24 research outputs found
Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon
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Surface disorder production during plasma immersion implantation and high energy ion implantation
Full text linkSpatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current
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Measurement of the Thickness and Optical Properties of Thermal Oxides of Si Using Spectroscopic Ellipsometry and Stylus Profilometry
No full textDetection of thin a-Si:H antireflective coatings on oxidized c-Si by resonant-detected spectroscopic ellipsometry
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