1 research outputs found
High-Sensitivity Light Detection via Gate Tuning of Organometallic Perovskite/PCBM Bulk Heterojunctions on Ferroelectric Pb<sub>0.92</sub>La<sub>0.08</sub>Zr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Gated Graphene Field Effect Transistors
Organometallic
perovskite (OMP) CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> doped
with [6,6]-phenyl-C<sub>61</sub>-butyric acid methyl ester (PCBM)
has been shown to form bulk heterojunction (OMP-PCBM BHJ) for improved
charge separation. In this work, the OMP-PCBM BHJ photosensitizer
is combined with graphene field effect transistors (GFETs) with a
ferroelectric Pb<sub>0.92</sub>La<sub>0.08</sub>Zr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> gate of high gating efficiency. A remarkable
gate tunability via shifting the Fermi energy of graphene with respect
to the valence band maximum and conduction band minimum of the OMP
was observed, which is critical for facilitating efficient charge
transfer across the OMP-PCBM BHJ/GFET interface. The combination of
the high-efficiency charge separation by BHJ and charge transfer by
high gate tunability leads to achievement of high photoresponsivity
up to 7 × 10<sup>6</sup> A/W and detectivity exceeding 7 ×
10<sup>12</sup> Jones at 550 nm at a small gate voltage of 1.0 V.
These results represent almost 2 orders of magnitude improvement over
that without a gate tuning under the similar experimental condition,
illustrating the importance of the interface electronic structure
in optimizing the optoelectronic performance of the OMP-PCBM BHJ/GFET
devices