Low-Temperature Solution-Processed Electron Transport Layers for Inverted Polymer Solar Cells

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimProcessing temperature is highlighted as a convenient means of controlling the optical and charge transport properties of solution processed electron transport layers (ETLs) in inverted polymer solar cells. Using the well-studied active layer – poly(3-hexylthiophene-2,5-diyl):indene-C60 bisadduct – the influence of ETL processing temperatures from 25 to 450 °C is shown, reporting the role of crystallinity, structure, charge transport, and Fermi level (EF) on numerous device performance characteristics. It has been determined that an exceptionally low temperature processed ETL (110 °C) increases device power conversion efficiency by a factor greater than 50% compared with a high temperature (450 °C) processed ETL. Modulations in device series and shunt resistance, induced by changes in the ETL transport properties, are observed in parallel to significant changes in device open circuit voltage attributed to changes on the EF of the ETLs. This work highlights the importance of interlayer control in multilayer photovoltaic devices and presents a convenient material compatible with future flexible and roll-to-roll processes

Energy quantization in solution-processed layers of indium oxide and their application in resonant tunneling diodes

\u3cp\u3eThe formation of quantized energy states in ultrathin layers of indium oxide (In\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e) grown via spin coating and thermally annealed at 200°C in air is studied. Optical absorption measurements reveal a characteristic widening of the optical band gap with reducing In\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e layer thickness from ≈43 to ≈3 nm in agreement with theoretical predictions for an infinite quantum well. Through sequential deposition of In\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e and gallium oxide (Ga\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e) layers, superlattice-like structures with controlled dimensionality and spatially varying conduction band characteristics are demonstrated. This simple method is then explored for the fabrication of functional double-barrier resonant tunneling diodes. Nanoscale current mapping analysis using conductive atomic force microscopy reveals that resonant tunneling is not uniform but localized in specific regions of the apparent device area. The latter observation is attributed to variation in the layer(s) thickness of the In\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e quantum well and/or the Ga\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e barrier layers. Despite the nonidealities, the tremendous potential of solution-processable oxide semiconductors for the development of quantum effect devices that have so far been demonstrated only via sophisticated growth techniques is demonstrated.\u3c/p\u3

ZnO nanorod arrays as electron injection layers for efficient organic light emitting diodes

Nanostructured oxide arrays have received significant attention as charge injection and collection electrodes in numerous optoelectronic devices. Zinc oxide (ZnO) nanorods have received particular interest owing to the ease of fabrication using scalable, solution processes with a high degree of control of rod dimension and density. Here, vertical ZnO nanorods as electron injection layers in organic light emitting diodes are implemented for display and lighting purposes. Implementing nanorods into devices with an emissive polymer, poly(9,9-dioctyluorene-alt-benzothiadiazole) (F8BT) and poly(9,9-di-n-octylfluorene-alt-N-(4-butylphenyl)dipheny-lamine) (TFB) as an electron blocking layer, brightness and efficiencies up to 8602 cd m−2 and 1.66 cd A−1 are achieved. Simple solution processing methodologies combined with postdeposition thermal processing are highlighted to achieve complete wetting of the nanorod arrays with the emissive polymer. The introduction of TFB to minimize charge leakage and nonradiative exciton decay results in dramatic increases to device yields and provides an insight into the operating mechanism of these devices. It is demonstrated that the detected emission originates from within the polymer layers with no evidence of ZnO band edge or defect emission. The work represents a significant development for the ongoing implementation of ZnO nanorod arrays into efficient light emitting devices

Fluorene copolymer bilayers for emission colour tuning in inverted hybrid light emitting diodes

© The Royal Society of Chemistry 2015.We present a robust, entirely solution-based processing route for the deposition of planar F8BT/TFB poly(9,9-dioctylfluorene-alt-benzothiadiazole)/poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)-diphenylamine) emissive/hole transport bilayers for emission colour tuning in inverted organic-inorganic hybrid light emitting diodes (HyLEDs). Our method allows the facile exploration of TFB thickness for the first time within inverted devices; here we describe the influence of TFB thickness on the device performance. In particular, we demonstrate significant variations in device electroluminescence with highly controlled tunability between green and orange (550 to 610 nm) emission; correlating directly with the thickness of the TFB layer. These changes are in parallel with a 20-fold increase in current efficiency with respect to F8BT-only devices, with our bilayer devices exhibiting luminance values exceeding 11 000 cd m-2. Additionally, through reflectance and angle-dependent electroluminescence measurements we explore the presence of microcavity effects and their impact on device behaviour. We introduce TFB not only as a charge blocking/transporting layer but also as an optical emission-tuning layer

p-channel thin-film transistors based on spray-coated Cu2O films

Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10−4–10−3 cm2 V−1 s−1 with some devices exhibiting values close to 1 × 10−2 cm2 V−1 s−1

Environmentally friendly, aqueous processed ZnO as an efficient electron transport layer for low temperature processed metal-halide perovskite photovoltaics

Here we report the incorporation of ZnO electron transport layers (ETLs), deposited using a remarkably simple water-based processing route, for use in methylammonium lead iodide (MAPI, CH3NH3PbI3) perovskite solar cells. The influence of ZnO processing temperature on the thermal stability and surface morphology of the perovskite films is studied in detail. We find that operational devices are achieved over the entire ZnO processing temperatures range investigated (100–450 °C) – however those prepared at 100 °C are significantly affected by current–voltage hysteresis. We find that the insertion of a thin phenyl-C61-butyric acid methyl ester (PCBM) layer between the ZnO and the MAPI significantly reduces current–voltage (J–V) hysteresis. Additionally we determine that the thermal stability of the MAPI improves when PCBM is inserted as an interface modifier. The fabrication of the PCBM modified ZnO at 100 °C enables the formation of low-temperature processed, thermally stable normal architecture cells with negligible hysteresis

An all-electric single-molecule hybridisation detector for short DNA fragments

In combining DNA nanotechnology and high-bandwidth single-molecule detection in nanopipettes, we demonstrate an all-electric, label-free hybridisation sensor for short DNA sequences (< 100 nt). Such short fragments are known to occur as circulating cell-free DNA in various bodily fluids, such as blood plasma and saliva, and have been identified as disease markers for cancer and infectious diseases. To this end, we use as a model system a 88-mer target from the RV1910c gene in Mycobacterium tuberculosis that is associated with antibiotic (isoniazid) resistance in TB. Upon binding to short probes attached to long carrier DNA, we show that resistive pulse sensing in nanopipettes is capable of identifying rather subtle structural differences, such as the hybridisation state of the probes, in a statistically robust manner. With significant potential towards multiplexing and high-throughput analysis, our study points towards a new, single-molecule DNA assay technology that is fast, easy to use and compatible with point of care environments

Introducing a nonvolatile N-type dopant drastically improves electron transport in polymer and small-molecule organic transistors

KGaA, Weinheim Molecular doping is a powerful yet challenging technique for enhancing charge transport in organic semiconductors (OSCs). While there is a wealth of research on p-type dopants, work on their n-type counterparts is comparatively limited. Here, reported is the previously unexplored n-dopant (12a,18a)-5,6,12,12a,13,18,18a,19-octahydro-5,6-dimethyl- 13,18[1′,2′]-benzenobisbenzimidazo [1,2-b:2′,1′-d]benzo[i][2.5]benzodiazo-cine potassium triflate adduct (DMBI-BDZC) and its application in organic thin-film transistors (OTFTs). Two different high electron mobility OSCs, namely, the polymer poly[[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8- bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2′-bithiophene)] and a small-molecule naphthalene diimides fused with 2-(1,3-dithiol-2-ylidene)malononitrile groups (NDI-DTYM2) are used to study the effectiveness of DMBI-BDZC as a n-dopant. N-doping of both semiconductors results in OTFTs with improved electron mobility (up to 1.1 cm2 V−1 s−1), reduced threshold voltage and lower contact resistance. The impact of DMBI-BDZC incorporation is particularly evident in the temperature dependence of the electron transport, where a significant reduction in the activation energy due to trap deactivation is observed. Electron paramagnetic resonance measurements support the n-doping activity of DMBI-BDZC in both semiconductors. This finding is corroborated by density functional theory calculations, which highlights ground-state electron transfer as the main doping mechanism. The work highlights DMBI-BDZC as a promising n-type molecular dopant for OSCs and its application in OTFTs, solar cells, photodetectors, and thermoelectrics