Extremely uniform lasing wavelengths of InP microdisk lasers heterogeneously integrated on SOI

A standard deviation in lasing wavelength lower than 500pm is characterized on nominally identical and optically-pumped microdisk lasers, heterogeneously integrated on the same SOI circuit. This lasing wavelength uniformity is obtained using electron-beam lithography

Proof-of-concept demonstration of an all-optical de-multiplexer using III-V/SOI microdisk resonator fabricated in a CMOS pilot line

We present a proof-of-concept demonstration of all-optical de-multiplexing of a non-return-to zero 10Gbps data controlled by 2.5GHz clock in an ultra-small III-V-on-silicon microdisk fabricated in a CMOS pilot line

Unidirectional III-V microdisk lasers heterogeneously integrated on SOI

We demonstrate unidirectional bistability in microdisk lasers electrically pumped and heterogeneously integrated on SOI. The lasers operate in continuous wave regime at room temperature and are single mode. Integrating a passive distributed Bragg reflector (DBR) on the waveguide to which the microdisk is coupled feeds laser emission back into the laser cavity. This introduces an extra unidirectional gain and results in unidirectional emission of the laser, as demonstrated in simulations as well as in experiment

10Gbps bias-free all-optical wavelength conversion using InP-microdisk resonators heterogeneously integrated onto SOI

Using InP-based microdisk lasers heterogeneously integrated onto silicon passive waveguide circuits, we demonstrate all-optical wavelength conversion of 10Gbps NRZ PRBS signals without requiring any bias or extra seeding beam. The experimental results also indicate that bitrates of 20 or 25Gbps should be achievable

Heterogeneously integrated microdisk lasers for optical interconnects and optical logic

Optical interconnect and optical packet switching systems could take advantage of small footprint, low power lasers and optical logic elements. Microdisk lasers, with a diameter below 10 mu m and fabricated in InP membranes with a high index contrast, offer this possibility at the telecom wavelengths. The lasers are fabricated using heterogeneous integration of InP membranes on silicon-on-insulator (SOI) passive waveguide circuits, which allows to combine the active elements with compact, high-index contrast passive elements. The lasing mode in such microdisk lasers is a whispering gallery mode, which can be either in the clockwise (CW) or counter clockwise direction (CCW) or in both. The coupling to the SOI wire waveguides is through evanescent coupling. Predefined, unidirectional operation can be achieved by terminating the SOI wires at one end with Bragg gratings. For all-optical flip-flops, the laser operation must be switchable between CW and CCW, using short optical pulses. Unidirectional operation in either direction is only possible if the coupling between CW and CCW direction is very small, requiring small sidewall surface roughness, and if the gain suppression is sufficiently large, requiring large internal power levels. All-optical flip-flops based on microdisk lasers with diameter of 7.5 mu m have been demonstrated. They operate with a CW power consumption of a few mW and switch in 60ps with switching energies as low as 1.8fJ. Operation as all-optical gate has also been demonstrated. The surface roughness is limited through optimized etching of the disks and the large internal power is obtained through good heat sink