. We discuss the
implications of our results for the Ostwald ripening of the coherent InP
islands. In addition we compare strain fields in uncapped and capped islands.Comment: 10 pages including 6 figures. Submitted to Phys. Rev. B. Related
publications can be found at http://www.fhi-berlin.mpg.de/th/paper.htm
Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots
We present an atomistic investigation of the influence of strain on the
electronic properties of quantum dots (QD's) within the empirical tight-binding (ETB) model with interactions up to 2nd nearest neighbors
and spin-orbit coupling. Results for the model system of capped pyramid-shaped
InAs QD's in GaAs, with supercells containing atoms are presented and
compared with previous empirical pseudopotential results. The good agreement
shows that ETB is a reliable alternative for an atomistic treatment. The strain
is incorporated through the atomistic valence force field model. The ETB
treatment allows for the effects of bond length and bond angle deviations from
the ideal InAs and GaAs zincblende structure to be selectively removed from the
electronic-structure calculation, giving quantitative information on the
importance of strain effects on the bound state energies and on the physical
origin of the spatial elongation of the wave functions. Effects of dot-dot
coupling have also been examined to determine the relative weight of both
strain field and wave function overlap.Comment: 22 pages, 7 figures, submitted to Phys. Rev. B (in press) In the
latest version, added Figs. 3 and 4, modified Fig. 5, Tables I and II,.and
added new reference
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