Measurements of arterial and venous mesenteric vessel diameters.

<p>Measurements of arterial and venous mesenteric vessel diameters.</p

Non-occlusive mesenteric ischemia before and after endovascular vasospasm therapy.

<p>Reduced arterial diameter and caliber irregularities in the middle segment and branches of the SMA in CT angiography due to vasospasms from non-occlusive mesenteric ischemia (A). DSA (B) confirms the CT finding. Note the retrograde flow of the contrast agent into the aorta caused by increased vascular resistance in the SMA. Caliber irregularities are reduced after endovascular vasospasm therapy with i.a. prostavasin (C).</p

DataSheet_1_Induction treatment in high-grade B-cell lymphoma with a concurrent MYC and BCL2 and/or BCL6 rearrangement: a systematic review and meta-analysis.docx

Background and aimHigh-grade B cell lymphomas with concomitant MYC and BCL2 and/or BCL6 rearrangements (HGBCL-DH/TH) have a poor prognosis when treated with the standard R-CHOP-like chemoimmunotherapy protocol. Whether this can be improved using intensified regimens is still under debate. However, due to the rarity of HGBCL-DH/TH there are no prospective, randomized controlled trials (RCT) available. Thus, with this systematic review and meta-analysis we attempted to compare survival in HGBCL-DH/TH patients receiving intensified vs. R-CHOP(-like) regimens.MethodsThe PubMed and Web of Science databases were searched for original studies reporting on first-line treatment in HGBCL-DH/TH patients from 08/2014 until 04/2022. Studies with only localized stage disease, ≤10 patients, single-arm, non-full peer-reviewed publications, and preclinical studies were excluded. The quality of literature and the risk of bias was assessed using the Methodological Index for Non-Randomized Studies (MINORS) and National Heart, Lung, and Blood Institute (NHLBI) Quality Assessment Tool for Observational Cohort and Cross-Sectional Studies. Random-effect models were used to compare R-CHOP-(like) and intensified regimens regarding 2-year overall survival (2y-OS) and 2-year progression-free survival (2y-PFS).ResultsAltogether, 11 retrospective studies, but no RCT, with 891 patients were included. Only four studies were of good quality based on aforementioned criteria. Intensified treatment could improve 2y-OS (hazard ratio [HR]=0.78 [95% confidence interval [CI] 0.63-0.96]; p=0.02) as well as 2y-PFS (HR=0.66 [95% CI 0.44-0.99]; p=0.045).ConclusionsThis meta-analysis indicates that intensified regimens could possibly improve 2y-OS and 2y-PFS in HGBCL-DH/TH patients. However, the significance of these results is mainly limited by data quality, data robustness, and its retrospective nature. There is still a need for innovative controlled clinical trials in this difficult to treat patient population.Systematic review registrationhttps://www.crd.york.ac.uk/prospero, identifier CRD42022313234.</p

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe₂, MoS₂, and MoSe₂ Transistors

We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe₂ field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ∼0.3 kΩ μm, high on/off ratios up to >10⁹, and high drive currents exceeding 320 μA μm^–1. These favorable characteristics are combined with a two-terminal field-effect hole mobility μ_FE ≈ 2 × 10² cm² V^–1 s^–1 at room temperature, which increases to >2 × 10³ cm² V^–1 s^–1 at cryogenic temperatures. We observe a similar performance also in MoS₂ and MoSe₂ FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in postsilicon electronics

High-Performance WSe₂ Phototransistors with 2D/2D Ohmic Contacts

We report high-performance WSe₂ phototransistors with two-dimensional (2D) contacts formed between degenerately p-doped WSe₂ and undoped WSe₂ channel. A photoresponsivity of ∼600 mA/W with a high external quantum efficiency up to 100% and a fast response time (both rise and decay times) shorter than 8 μs have been achieved concurrently. More importantly, our WSe₂ phototransistor exhibits a high specific detectivity (∼10¹³ Jones) in vacuum, comparable or higher than commercial Si- and InGaAs-based photodetectors. Further studies have shown that the high photoresponsivity and short response time of our WSe₂ phototransistor are mainly attributed to the lack of Schottky-barriers between degenerately p-doped WSe₂ source/drain contacts and undoped WSe₂ channel, which can reduce the RC time constant and carrier transit time of a photodetector. Our experimental results provide an accessible strategy to achieve high-performance WSe₂ phototransistor architectures by improving their electrical transport and photocurrent generation simultaneously, opening up new avenues for engineering future 2D optoelectronic devices