The infuence of atmosphere on performance of pure-phase WZ and ZB InAs nanowire transistors

We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N2 and O2, and N2 bubbled through liquid H2O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires.This work was funded by the Australian Research Council (ARC) and the University of New South Wales

Systematic in situ hydration neutron reflectometry study on Nafion thin films

Reported herein is a neutron reflectometry (NR) study on hydrated Nafion thin films (∼30 nm) on a silicon substrate with native oxide. The Nafion morphology is investigated systematically across the whole relative humidity range using both H2O and D2O vapours to enable a comparative study. By utilising this systematic approach two key results have been obtained. The first is that by leveraging the strong positive scattering signal from the D2O vapour, a complete and systematic water adsorption isotherm (Type II) for a Nafion thin film is produced. Utilising the slight negative scattering signal of the H2O enabled the quantification of the hydration dependent evolution of the formation of Nafion/water lamellae near the substrate surface. The number of lamellae layers increases continuously with hydration, and does not form abruptly. We also report the effects of swelling on the thin films across the relative humidity ranges. The work reported should prove useful in quantifying other hydration dependent properties of Nafion thin films such as conductivity and understanding Nafion/semiconductor based devices, as well as showcasing a NR methodology for other hydrophilic polymers

Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry

A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials typeselectronic signals in inorganic semiconductors and ionic/protonic signals in organic or bio-organic polymers, gels, or electrolytes. Here we demonstrate a new class of organic−inorganic transducing interface featuring semiconducting nanowires electrostatically gated using a solid proton-transporting hygroscopic polymer. This model platform allows us to study the basic transducing mechanisms as well as deliver high fidelity signal conversion by tapping into and drawing together the best candidates from traditionally disparate realms of electronic materials research. By combining complementary $n$- and $p$-type transducers we demonstrate functional logic with significant potential for scaling toward high-density integrated bioelectronic circuitry.This work was funded by the Australian Research Council (ARC), the University of New South Wales, the University of Queensland, Danish National Research Foundation and the Innovation Fund. A.P.M. acknowledges an ARC Future Fellowship (FT0990285) and DJC acknowledges Australian Nanotechnology Network Short Term Visit support. P.M. is an ARC Discovery Outstanding Research Award Fellow and the work at UQ was funded under the ARC Discovery Program (DP140103653). The Centre for Organic Photonics and Electronics is a strategic initiative of the University of Queensland. We thank Helen Rutlidge for conducting the inductively coupled plasma mass spectrometry measurements. This work was performed in part using the NSW and ACT nodes of the Australian National Fabrication Facility (ANFF) and the Mark Wainwright Analytical Centre at UNSW

Proceedings of the 35th Annual Australian/New Zealand Condensed Matter and Materials Meeting

arXiv: 1107.361

A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applications

We report on a parylene chemical vapor deposition system custom designed for producing ultrathin parylene films (5-100 nm thickness) for use as an electrical insulator in nanoscale electronic devices, including as the gate insulator in transistors. The system features a small deposition chamber that can be isolated and purged for process termination, a quartz crystal microbalance for monitoring deposition, and a rotating angled stage to increase coating conformity. The system was mostly built from off-the-shelf vacuum fittings allowing for easy modification and reduced cost compared to commercial parylene coating systems. The production of ultrathin parylene films for device applications is a niche not well catered to by commercial coating systems, which are typically designed to give thicker coatings (microns) with high uniformity over much larger areas. An added advantage of our design for nanoscale device applications is that the small deposition chamber is readily removable for transfer to a glovebox to enable parylene deposition onto pristine surfaces prepared in oxygen/water-free environments with minimal contamination

An improved process for fabricating high-mobility organic molecular crystal field-effect transistors

In this paper we present an improved process for producing elastomer transistor stamps and high-mobility organic field-effect transistors (FETs) based on semiconducting acene molecular crystals. In particular, we have removed the need to use a silanized Si wafer for curing the stamps and to handle a fragile micron thickness polydimethylsiloxane (PDMS) insulating film and laminate it, bubble-free, against the PDMS transistor stamp. We find that despite the altered design, rougherPDMS surface, and lamination and measurement of the device in air, we still achieve electrical mobilities of the order of 10 cm2 /V s, comparable to the current state of the art in organic FETs. Our device shows hole conduction with a threshold voltage of the order of ~9 V, which corresponds to a trap density of 1.4x10^10 cm-2

Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry(Conference Presentation)

A key task in bioelectronics is the transduction between ionic/protonic signals and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics. We present our work on a new class of organic-inorganic transducing interface utilising semiconducting InAs and GaAs nanowires directly gated with a proton transporting hygroscopic polymer consisting of undoped polyethylene oxide (PEO) patterned to nanoscale dimensions by a newly developed electron-beam lithography process [1]. Remarkably, we find our undoped PEO polymer electrolyte gate dielectric [2] gives equivalent electrical performance to the more traditionally used LiClO4-doped PEO [3], with an ionic conductivity three orders of magnitude higher than previously reported for undoped PEO [4]. The observed behaviour is consistent with proton conduction in PEO. We attribute our undoped PEO-based devices’ performance to the small external surface and high surface-to-volume ratio of both the nanowire conducting channel and patterned PEO dielectric in our devices, as well as the enhanced hydration afforded by device processing and atmospheric conditions. In addition to studying the basic transducing mechanisms, we also demonstrate high-fidelity ionic to electronic conversion of a.c. signals at frequencies up to 50 Hz. Moreover, by combining complementary n- and p-type transducers we demonstrate functional hybrid ionic-electronic circuits can achieve logic (NOT operation), and with some further engineering of the nanowire contacts, potentially also amplification. Our device structures have significant potential to be scaled towards realising integrated bioelectronic circuitry. [1] D.J. Carrad et al., Nano Letters 14, 94 (2014). [2] D.J. Carrad et al., Manuscript in preparation (2016). [3] S.H. Kim et al., Advanced Materials 25, 1822 (2013). [4] S.K. Fullerton-Shirey et al., Macromolecules 42, 2142 (2009)

A tunable metal-organic resistance thermometer

Mixing thin Sn films into polyetheretherketone (PEEK) substrates using Sn ion beams can turn this inherently insulating polymer metallic. Control of this process changes the sample's conductivity by over ten orders of magnitude (see picture). This can be used to produce high-performance, robust, low-cost thermometers, which can be easily tailored to the desired temperature range

Impact of invasive metal probes on Hall measurements in semiconductor nanostructures

Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device geometries that deviate significantly from the ideal of elongated Hall bars with currentless contacts. Many devices using these new materials have a low aspect ratio and feature metal Hall probes that overlap with the semiconductor channel. This can lead to a significant distortion of the current flow. We present experimental data from InAs 2D nanofin devices with different Hall probe geometries to study the influence of Hall probe length and width. We use finite-element simulations to further understand the implications of these aspects and expand their scope to contact resistance and sample aspect ratio. Our key finding is that invasive probes lead to significant underestimation of measured Hall voltage, typically of the order 40-80%. This in turn leads to a subsequent proportional overestimation of carrier concentration and an underestimation of mobility