Maxi dual axis solar tracker system

In this work, a maxi dual axis solar tracker is proposed. This tracker is used to track the sun path within a day and during a year. The tracking system is composed of two parts: mechanical and electrical parts. The mechanical part is composed of panel carrier, panel carrier rotator according to horizontal/vertical axis, two actuators. The electrical part is composed of light sensor, microcontroller, relays. The light sensor receives an artificial light and sends a potential difference as an analog signal to microcontroller. The microcontroller converts the analog signal into a digital signal using ADC and sends it to relays. The relays activate the two actuators to orient the maxi solar PV into the artificial light with the purpose to produce maximum energy

First-principles Study of Structural, Electronic and Optical Properties of III-arsenide Binary GaAs and InAs, and III-Nitrides Binary GaN and InN: Improved Density-functional-theory Study

We report results from first-principles density functional calculations using the full- potential linear augmented plane wave (FP-LAPW) method. For the exchange-correlation potential, local-density approximation (LDA) and generalized gradient approximation of Wu and Cohen (GGA-WC) have been used to calculate the structural, electronic properties of the zinc-blende GaAs, InAs, GaN and InN compounds. The alternative form of GGA proposed by Engel and Vosko (EV-GGA), and the modified Becke-Johnson exchange potential+LDA-correlation (MBJLDA) were also used for the electronic band structure and optical properties. The results obtained for structural, electronic and optical properties are compared with other computational work and experimental data. These compounds are direct band gap semiconductors, where the valence band maximum is located at the Gv point, and the conduction band minimum is located at the Gc point. In addition to that, detailed descriptions of the band structures, density of states and electronic charge densities were evaluated. The optical properties of these compounds, namely the real and the imaginary parts of the dielectric function, reflectivity and absorption coefficient were analyzed

Electronic and optical properties of GaInX2 (X=As, P) from first principles study

The structural, electronic and optical properties of GaInAs2 and GaInP2 with chalcopyrite structure in ternaries compounds have been studied in the present paper. To obtain accurate results, we have based our research on three phases. In the first phase, we used the first-principles calculations by using the full potential-linearized augmented plane wave method (FP-LAPW) within the density functional theory (DFT). In the second phase, the structural properties as exchange-correlation potential, the generalized gradient approximation (GGA-PBE Sol) of Perdew and al and local density approximation (LDA) of Perdew and Wang have been used. And in phase three, in order to get best values of the band gap, we used the developed form of GGA proposed by Engel–Vosko (EV-GGA) and the modified Becke-Johnson (mBJ) of Tran and Blaha, which are based on the optimization of total energy and corresponding potential. The compounds of GaInP2 and GaInAs2 demonstrate semiconducting behaviour with the direct-band gap of 0.3 and 2.03 eV using mBJ approach. The dielectric function, refractive index, reflectivity, absorption coefficient have been studied and the optical conductivity functions are calculated for radiation up to 20 eV. The obtained results indicate that GaInP2 and GaInAs2 are attractive materials for optoelectronic and photovoltaic applications

Electronic and optical properties of GaInX₂(X=As, P) from first principles study

181-189The structural, electronic and optical properties of GaInAs2 and GaInP2 with chalcopyrite structure in ternaries compounds have been studied in the present paper. To obtain accurate results, we have based our research on three phases. In the first phase, we used the first-principles calculations by using the full potential-linearized augmented plane wave method (FP-LAPW) within the density functional theory (DFT). In the second phase, the structural properties as exchange-correlation potential, the generalized gradient approximation (GGA-PBE Sol) of Perdew and al and local density approximation (LDA) of Perdew and Wang have been used. And in phase three, in order to get best values of the band gap, we used the developed form of GGA proposed by Engel–Vosko (EV-GGA) and the modified Becke-Johnson (mBJ) of Tran and Blaha, which are based on the optimization of total energy and corresponding potential. The compounds of GaInP2 and GaInAs2 demonstrate semiconducting behaviour with the direct-band gap of 0.3 and 2.03 eV using mBJ approach. The dielectric function, refractive index, reflectivity, absorption coefficient have been studied and the optical conductivity functions are calculated for radiation up to 20 eV. The obtained results indicate that GaInP2 and GaInAs2 are attractive materials for optoelectronic and photovoltaic applications