229 research outputs found
A Prototype Front-End Readout Chip for Silicon Microstrip Detectors Using an Advanced SiGe Technology
The upgrade of the ATLAS detector for the high luminosity upgrade of the LHC will require a rebuild of the Inner Detector as well as replacement of the readout electronics of the Liquid Argon Calorimeter and other detector components. We proposed some time ago to study silicon germanium (SiGe) BiCMOS technologies as a possible choice for the required silicon microstrip and calorimeter front-end chips given that they showed promise to provide necessary low noise at low power. Evaluation of the radiation hardness of these technologies has been under study. To validate the expected performance of these technologies, we designed and fabricated an 8-channel front-end readout chip for a silicon microstrip detector using the IBM 8WL technology, a likely choice for the ATLAS upgrade. Preliminary electrical characteristics of this chip will be presented
Comparison of 35 and 50 {\mu}m thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2
We report results from the testing of 35 {\mu}m thick Ultra-Fast Silicon
Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison
of these new results to data reported before on 50 {\mu}m thick UFSD produced
by HPK. The 35 {\mu}m thick sensors were irradiated with neutrons to fluences
of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested
pre-irradiation and post-irradiation with minimum ionizing particles (MIPs)
from a 90Sr \b{eta}-source. The leakage current, capacitance, internal gain and
the timing resolution were measured as a function of bias voltage at -20C and
-27C. The timing resolution was extracted from the time difference with a
second calibrated UFSD in coincidence, using the constant fraction method for
both. Within the fluence range measured, the advantage of the 35 {\mu}m thick
UFSD in timing accuracy, bias voltage and power can be established.Comment: 9 pages, 9 figures, HSTD11 Okinawa. arXiv admin note: text overlap
with arXiv:1707.0496
Radiation Hardness of Thin Low Gain Avalanche Detectors
Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure
where an appropriate doping of the multiplication layer (p+) leads to high
enough electric fields for impact ionization. Gain factors of few tens in
charge significantly improve the resolution of timing measurements,
particularly for thin detectors, where the timing performance was shown to be
limited by Landau fluctuations. The main obstacle for their operation is the
decrease of gain with irradiation, attributed to effective acceptor removal in
the gain layer. Sets of thin sensors were produced by two different producers
on different substrates, with different gain layer doping profiles and
thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected
charge and leakage current was compared before and after irradiation with
neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient
Current Technique and charge collection measurements with LHC speed electronics
were employed to characterize the detectors. The thin LGAD sensors were shown
to perform much better than sensors of standard thickness (~300 um) and offer
larger charge collection with respect to detectors without gain layer for
fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of
LGADs. Pions were found to be more damaging than neutrons at the same
equivalent fluence, while no significant difference was found between different
producers. At very high fluences and bias voltages the gain appears due to deep
acceptors in the bulk, hence also in thin standard detectors
The rarity of terrestrial gamma-ray flashes
We report on the first search for Terrestrial Gamma-ray Flashes (TGFs) from altitudes where they are thought to be produced. The Airborne Detector for Energetic Lightning Emissions (ADELE), an array of gamma-ray detectors, was flown near the tops of Florida thunderstorms in August/September 2009. The plane passed within 10 km horizontal distance of 1213 lightning discharges and only once detected a TGF. If these discharges had produced TGFs of the same intensity as those seen from space, every one should have been seen by ADELE. Separate and significant nondetections are established for intracloud lightning, negative cloud-to-ground lightning, and narrow bipolar events. We conclude that TGFs are not a primary triggering mechanism for lightning. We estimate the TGF-to-flash ratio to be on the order of 10^(−2) to 10^(−3) and show that TGF intensities cannot follow the well-known power-law distribution seen in earthquakes and solar flares, due to our limits on the presence of faint events
First Test Results of the Trans-Impedance Amplifier Stage of the Ultra-fast HPSoC ASIC
We present the first results from the HPSoC ASIC designed for readout of
Ultra-fast Silicon Detectors. The 4-channel ASIC manufactured in 65 nm CMOS by
TSMC has been optimized for 50 um thick AC-LGAD. The evaluation of the analog
front end with \b{eta}-particles impinging on 3x3 AC-LGAD arrays (500 um pitch,
200x200 um2 metal) confirms a fast output rise time of 600 ps and good timing
performance with a jitter of 45 ps. Further calibration experiments and TCT
laser studies indicate some gain limitations that are being investigated and
are driving the design of the second-generation pre-amplification stages to
reach a jitter of 15 ps.Comment: 7 pages, 6 figure
Synchrotron light source X-ray detection with Low-Gain Avalanche Diodes
The response of Low Gain Avalanche Diodes (LGADs), which are a type of thin
silicon detector with internal gain, to X-rays of energies between 6-70 keV was
characterized at the SLAC light source (SSRL). The utilized beamline at SSRL
was 11-2, with a nominal beam size of 3 cm x 0.5 cm, a repetition rate of 500
MHz, and very monochromatic. LGADs of different thicknesses and gain layer
configurations were read out using fast amplification boards and digitized with
a fast oscilloscope. Standard PiN devices were characterized as well. The
devices' energy resolution and time resolution as a function of X-ray energy
were measured. The charge collection and multiplication mechanism were
simulated using TCAD Sentaurus, and the results were compared with the
collected data.Comment: 18 pages, 18 figure
Radiation hardness studies of a 130 nm Silicon Germanium BiCMOS technology with a dedicated ASIC
We present the radiation hardness studies on the bipolar devices of the 130 nm 8WL Silicon Germanium (SiGe) BiCMOS technology from IBM. This technology has been proposed as one of the candidates for the Front-End (FE) readout chip of the upgraded Inner Detector (ID) and the Liquid Argon Calorimeter (LAr) of the ATLAS Upgrade experiment. After neutron irradiations, devices remain at acceptable performances at the maximum radiation levels expected in the Si tracker and LAr calorimeter
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