Ion Drift and Polarization in Thin SiO₂ and HfO₂ Layers Inserted in Silicon on Sapphire

To reduce the built-in positive charge value at the silicon-on-sapphire (SOS) phase border obtained by bonding and a hydrogen transfer, thermal silicon oxide (SiO2) layers with a thickness of 50–310 nm and HfO2 layers with a thickness of 20 nm were inserted between silicon and sapphire by plasma-enhanced atomic layer deposition (PEALD). After high-temperature annealing at 1100 °C, these layers led to a hysteresis in the drain current–gate voltage curves and a field-induced switching of threshold voltage in the SOS pseudo-MOSFET. For the inserted SiO2 with a thickness of 310 nm, the transfer transistor characteristics measured in the temperature ranging from 25 to 300 °C demonstrated a triple increase in the hysteresis window with the increasing temperature. It was associated with the ion drift and the formation of electric dipoles at the silicon dioxide boundaries. A much slower increase in the window with temperature for the inserted HfO2 layer was explained by the dominant ferroelectric polarization switching in the inserted HfO2 layer. Thus, the experiments allowed for a separation of the effects of mobile ions and ferroelectric polarization on the observed transfer characteristics of hysteresis in structures of Si/HfO2/sapphire and Si/SiO2/sapphire

Influence of target-substrate distance during pulsed laser deposition on properties of LiNbO3 thin films

This paper shows the results of studying the influence of target-substrate distance during pulsed laser deposition on electrical properties of LiNbO3 thin films. It has been shown that changing the target-substrate distance we can obtain thin films with a different composition. EDX spectra indicate that the LiNbO3 thin films fabricated under 120 mm target-substrate distance depleted Nb (0.7 atm. %) compare to LiNbO3 films fabricated under 20 mm target-substrate distance (11.0 atm. %). Varying target-substrate distance in the range from 20 mm to 120 mm charge carrier mobility increasing from 24 cm2/Vcenterdots to 395 cm2/Vcenterdots and concentration of charge carrier decreasing from 3centerdot1013 cm-3 to 1centerdot1012 cm-3. Obtained results can be used under development and fabrication of integral acousto-optic and surface acoustic wave (SAW) devices

Oxygen pressure influence on properties of nanocrystalline linbo3 films grown by laser ablation

10.3390/nano10071371Nanomaterials1071-1

Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga₂O₃ Polymorphs

In this study, the results of hydrogen plasma treatments of β-Ga2O3, α-Ga2O3, κ-Ga2O3 and γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an interplay between donor-like hydrogen configurations and acceptor complexes formed by hydrogen with gallium vacancies. A strong anisotropy of hydrogen plasma effects in the most thermodynamically stable β-Ga2O3 are explained by its low-symmetry monoclinic crystal structure. For the metastable, α-, κ- and γ-polymorphs, it is shown that the net result of hydrogenation is often a strong increase in the density of centers supplying electrons in the near-surface regions. These centers are responsible for prominent, persistent photocapacitance and photocurrent effects

Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection

Application of micro-Raman spectroscopy for the monitoring of quality of high-k (h-k) dielectric protective layer deposition onto the surface of a nanowire (NW) chip has been demonstrated. A NW chip based on silicon-on-insulator (SOI) structures, protected with a layer of high-k dielectric ((h-k)-SOI-NW chip), has been employed for highly sensitive detection of microRNA (miRNA) associated with oncological diseases. The protective dielectric included a 2-nm-thick Al2O3 surface layer and a 8-nm-thick HfO2 layer, deposited onto a silicon SOI-NW chip. Such a chip had increased time stability upon operation in solution, as compared with an unprotected SOI-NW chip with native oxide. The (h-k)-SOI-NW biosensor has been employed for the detection of DNA oligonucleotide (oDNA), which is a synthetic analogue of miRNA-21 associated with oncological diseases. To provide biospecificity of the detection, the surface of (h-k)-SOI-NW chip was modified with oligonucleotide probe molecules (oDVA probes) complementary to the sequence of the target biomolecule. Concentration sensitivity of the (h-k)-SOI-NW biosensor at the level of DL~10−16 M has been demonstrated

Micro-Raman Characterization of Structural Features of High-k Stack Layer of SOI Nanowire Chip, Designed to Detect Circular RNA Associated with the Development of Glioma

The application of micro-Raman spectroscopy was used for characterization of structural features of the high-k stack (h-k) layer of “silicon-on-insulator” (SOI) nanowire (NW) chip (h-k-SOI-NW chip), including Al2O3 and HfO2 in various combinations after heat treatment from 425 to 1000 °C. After that, the NW structures h-k-SOI-NW chip was created using gas plasma etching optical lithography. The stability of the signals from the monocrine phase of HfO2 was shown. Significant differences were found in the elastic stresses of the silicon layers for very thick (>200 nm) Al2O3 layers. In the UV spectra of SOI layers of a silicon substrate with HfO2, shoulders in the Raman spectrum were observed at 480–490 cm−1 of single-phonon scattering. The h-k-SOI-NW chip created in this way has been used for the detection of DNA-oligonucleotide sequences (oDNA), that became a synthetic analog of circular RNA–circ-SHKBP1 associated with the development of glioma at a concentration of 1.1 × 10−16 M. The possibility of using such h-k-SOI NW chips for the detection of circ-SHKBP1 in blood plasma of patients diagnosed with neoplasm of uncertain nature of the brain and central nervous system was shown