Large area, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition on Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates
