Materials and process development for the fabrication of far ultraviolet device-integrated filters for visible-blind Si sensors

In this work, we show that the direct integration of ultraviolet metal-dielectric filters with Si sensors can improve throughput over external filter approaches, and yield devices with UV quantum efficiencies greater than 50%, with rejection ratios of visible light greater than 10^3. In order to achieve these efficiencies, two-dimensional doping methods are used to increase the UV sensitivity of back-illuminated Si sensors. Integrated filters are then deposited by a combination of Al evaporation and atomic layer deposition of dielectric spacer layers. At far UV wavelengths these filters require the use of non-absorbing dielectrics, and we have pursued the development of new atomic layer deposition processes for metal fluorides materials of MgF_2, AlF_3 and LiF. The performance of the complete multilayer filters on Si photodiodes and CCD imaging sensors, and the design and fabrication challenges associated with this development are demonstrated. This includes the continued development of deep diffused silicon avalanche photodiodes designed to detect the fast 220 nm emission component of barium fluoride scintillation crystals, while optically rejecting a slower component at 300 nm

Advanced imaging capabilities by incorporating plasmonics and metamaterials in detectors

Ultraviolet detection is often required to be made in the presence of a strong background of solar radiation which needs to be suppressed, but materials limitations at these wavelengths can impact both filter and sensor performance. In this work, we explore the use of 1D photonic bandgap structures integrated directly onto a Si sensor that can operate with solar blindness. These filters take advantage of the improved admittance with silicon to significantly improve throughput over conventional stand-alone bandpass filter elements. At far ultraviolet wavelengths these filters require the use of non-absorbing dielectrics such as the metal fluoride materials of MgF_2, AlF_3 and LiF. The latest performance of these 1D multilayer filters on Si photodiodes and CCD imaging sensors is demonstrated. We have also extended these 1D structures to more complex multilayers guided by the design concepts of metamaterials and metatronics, and to 2D patterned plasmonic hole array filters fabricated in aluminum. The performance of sensors and test filter structures is presented with an emphasis on UV throughput

Advanced imaging capabilities by incorporating plasmonics and metamaterials in detectors

Ultraviolet detection is often required to be made in the presence of a strong background of solar radiation which needs to be suppressed, but materials limitations at these wavelengths can impact both filter and sensor performance. In this work, we explore the use of 1D photonic bandgap structures integrated directly onto a Si sensor that can operate with solar blindness. These filters take advantage of the improved admittance with silicon to significantly improve throughput over conventional stand-alone bandpass filter elements. At far ultraviolet wavelengths these filters require the use of non-absorbing dielectrics such as the metal fluoride materials of MgF_2, AlF_3 and LiF. The latest performance of these 1D multilayer filters on Si photodiodes and CCD imaging sensors is demonstrated. We have also extended these 1D structures to more complex multilayers guided by the design concepts of metamaterials and metatronics, and to 2D patterned plasmonic hole array filters fabricated in aluminum. The performance of sensors and test filter structures is presented with an emphasis on UV throughput

An APD for the Detection of the Fast Scintillation Component of BaF_2

Barium fluoride crystals are the baseline choice for the calorimeter of the Mu2e experiment at Fermilab. By utilizing the fast 220 nm scintillation component (0.9 ns decay time) and discriminating against the larger slow component at 300 nm (650 ns decay time), it is possible to build a radiation hard calorimeter with good energy and time resolution and high rate capability. This requires a solid state photosensor with high quantum efficiency at 220 nm, discrimination against the 300 nm component, and fast rise and decay times. Progress on the development of such a sensor will be discussed

A Study of Position-Sensitive Solid-State Photomultiplier Signal Properties

We present an analysis of the signal properties of a position-sensitive solid-state photomultiplier (PS-SSPM) that has an integrated resistive network for position sensing. Attractive features of PS-SSPMs are their large area and ability to resolve small scintillator crystals. However, the large area leads to a high detector capacitance, and in order to achieve high spatial resolution a large network resistor value is required. These inevitably create a low-pass filter that drastically slows what would be a fast micro-cell discharge pulse. Significant changes in the signal shape of the PS-SSPM cathode output as a function of position are observed, which result in a position-dependent time delay when using traditional time pick-off methods such as leading edge discrimination and constant fraction discrimination. The timing resolution and time delay, as a function of position, were characterized for two different PS-SSPM designs, a continuous 10 mm × 10 mm PS-SSPM and a tiled 2 × 2 array of 5 mm × 5 mm PS-SSPMs. After time delay correction, the block timing resolution, measured with a 6 × 6 array of 1.3 × 1.3 × 20 mm3 LSO crystals, was 8.6 ns and 8.5 ns, with the 10 mm PS-SSPM and 5 mm PS-SSPM respectively. The effect of crystal size on timing resolution was also studied, and contrary to expectation, a small improvement was measured when reducing the crystal size from 1.3 mm to 0.5 mm. Digital timing methods were studied and showed great promise for allowing accurate timing by implementation of a leading edge time pick-off. Position-dependent changes in signal shape on the anode side also are present, which complicates peak height data acquisition methods used for positioning. We studied the effect of trigger position on signal amplitude, flood histogram quality, and depth-of-interaction resolution in a dual-ended readout detector configuration. We conclude that detector timing and positioning can be significantly improved by implementation of digital timing methods and by accounting for changes in the shape of the signals from PS-SSPMs