Electromagnetically induced transparency in inhomogeneously broadened Lambda-transition with multiple excited levels

Electromagnetically induced transparency (EIT) has mainly been modelled for three-level systems. In particular, a considerable interest has been dedicated to the Lambda-configuration, with two ground states and one excited state. However, in the alkali-metal atoms, which are commonly used, hyperfine interaction in the excited state introduces several levels which simultaneously participate in the scattering process. When the Doppler broadening is comparable with the hyperfine splitting in the upper state, the three-level Lambda model does not reproduce the experimental results. Here we theoretically investigate the EIT in a hot vapor of alkali-metal atoms and demonstrate that it can be strongly reduced due to the presence of multiple excited levels. Given this model, we also show that a well-designed optical pumping enables to significantly recover the transparency

Quantum memory for light via stimulated off-resonant Raman process: beyond the three-level Lambda-scheme approximation

We consider a quantum memory scheme based on the conversion of a signal pulse into a long-lived spin coherence via stimulated off-resonant Raman process. For a storing medium consisting of alkali atoms, we have calculated the Autler-Townes resonance structure created by a strong control field. By taking into account the upper hyperfine states of the D1 optical transition, we show important deviations from the predictions of the usual three-level Lambda-scheme approximation and we demonstrate an enhancement of the process for particular detunings of the control. We estimate the memory efficiency one can obtain using this configuration.Comment: 8 pages, 6 figure

Optical second harmonic generation probe of two-dimensional ferroelectricity

Optical second harmonic generation (SHG) is used as a noninvasive probe of two-dimensional (2D) ferroelectricity in Langmuir-Blodgett (LB) films of copolymer vinylidene fluoride with trifluorethylene. The surface 2D ferroelectric-paraelectric phase transition in the topmost layer of LB films and a thickness independent (almost 2D) transition in the bulk of these films are observed in temperature studies of SHG.Comment: 9 pages, 2 figures, Optics Letters, in prin

Experimental investigation of the transition between Autler-Townes splitting and electromagnetically-induced-transparency models

Two phenomena can affect the transmission of a probe field through an absorbing medium in the presence of an additional field: electromagnetically induced transparency (EIT) and Autler-Townes splitting (ATS). Being able to discriminate between the two i

Introducing Quantum Technologies at Secondary School Level: Challenges and Potential Impact of an Online Extracurricular Course

Stimulated by the European project “QTEdu CSA”, within the flagship “Quantum Technologies”, a community of researchers active in the fields of quantum technologies and physics education has designed and implemented an extracurricular course on quantum physics concepts and quantum technologies applications for high school. The course, which featured eight interactive lectures, was organized online between March and May 2021 and attended by about 250 students from all over Italy. In this paper, we describe the main tenets and activities of the course. Moreover, we report on the effectiveness of the course on students’ knowledge of the basic concepts of quantum physics and students’ views about epistemic aspects and applications of quantum technologies. Results show that the designed activities were effective in improving students’ knowledge about fundamental aspects of quantum mechanics and familiarizing them with quantum technology applications

DC-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy of Si(001)-SiO2_2 interfaces

The mechanism of DC-Electric-Field-Induced Second-Harmonic (EFISH) generation at weakly nonlinear buried Si(001)-SiO$_2$ interfaces is studied experimentally in planar Si(001)-SiO$_2$-Cr MOS structures by optical second-harmonic generation (SHG) spectroscopy with a tunable Ti:sapphire femtosecond laser. The spectral dependence of the EFISH contribution near the direct two-photon $E_1$ transition of silicon is extracted. A systematic phenomenological model of the EFISH phenomenon, including a detailed description of the space charge region (SCR) at the semiconductor-dielectric interface in accumulation, depletion, and inversion regimes, has been developed. The influence of surface quantization effects, interface states, charge traps in the oxide layer, doping concentration and oxide thickness on nonlocal screening of the DC-electric field and on breaking of inversion symmetry in the SCR is considered. The model describes EFISH generation in the SCR using a Green function formalism which takes into account all retardation and absorption effects of the fundamental and second harmonic (SH) waves, optical interference between field-dependent and field-independent contributions to the SH field and multiple reflection interference in the SiO$_2$ layer. Good agreement between the phenomenological model and our recent and new EFISH spectroscopic results is demonstrated. Finally, low-frequency electromodulated EFISH is demonstrated as a useful differential spectroscopic technique for studies of the Si-SiO$_2$ interface in silicon-based MOS structures.Comment: 31 pages, 14 figures, 1 table, figures are also available at http://kali.ilc.msu.su/articles/50/efish.ht