Structural perfection in poorly lattice matched heterostructures

Continuum elastic theory is applied to the formation of misfit dislocations and point defects in strained layer structures. Explicit calculations of the energies of misfit dislocations in the double‐ and single‐kink geometries yield line tensions below which strained films are stable with respect to defect formation. Our results yield a mismatch‐dependent stability limit which, in the double kink case, differs from the Matthews–Blakeslee model by a geometrical factor and by the addition of a stress term associated with climb of the misfit dislocation. While our calculations yield equilibrium stability limits which may not correspond to observed critical thicknesses, the calculated stresses may be applied to descriptions of the kinetics of strain relief in films grown beyond these limits. Last, calculations of strain‐related contributions to the free energy of formation of point defects suggest a contribution │ΔG_(strain)│ ≃0.25 eV for a 5% lattice mismatch. This suggests a means of suppressing or enhancing the formation of vacancies or interstitials in semiconductors favoring these defects

Deformational sequence of a portion of the Michipicoten greenstone belt, Chabanel Township, Ontario

Detailed mapping at a scale of one inch = 400 feet is being carried out within a fume kill, having excellent exposure, located in the southwestern portion of the Michipicoten Greenstone Belt near Wawa, Ontario. The rocks are metasediments and metavolcanics of lower greenschist facies. U-Pb geochronology indicates that they are at least 2698 + or - 11 Ma old. The lithologic packages strike northeast to northwest, but the dominant strike is approximately east-west. Sedimentary structures and graded bedding are well preserved, aiding in the structural interpretation of this multiply deformed area. At least six phases of deformation within a relatively small area of the Michipicoten Greenstone Belt have been tentatively identified. These include the following structural features in approximate order of occurrence: (0) soft-sediment structures; (1) regionally overturned rocks, flattened pebbles, bedding parallel cleavage, and early, approximately bedding parallel faults; (2) northwest to north striking cleavage; (3) northeast striking cleavage and associated folds, and at least some late movement on approximately bedding parallel faults; (4) north-northwest and northeast trending faults; and (5) diabase dikes and associated fracture cleavages. Minor displacement of the diabase dikes occurs on faults that appear to be reactivated older structures

Preliminary structural model for the southwestern part of the Michipicoten greenstone belt, Ontario

The southwestern part of the Michipicoten Greenstone Belt includes a 100 sq km fume kill extending northeastwards from the twon of Wawa, Ontario. Except for a strip along the Magpie River that is covered by Pleistocene gravels, outcrop in the fume kill averages about 30-50%. Within this area are all the major lithologic belts characteristic of the southwestern fourth of the Michipicoten Greenstone Belt. All of the area mapped to date lies within Chabenel Township, recently mapped at 4" = 1 mile. Following a brief reconnaissance in 1983, mapping at a scale of 1" = 400' was begun within and adjacent to the fume kill in 1984. Two objectives are sought (1) determinaion of the geometry and sequence of folding, faulting, cleavage development, and intrusion; and (2) defining and tracing lithologic packages, and evaluating the nature of the contacts between these packages. Results for objective (1) are discussed in a companion abstract; this abstract will present tentative results for objective

New negative differential resistance device based on resonant interband tunneling

We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band, giving rise to a peak in the current-voltage characteristic. This heterostructure design virtually eliminates many of the competing transport mechanisms which limit the performance of conventional double-barrier structures. Peak-to-valley current ratios as high as 20 and 88 are observed at room temperature and liquid-nitrogen temperature, respectively. These are the highest values reported for any tunnel structure

Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures

We report improved peak-to-valley current ratios and peak current densities in InAs/AlSb double-barrier, negative differential resistance tunnel structures. Our peak-to-valley current ratios are 2.9 at room temperature and 10 at liquid-nitrogen temperatures. Furthermore, we have observed peak current densities of 1.7×10^5 A/cm^2. These figures of merit are substantially better than previously reported values. The improvements are obtained by adding spacer layers near the barriers, thinner well regions, and thinner barriers

Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures

We report large peak-to-valley current ratios in InAs/AlxGa1−xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is substantially larger than what has been previously reported, was observed in a 200-Å-thick Al0.42Ga0.58Sb barrier. A comparison with a calculated current-voltage curve yields good agreement in terms of peak current and the slope of the NDR region. The single-barrier structure is a candidate for high-speed devices because of expected short tunneling times and a wide NDR region

Reflection high-energy electron diffraction studies of the growth of lnAs/Ga_(1-x)In_xSb strained-layer superlattices

We have used reflection high‐energy electron diffraction to study the surface periodicity of the growth front of InAs/GaInSb strained‐layer superlattices (SLSs). We found that the apparent surface lattice spacing reproducibly changed during layers which subsequent x‐ray measurements indicated were coherently strained. Abrupt changes in the measured streak spacings were found to be correlated to changes in the growth flux. The profile of the dynamic streak spacing was found to be reproducible when comparing consecutive periods of a SLSs or different SLSs employing the same shuttering scheme at the InAs/GaInSb interface. Finally, when the interface shuttering scheme was changed, it was found that the dynamic streak separation profile also changed. Large changes in the shuttering scheme led to dramatic differences in the streak separation profile, and small changes in the shuttering scheme led to minor changes in the profile. In both cases, the differences in the surface periodicity profile occurred during the parts of the growth where the incident fluxes differed

Type II superlattices for infrared detectors and devices

Superlattices consisting of combinations of III-V semiconductors with type II band alignments are of interest for infrared applications because their energy gaps can be made smaller than those of any 'natural' III-V compounds. Specifically, it has been demonstrated that both InSb/InAsxSb1-x superlattices and Ga1-xInxSb/InAs superlattices can possess energy gaps in the 8-14 mu m range. The efforts have focused on the Ga1-xInxSb/InAs system because of its extreme broken gap band alignment, which results in narrow energy gaps for very short superlattice periods. The authors report the use of in situ chemical doping of Ga1-xInxSb/InAs superlattices to fabricate p-n photodiodes. These diodes display a clear photovoltaic response with a threshold near 12 mu m. They have also attained outstanding structural quality in Ga1-xInxSb/InAs superlattices grown on radiatively heated GaSb substrates. Cross-sectional transmission electron microscope images of these superlattices display no dislocations, while high resolution X-ray diffraction scans reveal sharp high-order superlattice satellites and strong Pendellosung fringes