Subsuming the metal seed to transform binary metal chalcogenide nanocrystals into multinary compositions

Direct colloidal synthesis of multinary metal chalcogenide nanocrystals typically develops dynamically from the binary metal chalcogenide nanocrystals with the subsequent incorporation of additional metal cations from solution during the growth process. Metal seeding of binary and multinary chalcogenides is also established, although the seed is solely a catalyst for nanocrystal nucleation and the metal from the seed has never been exploited as active alloying nuclei. Here we form colloidal Cu–Bi–Zn–S nanorods (NRs) from Bi-seeded Cu2–xS heterostructures. The evolution of these homogeneously alloyed NRs is driven by the dissolution of the Bi-rich seed and recrystallization of the Cu-rich stem into a transitional segment, followed by the incorporation of Zn2+ to form the quaternary Cu–Bi–Zn–S composition. The present study also reveals that the variation of Zn concentration in the NRs modulates the aspect ratio and affects the nature of the majority charge carriers. The NRs exhibit promising thermoelectric properties with very low thermal conductivity values of 0.45 and 0.65 W/mK at 775 and 605 K, respectively, for Zn-poor and Zn-rich NRs. This study highlights the potential of metal seed alloying as a direct growth route to achieving homogeneously alloyed NRs compositions that are not possible by conventional direct methods or by postsynthetic transformations.</p

Understanding and controlling the evolution of nanomorphology and crystallinity of organic bulk-heterojunction blends with solvent vapor annealing

Solvent vapor annealing (SVA) has been shown to significantly improve the device performance of organic bulk-heterojunction solar cells, yet the mechanisms linking nanomorphology, crystallinity of the active layer, and performance are still largely missing. Here, the mechanisms are tackled by correlating the evolution of nanomorphology, crystallinity, and performance with advanced transmission electron microscopy methods systematically. Model system of DRCN5T:PC71BM blends are SVA treated with four solvents differing in their donor and acceptor solubilities. The choice of solvent drastically influences the rate at which the maximum device efficiency establishes, though similar values can be achieved for all solvents. The donor solubility is identified as a key parameter that controls the kinetics of diffusion and crystallization of the blend molecules, resulting in an inverse relationship between optimal annealing time and donor solubility. For the highest efficiency, optimum domain size and single-crystalline nature of DRCN5T fibers are found to be crucial. Moreover, the π–π stacking orientation of the crystallites is directly revealed and related to the nanomorphology, providing insight into the charge carrier transport pathways. Finally, a qualitative model relating morphology, crystallinity, and device efficiency evolution during SVA is presented, which may be transferred to other light-harvesting blends.</p

Ultrahigh carrier mobilities in ferroelectric domain wall Corbino cones at room temperature

Recently, electrically conducting heterointerfaces between dissimilar band insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport and fundamental aspects of conduction have been thoroughly explored. Perhaps surprisingly, similar studies on conceptually much simpler conducting homointerfaces, such as domain walls, are not nearly so well developed. Addressing this disparity, magnetoresistance is herein reported in approximately conical 180°charged domain walls, in partially switched ferroelectric thin-film single?crystal lithium niobate. This system is ideal for such measurements: first, the conductivity difference between domains and domain walls is unusually large (a factor of 1013) and hence currents driven through the thin film, between planar top and bottom electrodes, are overwhelmingly channeled along the walls; second, when electrical contact is made to the top and bottom of the domain walls and a magnetic field is applied along their cone axes, then the test geometry mirrors that of a Corbino disk: a textbook arrangement for geometric magnetoresistance measurement. Data imply carriers with extremely high room-temperature Hall mobilities of up to ≈3700 cm2  V−1  s−1. This is an unparalleled value for oxide interfaces (and for bulk oxides) comparable to mobilities in other systems seen at cryogenic, rather than at room, temperature.</p