Quantum Transport in 40-nm MOSFETs at Deep-Cryogenic Temperatures

In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as classical FETs or quantum dot devices when either a high or low drain bias is applied, respectively. The operation in classical regime shows improved transconductance and subthreshold slope with respect to 300 K. In the quantum regime, all measured devices show Coulomb blockade. This is explained by the formation of quantum dots in the channel, for which a model is proposed. The variability in parameters, important for quantum computing scaling, is also quantified. Our results show that bulk 40-nm node MOSFETs can be readily used for the co-integration of cryo-CMOS classical-quantum circuits at deep cryogenic temperatures and that the variability approaches the uniformity requirements to enable shared control

Carbon Nanohorns as Effective Nanotherapeutics in Cancer Therapy

Different carbon nanostructures have been explored as functional materials for the development of effective nanomaterials in cancer treatment applications. This review mainly aims to discuss the features, either strength or weakness, of carbon nanohorn (CNH), carbon conical horn-shaped nanostructures of sp2 carbon atoms. The interest for these materials arises from their ability to couple the clinically relevant properties of carbon nanomaterials as drug carriers with the negligible toxicity described in vivo. Here, we offer a comprehensive overview of the recent advances in the use of CNH in cancer treatments, underlining the benefits of each functionalization route and approach, as well as the biological performances of either loaded and unloaded materials, while discussing the importance of delivery devices