Strain-engineering of twist-angle in graphene/hBN superlattice devices

This is the author accepted manuscript. The final version is available on open access from American Chemical Society via the DOI in this recordThe observation of novel physical phenomena such as Hofstadter’s butterfly, topological currents, and unconventional superconductivity in graphene has been enabled by the replacement of SiO2 with hexagonal boron nitride (hBN) as a substrate and by the ability to form superlattices in graphene/hBN heterostructures. These devices are commonly made by etching the graphene into a Hall-bar shape with metal contacts. The deposition of metal electrodes, the design, and specific configuration of contacts can have profound effects on the electronic properties of the devices possibly even affecting the alignment of graphene/hBN superlattices. In this work, we probe the strain configuration of graphene on hBN in contact with two types of metal contacts, two-dimensional (2D) top-contacts and one-dimensional edge-contacts. We show that top-contacts induce strain in the graphene layer along two opposing leads, leading to a complex strain pattern across the device channel. Edge-contacts, on the contrary, do not show such strain pattern. A finite-elements modeling simulation is used to confirm that the observed strain pattern is generated by the mechanical action of the metal contacts clamped to the graphene. Thermal annealing is shown to reduce the overall doping while increasing the overall strain, indicating an increased interaction between graphene and hBN. Surprisingly, we find that the two contact configurations lead to different twist-angles in graphene/hBN superlattices, which converge to the same value after thermal annealing. This observation confirms the self-locking mechanism of graphene/hBN superlattices also in the presence of strain gradients. Our experiments may have profound implications in the development of future electronic devices based on heterostructures and provide a new mechanism to induce complex strain patterns in 2D materials.Engineering and Physical Sciences Research Council (EPSRC)Royal SocietyNewton FundLeverhulme TrustHigher Committee for Education Development in Iraq (HCED)Royal Academy of Engineerin

Fast and Highly Sensitive Ionic-Polymer-Gated WS2 -Graphene Photodetectors

This is the final version of the article. Available from Wiley via the DOI in this record.The combination of graphene with semiconductor materials in heterostructure photodetectors enables amplified detection of femtowatt light signals using micrometer-scale electronic devices. Presently, long-lived charge traps limit the speed of such detectors, and impractical strategies, e.g., the use of large gate-voltage pulses, have been employed to achieve bandwidths suitable for applications such as video-frame-rate imaging. Here, atomically thin graphene-WS2 heterostructure photodetectors encapsulated in an ionic polymer are reported, which are uniquely able to operate at bandwidths up to 1.5 kHz whilst maintaining internal gain as large as 10(6) . Highly mobile ions and the nanometer-scale Debye length of the ionic polymer are used to screen charge traps and tune the Fermi level of the graphene over an unprecedented range at the interface with WS2 . Responsivity R = 10(6) A W(-1) and detectivity D* = 3.8 × 10(11) Jones are observed, approaching that of single-photon counters. The combination of both high responsivity and fast response times makes these photodetectors suitable for video-frame-rate imaging applications.J.D.M. acknowledges financial support from the Engineering and Physical Sciences Research Council (EPSRC) of the United Kingdom, via the EPSRC Centre for Doctoral Training in Metamaterials (Grant No. EP/L015331/1 ). S.F.R acknowledges financial support from the Higher Committee for Education Development in Iraq (HCED). S.R. and M.F.C. acknowledge financial support from EPSRC (Grant No. EP/J000396/1, EP/K017160/1, EP/K010050/1, EP/G036101/1, EP/M001024/1, and EP/M002438/1) and from Royal Society International Exchanges Scheme 2016/R1

Role of defect states in functionalized graphene photodetectors

This is the final version of the article. Available from SPIE via the DOI in this record.SPIE Optics + Photonics conference 2017, 6-10 August 2017, San Diego, California, USAThe functionalization of graphene can enhance the optoelectronic properties of graphene, allowing the creation of highly sensitive broadband photodetectors. Presently, the role played by defects, induced by the functionalization of graphene, on the performance of graphene photodetectors is not well understood. Here, we investigate the optoelectronic properties of van der Waals heterostructures comprising of graphene and a functionalized partner, formed by pristine and fluorinated graphene. We find that the electrical properties of graphene are preserved upon formation of the heterostructure. A negligible charge transfer is observed across the interface between the two materials which limits the performance of the photodetector due to the vertical separation of the two materials.J.D.M. acknowledges financial support from the Engineering and Physical Sciences Research Council (EPSRC) of the United Kingdom, via the EPSRC Centre for Doctoral Training in Metamaterials (Grant No. EP/L015331/1). S.R. and M.F.C. acknowledge financial support from EPSRC (Grant No. EP/J000396/1, EP/K017160/1, EP/K010050/1, EP/G036101/1, EP/M001024/1, and EP/M002438/1) and from Royal Society International Exchanges Scheme 2016/R1

Laser writable high-K dielectric for van der Waals nano-electronics

This is the author accepted manuscript. The final version is available from American Association for the Advancement of Science via the DOI in this record.Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities. Unfortunately, commonly used high-k oxide deposition methods are not directly compatible with 2D materials. Here we demonstrate a method to embed a multi-functional few nm thick high-k oxide within van der Waals devices without degrading the properties of the neighbouring 2D materials. This is achieved by in-situ laser oxidation of embedded few layer HfS2 crystals. The resultant oxide is found to be in the amorphous phase with a dielectric constant of k~15 and break-down electric fields in the range of 0.5-0.6 V/nm. This transformation allows for the creation of a variety of fundamental nano-electronic and opto-electronic devices including, flexible Schottky barrier field effect transistors, dual gated graphene transistors as well as vertical light emitting and detecting tunnelling transistors. Furthermore, upon dielectric break-down, electrically conductive filaments are formed. This filamentation process can be used to electrically contact encapsulated conductive materials. Careful control of the filamentation process also allows for reversible switching between two resistance states. This allows for the creation of resistive switching random access memories (ReRAMs). We believe that this method of embedding a high-k oxide within complex van der Waals heterostructures could play an important role in future flexible multi-functional van der Waals devices.F.W acknowledges support from the Royal Academy of Engineering. J.D.M. acknowledges financial support from the Engineering and Physical Sciences Research Council (EPSRC) of the United Kingdom, via the EPSRC Centre for Doctoral Training in Metamaterials (Grant No. EP/L015331/1). S.R. and M.F.C. acknowledge financial support from EPSRC (Grant no. EP/K010050/1, EP/M001024/1, EP/M002438/1), from Royal Society international Exchanges Scheme 2016/R1, from The Leverhulme trust (grant title “Quantum Revolution” and "Quantum Drums"). A.P Rooney and S.J Haigh acknowledge support from the EPSRC postdoctoral fellowship and from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (grant agreement ERC-2016-STG-EvoluTEM-715502) and the Defence Threat Reduction Agency (HDTRA1-12-1-0013). I.A. acknowledges financial support from The European Commission Marie Curie Individual Fellowships (Grant number 701704)