Electrical Nanoprobing of Semiconducting Carbon Nanotubes using an Atomic Force Microscope

We use an Atomic Force Microscope (AFM) tip to locally probe the electronic properties of semiconducting carbon nanotube transistors. A gold-coated AFM tip serves as a voltage or current probe in three-probe measurement setup. Using the tip as a movable current probe, we investigate the scaling of the device properties with channel length. Using the tip as a voltage probe, we study the properties of the contacts. We find that Au makes an excellent contact in the p-region, with no Schottky barrier. In the n-region large contact resistances were found which dominate the transport properties.Comment: 4 pages, 5 figure

Planar Heterostructure Graphene -- Narrow-Gap Semiconductor -- Graphene

We investigate a planar heterostructure composed of two graphene films separated by a narrow-gap semiconductor ribbon. We show that there is no the Klein paradox when the Dirac points of the Brillouin zone of graphene are in a band gap of a narrow-gap semiconductor. There is the energy range depending on an angle of incidence, in which the above-barrier damped solution exists. Therefore, this heterostructure is a "filter" transmitting particles in a certain range of angles of incidence upon a potential barrier. We discuss the possibility of an application of this heterostructure as a "switch".Comment: 9 pages, 2 figure

Giant Nonlocality near the Dirac Point in Graphene

Transport measurements have been a powerful tool for uncovering new electronic phenomena in graphene. We report nonlocal measurements performed in the Hall bar geometry with voltage probes far away from the classical path of charge flow. We observe a large nonlocal response near the Dirac point in fields as low as 0.1T, which persists up to room temperature. The nonlocality is consistent with the long-range flavor currents induced by lifting of spin/valley degeneracy. The effect is expected to contribute strongly to all magnetotransport phenomena near the neutrality point

Energetics of Quantum Antidot States in Quantum Hall Regime

We report experiments on the energy structure of antidot-bound states. By measuring resonant tunneling line widths as function of temperature, we determine the coupling to the remote global gate voltage and find that the effects of interelectron interaction dominate. Within a simple model, we also determine the energy spacing of the antidot bound states, self consistent edge electric field, and edge excitation drift velocity.Comment: 4 pages, RevTex, 5 Postscript figure

Stability of an Exciton bound to an Ionized Donor in Quantum Dots

Total energy, binding energy, recombination rate (of the electron hole pair) for an exciton (X) bound in a parabolic two dimensional quantum dot by a donor impurity located on the z axis at a distance d from the dot plane, are calculated by using the Hartree formalism with a recently developed numerical method (PMM) for the solution of the Schroedinger equation. As our analysis indicates there is a critical dot radius such that for radius less than the critical radius the complex is unstable and with an increase of the impurity distance this critical radius increases. Furthermore, there is a critical value of the mass ratio such that for mass ratio less than the critical value the complex is stable. The appearance of this stability condition depends both on the impurity distance and the dot radius, in a way that with an increase of the impurity distance we have an increase in the maximum dot radius where this stability condition appears. For dot radii greater than this maximum dot radius (for fixed impurity distance) the complex is always stable.Comment: 17 pages, 7 figures Applying a new numerical method which is based on the adiabatic stability of quantum mechanics, we study the stability of an exciton (X) bound in a parabolic two dimensional quantum dot by a donor impurity located on the z axis at a distance d from the dot plan

Analytic results for NN particles with 1/r21/r^2 interaction in two dimensions and an external magnetic field

The $2N$-dimensional quantum problem of $N$ particles (e.g. electrons) with interaction $\beta/r^2$ in a two-dimensional parabolic potential $\omega_0$ (e.g. quantum dot) and magnetic field $B$, reduces exactly to solving a $(2N-4)$-dimensional problem which is independent of $B$ and $\omega_0$. An exact, infinite set of relative mode excitations are obtained for any $N$. The $N=3$ problem reduces to that of a ficticious particle in a two-dimensional, non-linear potential of strength $\beta$, subject to a ficticious magnetic field $B_{\rm fic}\propto J$, the relative angular momentum.Comment: To appear in Physical Review Letters (in press). RevTeX file. Two figures available from [email protected] or [email protected]

Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors

We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by cobalt electrodes. Scanning gate microscopy reveals that the bulk response of these devices is similar to gold-contacted p-CNFETs, confirming that Schottky barrier formation at the contact interface determines accessibility of electron and hole transport regimes. The transfer characteristics and Coulomb Blockade (CB) spectroscopy in ambipolar devices show strongly enhanced gate coupling, most likely due to reduction of defect density at the silicon/silicon-dioxide interface during hydrogen anneal. The CB data in the ``on''-state indicates that these CNFETs are nearly ballistic conductors at high electrostatic doping. Due to their nanoscale capacitance, CNFETs are extremely sensitive to presence of individual charge around the channel. We demonstrate that this property can be harnessed to construct data storage elements that operate at the few-electron level.Comment: 6 pages text, 3 figures and 1 table of content graphic; available as NanoLetters ASAP article on the we

Magnetization of noncircular quantum dots

We calculate the magnetization of quantum dots deviating from circular symmetry for noninteracting electrons or electrons interacting according to the Hartree approximation. For few electrons the magnetization is found to depend on their number, and the shape of the dot. The magnetization is an ideal probe into the many-electron state of a quantum dot.Comment: 11 RevTeX pages with 6 included Postscript figure

Percolation-type description of the metal-insulator transition in two dimensions

A simple non-interacting-electron model, combining local quantum tunneling and global classical percolation (due to a finite dephasing time at low temperatures), is introduced to describe a metal-insulator transition in two dimensions. It is shown that many features of the experiments, such as the exponential dependence of the resistance on temperature on the metallic side, the linear dependence of the exponent on density, the $e^2/h$ scale of the critical resistance, the quenching of the metallic phase by a parallel magnetic field and the non-monotonic dependence of the critical density on a perpendicular magnetic field, can be naturally explained by the model.Comment: 4 pages, 4 figure

Spin effects in a confined 2DEG: Enhancement of the g-factor, spin-inversion states and their far-infrared absorption

We investigate several spin-related phenomena in a confined two-dimensional electron gas (2DEG) using the Hartree-Fock approximation for the mutual Coulomb interaction of the electrons. The exchange term of the interaction causes a large splitting of the spin levels whenever the chemical potential lies within a Landau band (LB). This splitting can be reinterpreted as an enhancement of an effective g-factor, g*. The increase of g* when a LB is half filled can be accompanied by a spontaneous formation of a static spin-inversion state (SIS) whose details depend on the system sision state (SIS) whose details depend on the system size. The coupling of the states of higher LB's into the lowest band by the Coulomb interaction of the 2DEG is essential for the SIS to occur. The far-infrared absorption of the system, relatively insensitive to the spin splitting, develops clear signs of the SIS.Comment: 7 figure