Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50%

An approach for an all lattice-matched multijunction solar cell optimized design is presented with 5.807 Å lattice constant, together with a detailed analysis of its performance by means of full device modeling. The simulations show that a (1.93 eV)In_(0.37)Al_(0.63)As/(1.39 eV)In_(0.38)Ga_(0.62)As_(0.57)P_(0.43)/(0.94 eV)In_(0.38)Ga_(0.62)As 3-junction solar cell can achieve efficiencies >51% under 100-suns illumination (with V_(oc) = 3.34 V). As a key proof of concept, an equivalent 3-junction solar cell lattice-matched to InP was fabricated and tested. The independently connected single junction solar cells were also tested in a spectrum splitting configuration, showing similar performance to a monolithic tandem device, with V_(oc) = 1.8 V

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates

In this study, we report synthesis of large area (> 2 cm^2) crack-free GaInP/GaAs double junction solar cells on 50 mm diameter Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer techniques. Defect removal from the template film and film surface prior to epitaxial growth was found to be critical to achievement of high open circuit voltage and efficiency. Cells grown on templates prepared with chemical mechanical polishing in addition a wet chemical etch show comparable performance to control devices grown on bulk Ge substrates. Current-voltage (I–V) data under AM 1.5 illumination indicate that the short circuit current is comparable in templated and control cells, but the open circuit voltage is slightly lower (2.08V vs. 2.16V). Spectral response measurements indicate a drop in open circuit voltage due to a slight lowering of the top GaInP cell band gap. The drop in band gap is due to a difference in the indium composition in the two samples caused by the different miscut (9° vs. 6°) of the two kinds of substrates

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates

In this study, we report synthesis of large area (> 2 cm^2) crack-free GaInP/GaAs double junction solar cells on 50 mm diameter Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer techniques. Defect removal from the template film and film surface prior to epitaxial growth was found to be critical to achievement of high open circuit voltage and efficiency. Cells grown on templates prepared with chemical mechanical polishing in addition a wet chemical etch show comparable performance to control devices grown on bulk Ge substrates. Current-voltage (I–V) data under AM 1.5 illumination indicate that the short circuit current is comparable in templated and control cells, but the open circuit voltage is slightly lower (2.08V vs. 2.16V). Spectral response measurements indicate a drop in open circuit voltage due to a slight lowering of the top GaInP cell band gap. The drop in band gap is due to a difference in the indium composition in the two samples caused by the different miscut (9° vs. 6°) of the two kinds of substrates

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates

Large area, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition on Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates

First demonstration of monolithic InP-based InAlAs/InGaAsP/InGaAs triple junction solar cells

Spectrolab has demonstrated the first lattice matched InAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising results with an open circuit voltage (V_(oc)) of 1.8V, a short-circuit current density (J_(sc)) of 11.0 mA/cm^2, a fill factor of 64.4%, and a 1-sun AM1.5D efficiency of 13.8%. The same cell also passes 27-suns under concentration. Improvements in layer design and crystal quality of advanced features can further raise the 1-sun and concentrated AM1.5D conversion efficiency of the InP-based triple junction cell beyond 20%