Supplement 1: Experimental detection of polarization-frequency quantum correlations in a photonic quantum channel by local operations

Supplemental document Originally published in Optica on 20 December 2015 (optica-2-12-1014

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire

We report a new type of single InAs quantum dot (QD) embedded at the junction of gold-free branched GaAs/AlGaAs nanowire (NW) grown on silicon substrate. The photoluminescence intensity of such QD is ∼20 times stronger than that from randomly distributed QD grown on the facet of straight NW. Sharp excitonic emission is observed at 4.2 K with a line width of 101 μeV and a vanishing two-photon emission probability of <i>g</i>²(0) = 0.031(2). This new nanostructure may open new ways for designing novel quantum optoelectronic devices