4 research outputs found
Synthesis of Benzofuro- and Indolo[3,2‑<i>b</i>]indoles via Palladium-Catalyzed Double <i>N</i>‑Arylation and Their Physical Properties
Two kinds of ladder-type π-conjugated
compounds, benzofuroÂ[3,2-<i>b</i>]Âindoles (BFIs) and indoloÂ[3,2-<i>b</i>]Âindoles
(IIs), were successfully synthesized using palladium-catalyzed double <i>N</i>-arylation of anilines with the corresponding dihalobiaryls.
Photophysical properties were evaluated by UV–vis and photoluminescence
spectroscopies and theoretical calculations. BFI derivatives showed
higher quantum yields (33–39%) than the II derivative (29%).
The absorption bands of the II derivative were more red-shifted compared
to BFI derivatives
Composition–Property Mapping in Bromide-Containing Tin Perovskite Using High-Purity Starting Materials
The wide band gaps of bromide-containing tin perovskites,
ASnI3–xBrx,
make them attractive materials for use as the top-layer absorber in
tandem solar cells, as well as in single-junction solar cells for
indoor applications. In the present work, a series of ASnI3–xBrx films was systematically
fabricated by varying the A-site (FA+, MA+,
and Cs+) and X-site (I– and Br–) ions. The use of a solvent-coordinated SnBr2 complex
as a high-purity source of bromide combined with Sn(IV) scavenging
treatment helps to ensure that the optimal film quality across the
compositional space is realized. The energy levels and electronic
properties of the films were characterized by photoemission yield
spectroscopy and photoluminescence measurements. The films with long
photoluminescence lifetime and favorable energy level alignment resulted
in superior device efficiency when evaluated in standard single-junction
solar cells. The best power conversion efficiency of 7.74% was obtained
when the composition was FA0.75MA0.25SnI2.25Br0.75
Composition–Property Mapping in Bromide-Containing Tin Perovskite Using High-Purity Starting Materials
The wide band gaps of bromide-containing tin perovskites,
ASnI3–xBrx,
make them attractive materials for use as the top-layer absorber in
tandem solar cells, as well as in single-junction solar cells for
indoor applications. In the present work, a series of ASnI3–xBrx films was systematically
fabricated by varying the A-site (FA+, MA+,
and Cs+) and X-site (I– and Br–) ions. The use of a solvent-coordinated SnBr2 complex
as a high-purity source of bromide combined with Sn(IV) scavenging
treatment helps to ensure that the optimal film quality across the
compositional space is realized. The energy levels and electronic
properties of the films were characterized by photoemission yield
spectroscopy and photoluminescence measurements. The films with long
photoluminescence lifetime and favorable energy level alignment resulted
in superior device efficiency when evaluated in standard single-junction
solar cells. The best power conversion efficiency of 7.74% was obtained
when the composition was FA0.75MA0.25SnI2.25Br0.75
Composition–Property Mapping in Bromide-Containing Tin Perovskite Using High-Purity Starting Materials
The wide band gaps of bromide-containing tin perovskites,
ASnI3–xBrx,
make them attractive materials for use as the top-layer absorber in
tandem solar cells, as well as in single-junction solar cells for
indoor applications. In the present work, a series of ASnI3–xBrx films was systematically
fabricated by varying the A-site (FA+, MA+,
and Cs+) and X-site (I– and Br–) ions. The use of a solvent-coordinated SnBr2 complex
as a high-purity source of bromide combined with Sn(IV) scavenging
treatment helps to ensure that the optimal film quality across the
compositional space is realized. The energy levels and electronic
properties of the films were characterized by photoemission yield
spectroscopy and photoluminescence measurements. The films with long
photoluminescence lifetime and favorable energy level alignment resulted
in superior device efficiency when evaluated in standard single-junction
solar cells. The best power conversion efficiency of 7.74% was obtained
when the composition was FA0.75MA0.25SnI2.25Br0.75