5 research outputs found
GHz Range SAW Transducers Using Electron Beam Lithography
Nanometer electrodes of the order of 0.085 μm width have been fabricated using direct
electron beam lithography, normal lift-off techniques and 0₂-plasma cleaning system. These
techniques have been applied to Inter-Digital Transducers (IDТ) as surface acoustic wave (SAW)
transducers in the GHz-range. We performed SAW filter experiments at GHz-range. Filters with
minimum insertion loss of 16.0 dB at the center frequency of 5 GHz and 27 dB at 11 GHz were obtained.Zadanie pt. Digitalizacja i udostępnienie w Cyfrowym Repozytorium Uniwersytetu Łódzkiego kolekcji czasopism naukowych wydawanych przez Uniwersytet Łódzki nr 885/P-DUN/2014 zostało dofinansowane ze środków MNiSW w ramach działalności upowszechniającej naukę
Current-induced magnetization switching in MgO barrier magnetic tunnel junctions with CoFeB based synthetic ferrimagnetic free layers
We investigated the effect of using a synthetic ferrimagnetic (SyF) free
layer in MgO-based magnetic tunnel junctions (MTJs) on current-induced
magnetization switching (CIMS), particularly for application to spin-transfer
torque random access memory (SPRAM). The employed SyF free layer had a
Co40Fe40B20/ Ru/ Co40Fe40B20 and Co20Fe60B20/Ru/Co20Fe60B20 structures, and the
MTJs(100x(150-300) nm^2) were annealed at 300oC. The use of SyF free layer
resulted in low intrinsic critical current density (Jc0) without degrading the
thermal-stability factor (E/kBT, where E, kB, and T are the energy potential,
the Boltzmann constant, and temperature,respectively). When the two CoFeB
layers of a strongly antiferromagnetically coupled SyF free layer had the same
thickness, Jc0 was reduced to 2-4x10^6 A/cm^2. This low Jc0 may be due to the
decreased effective volume under the large spin accumulation at the CoFeB/Ru.
The E/kBT was over 60, resulting in a retention time of over ten years and
suppression of the write current dispersion for SPRAM. The use of the SyF free
layer also resulted in a bistable (parallel/antiparallel) magnetization
configuration at zero field, enabling the realization of CIMS without the need
to apply external fields to compensate for the offset field.Comment: 6 page