Catalytic hydride vapour phase epitaxy growth of GaN nanowires

Catalytic growth of GaN nanowires by hydride vapour phase epitaxy is demonstrated. Nickel-gold was used as a catalyst. Nanowire growth was limited to areas patterned with catalyst. Characterization of the nanowires with transmission electron microscopy, x-ray diffraction, and low temperature photoluminescence shows that the nanowires are stoichiometric 2H-GaN single crystals growing in the [0001] orientation when grown on sapphire, with occasional stacking faults along the c-axis as the only defect type observed in most of the wires. A red shift observed in the photoluminescence was too large to be explained by the minor strain observed alone, and was only marginally affected by temperature, suggesting a superposition of several factors

Surface Modification Energized by Focused Ion Beam: The Influence of Etch Rates & Aspect Ratio on Ripple Wavelengths.

Ion beams have been used to modify surface topography, producing nanometer-scale modulations (and even subnanometer ripples in this work) that have potential uses ranging from designing self-assembly structures, to controlling stiction of micromachined surfaces, to providing imprint templates for patterned media. Modern computer-controlled Focused Ion Beam tools enable alternating submicron patterned zones of such ion-eroded surfaces, as well as dramatically increasing the rate of ion beam processing. The DualBeam FIB/SEM also expedites process development while minimizing the use of materials that may be precious (Diamond) and/or produce hazardous byproducts (Beryllium). A FIB engineer can prototype a 3-by-3-by-3 matrix of variables in tens of minutes and consume as little as zeptoliters of material; whereas traditional ion beam processing would require tens of days and tens of precious wafers. Saturation wavelengths have been reported for ripples on materials such as single crystal silicon or diamond ({approx}200nm); however this work achieves wavelengths >400nm on natural diamond. Conversely, Be can provide a stable and ordered 2-dimensional array of <40nm periodicity; and ripples <0.4nm are also fabricated on carbon surfaces and quantified by HR-TEM and electron diffraction. Rippling is a function of material, ion beam, and angle; but is also controlled by chemical environment, redeposition, and aspect ratio. Ideally a material exhibits a constant yield (atoms sputtered off per incident ion); however, pragmatic FIB processes, coupled with the direct metrological feedback in a DualBeam tool, reveal etch rates do not remain constant for nanometer-scale processing. Control of rippling requires controlled metrology, and robust software tools are developed to enhance metrology. In situ monitoring of the influence of aspect ratio and redeposition at the micron scale correlates to the rippling fundamentals that occur at the nanometer scale and are controlled by the boundary conditions of FIB processing

Fundamentals of Focused Ion Beam Nanostructural Processing: Below, At, and Above the Surface

This article considers the fundamentals of what happens in a solid when it is impacted by a medium-energy gallium ion. The study of the ion/sample interaction at the nanometer scale is applicable to most focused ion beam (FIB)–based work even if the FIB/sample interaction is only a step in the process, for example, micromachining or microelectronics device processing.Whereas the objective in other articles in this issue is to use the FIB tool to characterize a material or to machine a device or transmission electron microscopy sample, the goal of the FIB in this article is to have the FIB/sample interaction itself become the product.To that end, the FIB/sample interaction is considered in three categories according to geometry:below, at, and above the surface. First, the FIB ions can penetrate the top atom layer(s) and interact below the surface. Ion implantation and ion damage on flat surfaces have been comprehensively examined; however, FIB applications require the further investigation of high doses in three-dimensional profiles.Second, the ions can interact at the surface, where a morphological instability can lead to ripples and surface self-organization, which can depend on boundary conditions for site-specific and compound FIB processing. Third, the FIB may interact above the surface (and/or produce secondary particles that interact above the surface).Such ion beam–assisted deposition, FIB–CVD (chemical vapor deposition), offers an elaborate complexity in three dimensions with an FIB using a gas injection system. At the nanometer scale, these three regimes—below, at, and above the surface—can require an interdependent understanding to be judiciously controlled by the FIB.Engineering and Applied Science

Ion Beam Induced Surface Modulations from Nano to Pico: Optimizing Deposition During Erosion and Erosion During Deposition.

Ion beams of sufficient energy to erode a surface can lead to surface modulations that depend on the ion beam, the material surface it impinges, and extrinsic parameters such as temperature and geometric boundary conditions. Focused Ion Beam technology both enables site-specific placement of these modulations and expedites research through fast, high dose and small efficient use of material. The DualBeam (FIB/SEM) enables in situ metrology, with movies observing ripple formation, wave motion, and the influence of line defects. Nanostructures (ripples of >400nm wavelength to dots spaced <40nm) naturally grow from atomically flat surfaces during erosion, however, a steady state size may or may not be achieved as a consequence of numerous controlled parameters: temperature, angle, energy, crystallography. Geometric factors, which can be easily invoked using a FIB, enable a controlled component of deposition (and/or redeposition) to occur during erosion, and conversely allow a component of etching to be incurred during (ion-beam assisted) deposition. High angles of ion beam inclination commonly lead to 'rougher' surfaces, however, the extreme case of 90.0{sup o} etching enables deposition of organized structures 1000 times smaller than the aforementioned, video-recorded nanostructures. Orientation and position of these picostructures (naturally quantized by their atomic spacings) may be controlled by the same parameters as for nanostructures (e.g. ion inclination and imposed boundary conditions, which are flexibly regulated by FIB). Judicious control of angles during FIB-CVD growth stimulates erosion with directionality that produces surface modulations akin to those observed for sputtering. Just as a diamond surface roughens from 1-D ripples to 2-D steps with increasing angle of ion sputtering, so do ripples and steps appear on carbon-grown surfaces with increase in angle of FIB-CVD. Ion beam processing has been a stalwart of the microelectronics industry, is now a vital tool for research of self-organizing nanostructures, and promises to be a focus for future picotechnology

The Effect of Excess Carbon on the Crystallographic, Microstructural, and Mechanical Properties of CVD Silicon Carbide Fibers

Silicon carbide (SiC) fibers made by chemical vapor deposition (CVD) are of interest for organic, ceramic, and metal matrix composite materials due their high strength, high elastic modulus, and retention of mechanical properties at elevated processing and operating temperatures. The properties of SCS-6{trademark} silicon carbide fibers, which are made by a commercial process and consist largely of stoichiometric SiC, were compared with an experimental carbon-rich CVD SiC fiber, to which excess carbon was added during the CVD process. The concentration, homogeneity, and distribution of carbon were measured using energy dispersive x-ray spectroscopy (SEM/EDS). The effect of excess carbon on the tensile strength, elastic modulus, and the crystallographic and microstructural properties of CVD silicon carbide fibers was investigated using tensile testing, x-ray diffraction, scanning electron microscopy (SEM), and transmission electron microscopy (TEM)

Comparative experimental study of x-ray absorption spectroscopy and electron energy loss spectroscopy on passivated U surfaces

X-ray absorption spectroscopy and electron energy loss spectroscopy are complementary analytical techniques on energy and spatial resolution. These techniques are based on the same fundamental physical process of core excitation with either an incident photon or incident electron. In the proper experimental configuration the electron and photon inelastic scattering amplitudes are comparable and thus the x-ray and electron absorption edges look identical. We have applied these two complementary analytical techniques to investigate the electronic structure of C ion implanted U. Implantation of C{sup +} ions into U{sup 238} has been shown to produce a physically and chemically modified surface layer that passivates the surface preventing further air oxidation and corrosion. Comparison of the resultant spectra reveal that transitions between the initial state and a series of final states yield numerous strong features at the absorption edge that can provide structural information and information on the local chemical environment, including the character of the U 5f state

Electron Beam-induced Light Emission and Transport in GaN Nanowires

We report observations of electron beam-induced light from GaN nanowires grown by chemical vapor deposition. GaN nanowires were modified in-situ with deposited opaque platinum coatings to estimate the extent to which light is channeled to the ends of nanowires. Some evidence of light channeling was found, but wire microstructure and defects play an important role in light scattering and transport, limiting the extent to which light is confined. Optical interconnects are powerful components presently applied for high bandwidth communications among high-performance processors. Future circuits based on nanometer-scale components could similarly benefit from optical information transfer among processing blocks. Strong light channeling (and even lasing) has been observed in GaN nanowires, suggesting that these structures could be useful building blocks in a future networked electro-optical processor. However, the extent to which defects and microstructure control optical performance in nanowire waveguides has not been measured. In this study, we use electron microscopy and in-situ modification of individual nanowires to begin to correlate wire structure with light transport efficiency through GaN nanowires tens of microns long

MICROSTRUCTURE AND PROPERTIES OF IN SITU TOUGHENED SILICON CARBIDE

A silicon carbide with a fracture toughness as high as 9.1 MPa.m1/2 has been developed by hot pressing b-SiC powder with aluminum, boron, and carbon additions (ABC-SiC). Central in this material development has been systematic transmission electron microscopy (TEM) and mechanical characterizations. In particular, atomic-resolution electron microscopy and nanoprobe composition quantification were combined in analyzing grain boundary structure and nanoscale structural features