Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit

Design of a low-light-level image sensor with on-chip sigma-delta analog-to-digital conversion

The design and projected performance of a low-light-level active-pixel-sensor (APS) chip with semi-parallel analog-to-digital (A/D) conversion is presented. The individual elements have been fabricated and tested using MOSIS * 2 µm CMOS technology, although the integrated system has not yet been fabricated. The imager consists of a 128x128 array of active pixels at a 50 µm pitch. Each column of pixels shares a 10-bit A/D converter based on first-order oversampled sigma-delta (Σ-∆) modulation. The 10-bit outputs of each converter are multiplexed and read out through a single set of outputs. A semi-parallel architecture is chosen to achieve 30 frames/second operation even at low light levels. The sensor is designed for less than 12 e- rms noise performance. 1

Low-power, low-noise analog circuits for on-focalplane signal processing of infrared sensors

On-focal-plane signal processing circuits for enhancement of IR imager performance are presented. To enable the detection of high background IR images, an in-pixel current-mode background suppression scheme is presented. The background suppression circuit consists of a current memory placed in the feedback loop of a CTIA and is designed for a thousand-fold suppression of the background flux, thereby easing circuit design constraints, and assuring BLIP operation even with detectors having large response non-uniformities. For improving the performance of low-background IR imagers, an onchip column-parallel analog-to-digital converter (ADC) is presented. The design of a 10-bit ADC with 50 µm pitch and based on sigma-delta (Σ-∆) modulation is presented. A novel IR imager readout technique featuring photoelectron counting in the unit cell is presented for ultra-low background applications. The output of the unit cell is a digital word corresponding to the incident flux density and the readout is noise free. The design of low-power (< 5 µW), sub-electron input-referred noise, high-gain (> 100,000), small real-estate (60 µm pitch) self-biased CMOS amplifiers required for photon counting are presented. 1