1,015 research outputs found

    Observation of fast stochastic ion heating by drift waves

    Get PDF
    Anomalously fast ion heating has been observed in the Caltech Encore tokamak [Phys. Rev. Lett. 59, 1436 (1987)], with the use of laser-induced fluorescence. This heating was found to be independent of electron temperature, but was well correlated with the presence of large-amplitude drift-Alfvén waves. Evidence is presented that suggests that the heating is stochastic and occurs when the ion displacement due to polarization drift becomes comparable to the perpendicular wavelength, i.e., when k[perpendicular] (mik[perpendicular] phi0/qB^2)~1. Stochastic heating may also be the cause of the anomalously high ion temperatures observed in reversed-field pinches

    Temperature fluctuations and heat transport in the edge regions of a tokamak

    Get PDF
    Electron temperature fluctuations have been investigated in the edge region of the Caltech research tokamak [S. J. Zweben and R. W. Gould, Nucl. Fusion 25, 171 (1985)], and an upper limit to this fluctuation level was found at Te/Te <~ 15%. This measurement, together with previous measurements of density and electric and magnetic field fluctuations, allows a unique comparison of the heat transport resulting from three basic turbulent mechanisms: (1) heat flux from the particle flux resulting from microscopic density and electric field fluctuations; (2) thermal conduction resulting from microscopic temperature and electric field fluctuations; and (3) thermal conduction resulting from microscopic magnetic field fluctuations. The measurements indicate that, in the edge regions, the electron heat transport caused by the measured turbulence-induced particle flux is comparable to or greater than that caused by the thermal conduction associated with the electron temperature and electric field fluctuations, and is significantly greater than that resulting from the measured magnetic fluctuations. This electron heat loss caused by the plasma turbulence is found to be an important electron energy loss mechanism in the edge regions

    Anderson Transition in Disordered Graphene

    Full text link
    We use the regularized kernel polynomial method (RKPM) to numerically study the effect disorder on a single layer of graphene. This accurate numerical method enables us to study very large lattices with millions of sites, and hence is almost free of finite size errors. Within this approach, both weak and strong disorder regimes are handled on the same footing. We study the tight-binding model with on-site disorder, on the honeycomb lattice. We find that in the weak disorder regime, the Dirac fermions remain extended and their velocities decrease as the disorder strength is increased. However, if the disorder is strong enough, there will be a {\em mobility edge} separating {\em localized states around the Fermi point}, from the remaining extended states. This is in contrast to the scaling theory of localization which predicts that all states are localized in two-dimensions (2D).Comment: 4 page

    Philanthropy-Supported Journalism

    Get PDF
    There is a widespread perception that the market is failing to ensure the provision of high quality, impactful journalism, especially investigative work and in‐depth coverage of governmental and international affairs. One answer to that market failing has been the development of philanthropy‐supported journalism. Some writers see this as a potentially important, if partial, solution to journalism\u27s problems, strengthening the editorial focus on creating social and policy impacts. Others have expressed concern that philanthropic support draws journalists toward elite orientations, with both funders themselves and their desired audiences representing the socioeconomic upper tiers

    Atomic Scale Memory at a Silicon Surface

    Get PDF
    The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of 5 atom rows. The writing process involves removal of Si atoms with the tip of a scanning tunneling microscope. The memory can be reformatted by controlled deposition of silicon. The constraints on speed and reliability are compared with data storage in magnetic hard disks and DNA.Comment: 13 pages, 5 figures, accepted by Nanotechnolog

    Ultracold Neutron Production in a Pulsed Neutron Beam Line

    Full text link
    We present the results of an Ultracold neutron (UCN) production experiment in a pulsed neutron beam line at the Los Alamos Neutron Scattering Center. The experimental apparatus allows for a comprehensive set of measurements of UCN production as a function of target temperature, incident neutron energy, target volume, and applied magnetic field. However, the low counting statistics of the UCN signal expected can be overwhelmed by the large background associated with the scattering of the primary cold neutron flux that is required for UCN production. We have developed a background subtraction technique that takes advantage of the very different time-of-flight profiles between the UCN and the cold neutrons, in the pulsed beam. Using the unique timing structure, we can reliably extract the UCN signal. Solid ortho-D2_2 is used to calibrate UCN transmission through the apparatus, which is designed primarily for studies of UCN production in solid O2_2. In addition to setting the overall detection efficiency in the apparatus, UCN production data using solid D2_2 suggest that the UCN upscattering cross-section is smaller than previous estimates, indicating the deficiency of the incoherent approximation widely used to estimate inelastic cross-sections in the thermal and cold regimes
    corecore