This paper shows the results of studying the influence of target-substrate distance during pulsed laser deposition on electrical properties of LiNbO3 thin films. It has been shown that changing the target-substrate distance we can obtain thin films with a different composition. EDX spectra indicate that the LiNbO3 thin films fabricated under 120 mm target-substrate distance depleted Nb (0.7 atm. %) compare to LiNbO3 films fabricated under 20 mm target-substrate distance (11.0 atm. %). Varying target-substrate distance in the range from 20 mm to 120 mm charge carrier mobility increasing from 24 cm2/Vcenterdots to 395 cm2/Vcenterdots and concentration of charge carrier decreasing from 3centerdot1013 cm-3 to 1centerdot1012 cm-3. Obtained results can be used under development and fabrication of integral acousto-optic and surface acoustic wave (SAW) devices
