4 research outputs found

    Superradiance in GaSe Nanoparticle Aggregates

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    Photocatalytic activity of TiO2/SWCNT and TiO2/MWCNT nanocomposites with different carbon nanotube content

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    With different mass ratios, titanium dioxide/carbon nanotube (0.1-10 wt% CNTcontent) nanocomposites were prepared with the aid of ultrasonication method. The structures of the various TiO2/CNT nanocomposites were characterized by electron microscopy (scanning electron microscopy, transmission electron microscopy). Their photocatalytic activity was tested by the degradation of phenol in aqueous solution under near-UV irradiation. In parallel experiments, both (SW and MW) CNT samples were treated in a reflux system with nitric acid to functionalize the nanotubes, subsequently preparing the nanocomposites in the same method. At higher CNT concentration (5, 10 wt%) the nanocomposites exhibited lower photocatalytic activity compared to the samples with lower CNT concentration, probably because the higher CNT concentration reduces the light intensity on the surfaces of TiO2 particles. Our aim was to find the best synthesis method and the optimal composition of the TiO2/CNT nanocomposites for the degradation of phenol under UV irradiation. The highest degradation rate was achieved with Aldrich anatase/functionalized single wall carbon nanotube nanocomposite (AA+f-SW1 wt%). The photocatalytic activity of this sample was significantly higher compared to the bare Aldrich anatase and Aeroxide P25 titanium dioxide reference samples which were the best photocatalysts among the investigated bare titanias. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

    Exciton Dynamics in MoS2-Pentacene and WSe2-Pentacene Heterojunctions

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    We measured the exciton dynamics in van der Waals heterojunctions of transition metal dichalcogenides (TMDCs) and organic semiconductors (OSs). TMDCs and OSs are semiconducting materials with rich and highly diverse optical and electronic properties. Their heterostructures, exhibiting van der Waals bonding at their interfaces, can be utilized in the field of optoelectronics and photovoltaics. Two types of heterojunctions, MoS2-pentacene and WSe2-pentacene, were prepared by layer transfer of 20 nm pentacene thin films as well as MoS2and WSe2monolayer crystals onto Au surfaces. The samples were studied by means of transient absorption spectroscopy in the reflectance mode. We found that A-exciton decay by hole transfer from MoS2to pentacene occurs with a characteristic time of 21 ± 3 ps. This is slow compared to previously reported hole transfer times of 6.7 ps in MoS2-pentacene junctions formed by vapor deposition of pentacene molecules onto MoS2on SiO2. The B-exciton decay in WSe2shows faster hole transfer rates for WSe2-pentacene heterojunctions, with a characteristic time of 7 ± 1 ps. The A-exciton in WSe2also decays faster due to the presence of a pentacene overlayer; however, fitting the decay traces did not allow for the unambiguous assignment of the associated decay time. Our work provides important insights into excitonic dynamics in the growing field of TMDC-OS heterojunctions

    Exciton Dynamics in MoS<sub>2</sub>‑Pentacene and WSe<sub>2</sub>‑Pentacene Heterojunctions

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    We measured the exciton dynamics in van der Waals heterojunctions of transition metal dichalcogenides (TMDCs) and organic semiconductors (OSs). TMDCs and OSs are semiconducting materials with rich and highly diverse optical and electronic properties. Their heterostructures, exhibiting van der Waals bonding at their interfaces, can be utilized in the field of optoelectronics and photovoltaics. Two types of heterojunctions, MoS2-pentacene and WSe2-pentacene, were prepared by layer transfer of 20 nm pentacene thin films as well as MoS2 and WSe2 monolayer crystals onto Au surfaces. The samples were studied by means of transient absorption spectroscopy in the reflectance mode. We found that A-exciton decay by hole transfer from MoS2 to pentacene occurs with a characteristic time of 21 ± 3 ps. This is slow compared to previously reported hole transfer times of 6.7 ps in MoS2-pentacene junctions formed by vapor deposition of pentacene molecules onto MoS2 on SiO2. The B-exciton decay in WSe2 shows faster hole transfer rates for WSe2-pentacene heterojunctions, with a characteristic time of 7 ± 1 ps. The A-exciton in WSe2 also decays faster due to the presence of a pentacene overlayer; however, fitting the decay traces did not allow for the unambiguous assignment of the associated decay time. Our work provides important insights into excitonic dynamics in the growing field of TMDC-OS heterojunctions
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