Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment

The exact nature of the signal in scanning apertureless microscopy techniques is the subject of much debate. We have sought to resolve this controversy by carrying out simulations and experiments on the same structures. Simulations of a model of tip–sample coupling are shown to exhibit features that are in agreement with experimental observations at dimensions below the diffraction limit. The simulation of the optical imaging process is carried out using atomic force microscope data as a topographical template and a tip–sample dipole coupling model as the source of optical signal. The simulations show a number of key fingerprints including a dependence on the polarization of the external laser source, the size of the tip, and index of refraction of the sample being imaged. The experimental results are found to be in agreement with many of the features of the simulations. We conclude that the results of the dipole coupling theory agree qualitatively with experimental data and that apertureless microscopy measures optical properties, not just topography

Macroalgae contribute to the diet of Patella vulgata from contrasting conditions of latitude and wave exposure in the UK

Analysis of gut contents and stable isotope composition of intertidal limpets (Patella vulgata) showed a major contribution of macroalgae to their diet, along with microalgae and invertebrates. Specimens were collected in areas with limited access to attached macroalgae, suggesting a major dietary component of drift algae. Gut contents of 480 animals from 2 moderately wave exposed and 2 sheltered rocky shores in each of 2 regions: western Scotland (55–56°N) and southwest England (50°N), were analysed in 2 years (n = 30 per site per year). The abundance of microalgae, macroalgae and invertebrates within the guts was quantified using categorical abundance scales. Gut content composition was compared among regions and wave exposure conditions, showing that the diet of P. vulgata changes with both wave exposure and latitude. Microalgae were most abundant in limpet gut contents in animals from southwest sites, whilst leathery/corticated macroalgae were more prevalent and abundant in limpets from sheltered and northern sites. P. vulgata appears to have a more flexible diet than previously appreciated and these keystone grazers consume not only microalgae, but also large quantities of macroalgae and small invertebrates. To date, limpet grazing studies have focussed on their role in controlling recruitment of macroalgae by feeding on microscopic propagules and germlings. Consumption of adult algae suggests P. vulgata may also directly control the biomass of attached macroalgae on the shore, whilst consumption of drift algae indicates the species may play important roles in coupling subtidal and intertidal production

Microscopic processes during electron cyclotron resonance microwave nitrogen plasma-assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modeling

A set of delta-GaNyAs1–y/GaAs strained-layer superlattices grown on GaAs (001) substrates by electron cyclotron resonance (ECR) microwave plasma-assisted molecular beam epitaxy (MBE) was characterized by ex situ high resolution X-ray diffraction (HRXRD) to determine nitrogen content y in the nitrided GaAs monolayers as a function of growth temperature T. A first order kinetic model is introduced to quantitatively explain this y(T) dependence in terms of an energetically favorable N for As anion exchange and thermally activated N-surface desorption and surface segregation processes. The nitrogen surface segregation process, with an estimated activation energy Es ~ 0.9 eV appears to be significant during the GaAs overgrowth of GaNyAs1–y layers, and is shown to be responsible for strong y(T) dependence

n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design

The only II‐VI/II‐VI wide band‐gap heterojunction to provide both good lattice match and p‐ and n‐type dopability is CdSe/ZnTe. We have carried out numerical simulations of several light emitter designs incorporating CdSe, ZnTe, and Mg alloys. In the simulations, Poisson’s equation is solved in conjunction with the hole and electron current and continuity equations. Radiative and nonradiative recombination in bulk material and at interfaces are included in the model. Simulation results show that an n‐CdSe/p‐ZnTe heterostructure is unfavorable for efficient wide band‐gap light emission due to recombination in the CdSe and at the CdSe/ZnTe interface. An n‐CdSe/Mg_(x)Cd_(1−x)Se/p‐ZnTe heterostructure significantly reduces interfacial recombination and facilitates electron injection into the p‐ZnTe layer. The addition of a Mg_(y)Zn_(1−y)Te electron confining layer further improves the efficiency of light emission. Finally, an n‐CdSe/Mg_(x)Cd_(1−x)Se/Mg_(y)Zn_(1−y)Te/p‐ZnTe design allows tunability of the wavelength of light emission from green into the blue wavelength regime

Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy

Using electron beam evaporation, a Si/CeO2/Si(111) structure has been grown in a molecular beam epitaxy machine. In situ low energy electron diffraction, cross sectional transmission electron microscopy, selected area diffraction, and atomic force microscopy have been used to structurally characterize the overlying silicon layer and show it to be single crystalline and epitaxially oriented. Rutherford backscattering and energy dispersive x-ray analysis have been used to confirm the presence of a continuous 23 Å CeO2 layer at the interface. Rutherford backscattering and x-ray photoemission spectroscopy show an additional presence of cerium both at the exposed silicon surface and incorporated in low levels (~ 1%) within the silicon film, suggesting a growth mechanism with cerium riding atop the silicon growth front leaving behind small amounts of cerium incorporated in the growing silicon crystal

Tunnel switch diode based on AlSb/GaSb heterojunctions

We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic "S" shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barrier and epilayer thickness than was predicted by the punch-through model. The results were correlated with drift diffusion simulations which have been modified to account for the presence of a tunneling contact

Two-band modeling of narrow band gap and interband tunneling devices

A two-band transfer matrix method has been developed to study tunneling currents in narrow gap and interband tunnel structures. This relatively simple model gives good agreement with recently reported experimental results for InAs/AlSb/InAs/AlSb/InAs double-barrier heterostructures and InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling devices, and should be useful in the design of new interband tunneling devices

X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds

We have used x-ray photoelectron spectroscopy to measure the valence-band offsets for the lattice matched MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te heterojunctions grown by molecular beam epitaxy. By measuring core level to valence-band maxima and core level to core level binding energy separations, we obtain values of 0.56+/-0.07 eV and 0.43+/-0.11 eV for the valence-band offsets of MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te, respectively. Both of these values deviate from the common anion rule, as may be expected given the unoccupied cation d orbitals in Mg. Application of our results to the design of current II-VI wide band-gap light emitters is discussed

To Act and Learn: A Bakhtinian Exploration of Action Learning

This paper considers the work of the Russian social philosopher and cultural theorist, Mikhail Mikhailovich Bakhtin as a source of understanding for those involved in action learning. Drawing upon data gathered over two years during the evaluation of 20 action learning sets in the north of England, we will seek to work with the ideas of Bakhtin to consider their value for those involved in action learning. We consider key Bakhtin features such as Making Meaning, Participative Thinking, Theoreticism and Presence, Others and Outsideness, Voices and Carnival to highlight how Bakhtin's can enhance our understanding of the nature of action and learning

Employment and Disability Policy: the role of the psychologist

Persons with minor or major disabilities represent a significant portion of the U.S. working-age population. Based on the 1993 Survey of Income and Program Participation (SIPP), approximately 30 million (19%) men and women 18 to 64 years of age report some type of physical or mental limitation. For approximately 55% of these individuals (about 10% of those 18 to 64), the limitations are severe