2 research outputs found
Transmetalation of Aqueous Inorganic Clusters: A Useful Route to the Synthesis of Heterometallic Aluminum and Indium Hydroxoî—¸Aquo Clusters
[Al<sub><i>x</i></sub>In<sub><i>y</i></sub>(μ<sub>3</sub>-OH)<sub>6</sub>(μ-OH)<sub>18</sub>(H<sub>2</sub>O)<sub>24</sub>]Â(NO<sub>3</sub>)<sub>15</sub> hydroxy–aquo clusters
(<b>Al<sub><i>x</i></sub>In<sub>13–<i>x</i></sub></b>) are synthesized through the evaporation of stoichiometrically
varied solutions of <b>Al<sub>13</sub></b> and InÂ(NO<sub>3</sub>)<sub>3</sub> using a transmetalation reaction. Several spectroscopic
techniques (<sup>1</sup>H NMR, <sup>1</sup>H-diffusion ordered spectroscopy,
dynamic light scattering, and Raman) are used to compare <b>Al<sub><i>x</i></sub>In<sub>13–<i>x</i></sub></b> to its <b>Al<sub>13</sub></b> counterpart. A thin film
of aluminum indium oxide was prepared from an <b>Al<sub>7</sub>In<sub>6</sub></b> cluster ink, showing its utility as a precursor
for materials
Minerals to Materials: Bulk Synthesis of Aqueous Aluminum Clusters and Their Use as Precursors for Metal Oxide Thin Films
We
describe a process to produce aqueous precursor solutions of
the <i><b>flat</b></i><b>-Al</b><sub><b>13</b></sub> hydroxo cluster (Al<sub>13</sub>(μ<sub>3</sub>-OH)<sub>6</sub>(μ<sub>2</sub>-OH)<sub>18</sub>(H<sub>2</sub>O)<sub>24</sub>(NO<sub>3</sub>)<sub>15</sub>) via stoichiometric dissolution
of bulk AlÂ(OH)<sub>3</sub>(s) in HNO<sub>3</sub>(aq). We highlight
its facility by demonstrating high yields and large-scale synthesis.
X-ray diffraction confirms formation of a single-phase product, and
Raman spectra show characteristic O-Al-O vibrational modes, both techniques
confirming the identity of the <i><b>flat</b></i><b>-Al</b><sub><b>13</b></sub> cluster in the bulk. <sup>27</sup>Al NMR spectroscopy and dynamic light scattering also confirm the
presence of the cluster in aqueous solution. We show the as-prepared
solution produces smooth and continuous thin films via spin-coating.
In capacitors, the films exhibit low leakage currents (near 10 nA/cm<sup>2</sup>) and dielectric constants expected for amorphous Al<sub>2</sub>O<sub>3</sub>. Because the precursor preparation requires no postsynthesis
purification, it is readily scalable to large volumes