Martian impact basins: Morphology differences and tectonic provinces

Detailed geomorphic and structural mapping of five Martian basins and preliminary study of eleven other basins reveal four characteristic styles of modification that relate to the degree and age of past tectonic activity. Within regions that exhibit no evidence for tectonic activity, the modification style can be used to distinguish areas dominated by different exogenic processes. A framework for understanding these different styles of basin modification is provided

Professionalism in residency training: A compilation of desirable behaviors and a case-based comparison between pathologists in training and practice

Professionalism is one of the most important competencies for physicians but is also the most difficult to teach, assess, and manage. To better understand professionalism in pathology, we surveyed practicing pathologists and pathology residents and fellows in training. We identified 12 key desirable attributes of professionalism. In addition, 8 case scenarios highlighting unprofessional behavior were presented, and results between pathologists in practice and in training were compared. No significant differences between attending pathologists and residents were identified in how these cases should be managed. Our study demonstrated remarkable concordance between practicing pathologists and residents as to what constitutes professionalism and how to manage unprofessional behavior. Our case-based approach can be a useful technique to teach professionalism to both pathologists in practice and in training

Hole tunneling times in GaAs/AlAs double-barrier structures

We have calculated hole tunneling times in GaAs/AlAs double-barrier structures taking quantum well band-mixing effects into account. Our results indicate that for sufficiently high hole temperatures and concentrations, band-mixing effects reduce average hole tunneling times from the pure heavy hole value to values comparable to electron tunneling times in the same structure. For very low hole temperatures and concentrations, band mixing is less important and average hole tunneling times should approach the pure heavy hole value. These results provide an explanation for previously reported experimental results in which electrons and holes were found to be characterized by very similar tunneling times

Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE

The surface morphology of GaN is observed by atomic force microscopy for growth on GaN and AlN buffer layers and as a function of III/V flux ratio. Films are grown on sapphire substrates by molecular beam epitaxy using a radio frequency nitrogen plasma source. Growth using GaN buffer layers leads to N-polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Ga-rich as possible, although Ga droplets tend to form. Ga-polar films can be grown on AlN buffer layers, with the surface morphology determined by the conditions of buffer layer deposition as well as the III/V ratio for growth of the GaN layer. Near-stoichiometric buffer layer growth conditions appear to support the flattest surfaces in this case. Three defect types are typically observed in GaN films on AlN buffers, including large and small pits and "loop" defects. It is possible to produce surfaces free from large pit defects by growing thicker films under more Ga-rich conditions. In such cases the surface roughness can be reduced to less than 1 nm RMS

Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy

We have studied molecular beam epitaxy grown GaN films of both polarities using electric force microscopy to detect sub 1 µm regions of charge density variations associated with GaN extended defects. The large piezoelectric coefficients of GaN together with strain introduced by crystalline imperfections produce variations in piezoelectrically induced electric fields around these defects. The consequent spatial rearrangement of charges can be detected by electrostatic force microscopy and was found to be on the order of the characteristic Debye length for GaN at our dopant concentration. The electric force microscope signal was also found to be a linear function of the contact potential between the metal coating on the tip and GaN. Electrostatic analysis yielded a surface state density of 9.4 ± 0.5 × 10^10 cm – 2 at an energy of 30 mV above the valence band indicating that the GaN surface is unpinned in this case

Electron diffusion length and lifetime in p-type GaN

We report on electron beam induced current and current–voltage (I–V) measurements on Schottky diodes on p-type doped GaN layers grown by metal organic chemical vapor deposition. A Schottky barrier height of 0.9 eV was measured for the Ti/Au Schottky contact from the I–V data. A minority carrier diffusion length for electrons of (0.2 ± 0.05) µm was measured for the first time in GaN. This diffusion length corresponds to an electron lifetime of approximately 0.1 ns. We attempted to correlate the measured electron diffusion length and lifetime with several possible recombination mechanisms in GaN and establish connection with electronic and structural properties of GaN

Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain

We have studied molecular beam epitaxy grown GaN films using electric force microscopy to detect sub-1 µm regions of electric field gradient and surface potential variations associated with GaN extended defects. The large piezoelectric coefficients of GaN together with strain introduced by crystalline imperfections produce variation in piezoelectrically induced electric fields around these defects. The consequent spatial rearrangement of charges can be detected by electrostatic force microscopy, and can be additionally modified by externally applied strain and illumination. The electron force microscopy signal was found to be a function of the applied tip bias, showed reversal under externally applied strain, and was sensitive to above band gap illumination

Two-band modeling of narrow band gap and interband tunneling devices

A two-band transfer matrix method has been developed to study tunneling currents in narrow gap and interband tunnel structures. This relatively simple model gives good agreement with recently reported experimental results for InAs/AlSb/InAs/AlSb/InAs double-barrier heterostructures and InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling devices, and should be useful in the design of new interband tunneling devices

Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy

Using electron beam evaporation, a Si/CeO2/Si(111) structure has been grown in a molecular beam epitaxy machine. In situ low energy electron diffraction, cross sectional transmission electron microscopy, selected area diffraction, and atomic force microscopy have been used to structurally characterize the overlying silicon layer and show it to be single crystalline and epitaxially oriented. Rutherford backscattering and energy dispersive x-ray analysis have been used to confirm the presence of a continuous 23 Å CeO2 layer at the interface. Rutherford backscattering and x-ray photoemission spectroscopy show an additional presence of cerium both at the exposed silicon surface and incorporated in low levels (~ 1%) within the silicon film, suggesting a growth mechanism with cerium riding atop the silicon growth front leaving behind small amounts of cerium incorporated in the growing silicon crystal