26.5 ps Time Resolution Using 50 {\mu}m Low Gain Avalanche Detectors Fabricated by Micron Semiconductor Ltd

Low Gain Avalanche Detectors (LGADs) are silicon semiconductor sensors with an implanted thin p-doped multiplication layer that is designed to provide low gain. Most importantly, LGADs are specifically engineered to provide excellent spatial and temporal resolution simultaneously. The technology shows promising prospects of fulfilling the 4D tracking requirements of future high energy physics experiments. Micron Semiconductor Ltd. has fabricated LGADs with an active thickness of 50 $\mu$m. The electrical and timing performance has been measured and compared with devices fabricated at IMB-CNM for reference. 50 $\mu$m thin LGADs by Micron Semiconductor Ltd. were measured to have a timing resolution in the region of 30 ps using a dedicated setup involving minimum ionising particles produced by Sr-90. Specifically, the best timing resolution of 26.5 ps was measured at a bias voltage of 200 V at -30{\deg}C

Probing the Thermal Deoxygenation of Graphene Oxide using High Resolution In Situ X-Ray based Spectroscopies

Despite the recent developments in Graphene Oxide due to its importance as a host precursor of Graphene, the detailed electronic structure and its evolution during the thermal reduction remain largely unknown, hindering its potential applications. We show that a combination of high resolution in situ X-ray photoemission and X-ray absorption spectroscopies offer a powerful approach to monitor the deoxygenation process and comprehensively evaluate the electronic structure of Graphene Oxide thin films at different stages of the thermal reduction process. It is established that the edge plane carboxyl groups are highly unstable, whereas carbonyl groups are more difficult to remove. The results consistently support the formation of phenol groups through reaction of basal plane epoxide groups with adjacent hydroxyl groups at moderate degrees of thermal activation (~400 {\deg}C). The phenol groups are predominant over carbonyl groups and survive even at a temperature of 1000 {\deg}C. For the first time a drastic increase in the density of states (DOS) near the Fermi level at 600 {\deg}C is observed, suggesting a progressive restoration of aromatic structure in the thermally reduced graphene oxideComment: Pagona Papakonstantinou as Corresponding author, E-mail: [email protected]