112 research outputs found
26.5 ps Time Resolution Using 50 {\mu}m Low Gain Avalanche Detectors Fabricated by Micron Semiconductor Ltd
Low Gain Avalanche Detectors (LGADs) are silicon semiconductor sensors with
an implanted thin p-doped multiplication layer that is designed to provide low
gain. Most importantly, LGADs are specifically engineered to provide excellent
spatial and temporal resolution simultaneously. The technology shows promising
prospects of fulfilling the 4D tracking requirements of future high energy
physics experiments. Micron Semiconductor Ltd. has fabricated LGADs with an
active thickness of 50 m. The electrical and timing performance has been
measured and compared with devices fabricated at IMB-CNM for reference. 50
m thin LGADs by Micron Semiconductor Ltd. were measured to have a timing
resolution in the region of 30 ps using a dedicated setup involving minimum
ionising particles produced by Sr-90. Specifically, the best timing resolution
of 26.5 ps was measured at a bias voltage of 200 V at -30{\deg}C
Probing the Thermal Deoxygenation of Graphene Oxide using High Resolution In Situ X-Ray based Spectroscopies
Despite the recent developments in Graphene Oxide due to its importance as a
host precursor of Graphene, the detailed electronic structure and its evolution
during the thermal reduction remain largely unknown, hindering its potential
applications. We show that a combination of high resolution in situ X-ray
photoemission and X-ray absorption spectroscopies offer a powerful approach to
monitor the deoxygenation process and comprehensively evaluate the electronic
structure of Graphene Oxide thin films at different stages of the thermal
reduction process. It is established that the edge plane carboxyl groups are
highly unstable, whereas carbonyl groups are more difficult to remove. The
results consistently support the formation of phenol groups through reaction of
basal plane epoxide groups with adjacent hydroxyl groups at moderate degrees of
thermal activation (~400 {\deg}C). The phenol groups are predominant over
carbonyl groups and survive even at a temperature of 1000 {\deg}C. For the
first time a drastic increase in the density of states (DOS) near the Fermi
level at 600 {\deg}C is observed, suggesting a progressive restoration of
aromatic structure in the thermally reduced graphene oxideComment: Pagona Papakonstantinou as Corresponding author, E-mail:
[email protected]
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