Workshop 3D Image Analysis and Modeling

15:00 Closing / Optional tour through ITWM Useful Information In the foyer, a number of internet terminals is provided which you are welcome to use any time. Fraunhofer ITWM pursues a no smoking policy, so please refrain from smoking inside the building. A smoking area can be found outside the main entrance. Cooked lunch as well as small snacks are available during lunch breaks at the cafeteria across the entrance hall. The daily menu can be found at the registration desk. Prices range from about 1e to 5e. Timetables for buses going in direction of the city center can be found at the registration desk. If you need a taxi, call +49 (0)631 366777. In case you have any further questions, please contact any person wearing a yellow name tag

Étude de l’impact du procédé de friction malaxage sur la rupture ductile dans les alliages d’aluminium

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Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique

By analysing the carrier dynamics based on the rate equations and the change of the refractive index due to the efficient carrier capture, we have calculated the carrier capture process in the InAs/GaAs system detected by a simple degenerate pump-probe technique. The calculated results are found to be in good agreement with the experimental findings. Our results indicate that this simple technique, with the clear advantage of being easy to carry out, can be very useful in studying the carrier dynamics for some specific structures such as InAs ultrathin layers embedded in a GaAs matrix described here

Entwicklung eines Mikrowellenspektrometers mit Phasenmanipulation Abschlussbericht

SIGLEAvailable from TIB Hannover: F00B1307+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman

High resolution interferometry (HRI) and electronic speckle pattern interferometry (ESPI) applied to the thermomechanical study of a MOS power transistor

We present an original optical approach for the thermomechanical study of electronic devices. We have applied it to imaging of the deformation undergone by a MOS power transistor due to its operation. This imaging method allows derivation of the three components of the displacement vector of each point of the component surface while heated by the Joule effect under operating conditions. The method has nanometric resolution for the displacement measurement and is based upon analysis of the speckle structure of the device while illuminated by coherent light. A high resolution interferometer is also used to record the transient behaviour of the normal surface displacement of a point on the surface. These optical approaches provide interesting information about strain and stress in electronic power devices.Anglai